公开(公告)号：US20170047290A1

公开(公告)日：2017-02-16

申请号：US14824181

申请日：2015-08-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sunil Kumar SINGH ,  Ravi Prakash SRIVASTAVA ,  Nicholas Robert STOKES

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/2885 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76895 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53266 ,  H01L23/535

Abstract: Metal filling processes for semiconductor devices and methods of fabricating semiconductor devices. One method includes, for instance: obtaining a wafer with at least one contact opening; depositing a metal alloy into at least a portion of the at least one contact opening; separating the metal alloy into a first metal layer and a second metal layer; depositing a barrier stack over the wafer; forming at least one trench opening; forming at least one via opening; and depositing at least one metal material into the trench openings and via openings. An intermediate semiconductor device is also disclosed.

Abstract translation: 用于半导体器件的金属填充工艺和制造半导体器件的方法。 一种方法包括例如：获得具有至少一个接触开口的晶片; 将金属合金沉积到所述至少一个接触开口的至少一部分中; 将金属合金分离成第一金属层和第二金属层; 在晶片上沉积势垒堆叠; 形成至少一个沟槽开口; 形成至少一个通孔; 以及将至少一种金属材料沉积到沟槽开口和通孔中。 还公开了一种中间半导体器件。

公开(公告)号：US20170186688A1

公开(公告)日：2017-06-29

申请号：US15460976

申请日：2017-03-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sunil Kumar SINGH ,  Ravi Prakash SRIVASTAVA ,  Nicholas Robert STOKES

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L21/288 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L23/532 ,  H01L21/321

CPC classification number: H01L23/5226 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/2885 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76895 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53266 ,  H01L23/535

Abstract: Metal filling processes for semiconductor devices and methods of fabricating semiconductor devices. One method includes, for instance: obtaining a wafer with at least one contact opening; depositing a metal alloy into at least a portion of the at least one contact opening; separating the metal alloy into a first metal layer and a second metal layer; depositing a barrier stack over the wafer; forming at least one trench opening; forming at least one via opening; and depositing at least one metal material into the trench openings and via openings. An intermediate semiconductor device is also disclosed.