公开(公告)号：US20160104707A1

公开(公告)日：2016-04-14

申请号：US14513725

申请日：2014-10-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Balaji Kannan ,  Unoh Kwon ,  Rekha Rajaram

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/49 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L21/225

CPC classification number: H01L27/0922 ,  H01L21/02192 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/517

Abstract: Embodiments of the present invention provide CMOS structures and methods of gate formation that combine a keep-cap scheme in which a protective layer is maintained on a PFET during a replacement metal gate process that utilizes an NFET-first process flow. Selective nitridation is used to provide nitrogen to the NFET while the PFET is protected from nitrogen by the keep-cap. Additional dopants are provided to the NFET using a gate stack dopant material (GSDM) layer.

Abstract translation: 本发明的实施例提供了CMOS结构和栅极形成方法，其组合了在利用NFET第一工艺流程的替换金属栅极工艺期间在PFET上保持保护层的保持帽方案。 选择性氮化用于向NFET提供氮气，同时PFET通过保护盖被氮保护。 使用栅极堆叠掺杂剂材料（GSDM）层向NFET提供附加的掺杂剂。

公开(公告)号：US20160086860A1

公开(公告)日：2016-03-24

申请号：US14495170

申请日：2014-09-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji Kannan ,  Rekha Rajaram ,  Unoh Kwon

IPC: H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: A method of fabricating advanced multi-threshold field effect transistors using a replacement metal gate process. A first method includes thinning layers composed of multilayer film stacks and incorporating a portion of the remaining thinned film in some transistors. A second method includes patterning dopant materials for a high-k dielectric by using thinning layers composed of multilayer thin film stacks, or in other embodiments, by a single thinning layer.

Abstract translation: 使用替代金属栅极工艺制造先进的多阈值场效应晶体管的方法。 第一种方法包括由多层膜叠层组成的薄化层，并将一部分剩余的薄膜结合在一些晶体管中。 第二种方法包括通过使用由多层薄膜叠层组成的薄化层，或在其它实施例中，通过单个变薄层来图案化用于高k电介质的掺杂剂材料。

公开(公告)号：US10170373B2

公开(公告)日：2019-01-01

申请号：US14495170

申请日：2014-09-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji Kannan ,  Rekha Rajaram ,  Unoh Kwon

IPC: H01L21/8238

Abstract: A method of fabricating advanced multi-threshold field effect transistors using a replacement metal gate process. A first method includes thinning layers composed of multilayer film stacks and incorporating a portion of the remaining thinned film in some transistors. A second method includes patterning dopant materials for a high-k dielectric by using thinning layers composed of multilayer thin film stacks, or in other embodiments, by a single thinning layer.

公开(公告)号：US09418995B2

公开(公告)日：2016-08-16

申请号：US14513725

申请日：2014-10-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Balaji Kannan ,  Unoh Kwon ,  Rekha Rajaram

IPC: H01L29/49 ,  H01L27/092 ,  H01L29/51 ,  H01L21/8238 ,  H01L21/225 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L27/0922 ,  H01L21/02192 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/517

Abstract: Embodiments of the present invention provide CMOS structures and methods of gate formation that combine a keep-cap scheme in which a protective layer is maintained on a PFET during a replacement metal gate process that utilizes an NFET-first process flow. Selective nitridation is used to provide nitrogen to the NFET while the PFET is protected from nitrogen by the keep-cap. Additional dopants are provided to the NFET using a gate stack dopant material (GSDM) layer.

Abstract translation: 本发明的实施例提供了CMOS结构和栅极形成方法，其组合了在利用NFET第一工艺流程的替换金属栅极工艺期间在PFET上保持保护层的保持帽方案。 选择性氮化用于向NFET提供氮气，同时PFET通过保护盖被氮保护。 使用栅极堆叠掺杂剂材料（GSDM）层向NFET提供附加的掺杂剂。

公开(公告)号：US09343372B1

公开(公告)日：2016-05-17

申请号：US14583835

申请日：2014-12-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruqiang Bao ,  Unoh Kwon ,  Rekha Rajaram ,  Keith Kwong Hon Wong

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/51 ,  H01L21/3213 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/4966 ,  H01L21/32134 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66606

Abstract: A method includes forming an n-FET device and a p-FET device on a substrate, each of the n-FET device and the p-FET device include a metal gate stack consisting of a titanium-aluminum carbide (TiAlC) layer above and in direct contact with a titanium nitride (TiN) cap, and removing, from the p-FET device, the TiAlC layer selective to the TiN cap. The removal of the TiAlC layer includes using a selective TiAlC to TiN wet etch chemistry solution with a substantially high TiAlC to TiN etch ratio such that the TiN cap remains in the p-FET device.

Abstract translation: 一种方法包括在衬底上形成n-FET器件和p-FET器件，n-FET器件和p-FET器件中的每一个包括由上述钛 - 碳化铝（TiAlC）层和 与氮化钛（TiN）帽直接接触，并且从p-FET器件去除对TiN帽有选择性的TiAlC层。 去除TiAlC层包括使用具有基本上高的TiAlC至TiN蚀刻比的选择性TiAlC至TiN湿蚀刻化学溶液，使得TiN帽保留在p-FET器件中。