公开(公告)号：US09184263B2

公开(公告)日：2015-11-10

申请号：US14143468

申请日：2013-12-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiuyu Cai ,  Ajey Poovannummoottil Jacob ,  Daniel T. Pham ,  Mark V. Raymond ,  Christopher M. Prindle ,  Catherine B. Labelle ,  Linus Jang ,  Robert Teagle

IPC: H01L21/3205 ,  H01L29/66 ,  H01L21/3105 ,  H01L29/06 ,  H01L29/417 ,  H01L29/51 ,  H01L29/423 ,  H01L21/768 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L21/31055 ,  H01L21/76897 ,  H01L29/0692 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/42364 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/7851

Abstract: One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrificial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the sidewall spacers, removing the sacrificial gate structure to define a replacement gate cavity positioned between the sidewall spacers, forming a replacement gate structure in the replacement gate cavity, forming a tensile-stressed gate cap layer above the replacement gate structure and within the replacement gate cavity and, after forming the tensile-stressed gate cap layer, removing the tensile-stressed layer of insulating material.

Abstract translation: 本文公开的一种方法尤其包括邻近牺牲栅极结构的牺牲栅电极的相对侧的侧壁间隔壁，形成邻近侧壁间隔物的绝缘材料的拉应力层，去除牺牲栅极结构以限定替换 门腔定位在侧壁间隔件之间，在置换栅腔中形成替换栅极结构，在置换栅极结构之上和置换栅极腔内形成拉伸应力栅极盖层，并且在形成拉伸应力栅极盖层之后， 去除绝缘材料的拉应力层。

公开(公告)号：US20150187905A1

公开(公告)日：2015-07-02

申请号：US14143468

申请日：2013-12-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiuyu Cai ,  Ajey Poovannummoottil Jacob ,  Daniel T. Pham ,  Mark V. Raymond ,  Christopher M. Prindle ,  Catherine B. Labelle ,  Linus Jang ,  Robert Teagle

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/51 ,  H01L29/423 ,  H01L21/768 ,  H01L21/3105 ,  H01L29/417

CPC classification number: H01L29/6681 ,  H01L21/31055 ,  H01L21/76897 ,  H01L29/0692 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/42364 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/7851

Abstract: One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrificial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the sidewall spacers, removing the sacrificial gate structure to define a replacement gate cavity positioned between the sidewall spacers, forming a replacement gate structure in the replacement gate cavity, forming a tensile-stressed gate cap layer above the replacement gate structure and within the replacement gate cavity and, after forming the tensile-stressed gate cap layer, removing the tensile-stressed layer of insulating material.

Abstract translation: 本文公开的一种方法尤其包括邻近牺牲栅极结构的牺牲栅电极的相对侧的侧壁间隔壁，形成邻近侧壁间隔物的绝缘材料的拉应力层，去除牺牲栅极结构以限定替换 门腔定位在侧壁间隔件之间，在置换栅腔中形成替换栅极结构，在置换栅极结构之上和置换栅极腔内形成拉伸应力栅极盖层，并且在形成拉伸应力栅极盖层之后， 去除绝缘材料的拉应力层。