公开(公告)号：US20240006491A1

公开(公告)日：2024-01-04

申请号：US17852966

申请日：2022-06-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Qizhi LIU ,  Yves T. NGU ,  Ajay RAMAN ,  Rajendran KRISHNASAMY ,  Alvin J. JOSEPH

IPC: H01L29/10 ,  H01L29/08

CPC classification number: H01L29/1095 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a stepped emitter and methods of manufacture. The structure includes: a collector; a base over the collector; and an emitter over the base, the emitter comprising at least one stepped feature over the base.

公开(公告)号：US20240250157A1

公开(公告)日：2024-07-25

申请号：US18099366

申请日：2023-01-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Yves T. NGU ,  Johnatan A. KANTAROVSKY ,  Sebastian T. VENTRONE

IPC: H01L29/73 ,  H01L23/34 ,  H01L27/07 ,  H01L29/06 ,  H01L29/08 ,  H01L29/737

CPC classification number: H01L29/7302 ,  H01L23/345 ,  H01L27/075 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heater terminal contacts, methods of operation and methods of manufacture. The structure includes: a heterojunction bipolar transistor having a collector, sub-collector region, emitter and base region; and heater terminal contacts electrically coupled to the sub-collector region.

公开(公告)号：US20240249992A1

公开(公告)日：2024-07-25

申请号：US18099389

申请日：2023-01-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Yves T. NGU ,  Johnatan A. KANTAROVSKY ,  Sebastian T. VENTRONE

IPC: H01L23/34 ,  H01L29/737

CPC classification number: H01L23/345 ,  H01L29/7371

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heater elements, methods of operation and methods of manufacture. The structure includes: an active device; a heater element under the active device and within a semiconductor substrate; and a contact to the heater element and the active device.

公开(公告)号：US20240186441A1

公开(公告)日：2024-06-06

申请号：US18075908

申请日：2022-12-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander M. DERRICKSON ,  Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Yusheng BIAN ,  Judson R. HOLT

IPC: H01L31/11 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/1105 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1808

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.

公开(公告)号：US20230317627A1

公开(公告)日：2023-10-05

申请号：US17707273

申请日：2022-03-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Siva P. ADUSUMILLI ,  Yves T. NGU ,  Johnatan A. KANTAROVSKY ,  Sebastian T. VENTRONE

IPC: H01L23/552 ,  H01L29/737 ,  H01L29/06 ,  H01L21/764

CPC classification number: H01L23/552 ,  H01L29/7371 ,  H01L29/0649 ,  H01L21/764

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with airgap structures and methods of manufacture. The structure includes: a semiconductor substrate with a trap-rich region; one or more airgap structures within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the one or more airgap structures and extending into the semiconductor substrate; and a device over the one or more airgap structures.