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    THERMAL MANAGEMENT FOR HYBRID LASERS
    1.
    发明申请
    THERMAL MANAGEMENT FOR HYBRID LASERS 有权

    公开(公告)号：US20220077656A1

    公开(公告)日：2022-03-10

    申请号：US17015001

    申请日：2020-09-08

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： DI LIANG ,  CHIH C. SHIH ,  KEVIN B. LEIGH ,  GEZA KURCZVEIL ,  MARCO FIORENTINO

    IPC: H01S5/183 ,  H01S5/024 ,  H01S5/10

    Abstract: Techniques and systems for a semiconductor laser, namely a grating-coupled surface-emitting (GCSE) comb laser, having thermal management for facilitating dissipation of heat, integrated thereon. The thermal management is structured in manner that prevents deformation or damage to the GCSE laser chips included in the semiconductor laser implementation. The disclosed thermal management elements integrated in the laser can include: heat sinks; support bars; solder joints; thermal interface material (TIM); silicon vias (TSV); and terminal conductive sheets. Support bars, for example, having the GCSE laser chip positioned between the bars and having a height that is higher than a thickness of the GCSE laser chip. Accordingly, the heat sink can be placed on top of the support bars such that heat is dissipated from the GCSE laser chip, and the heat sink is separated from directed contact with the GCSE laser chip due to the height of the support bars.

    MICRO-RING LASER BANDWIDTH ENHANCEMENT WITH MICRO-RING RESONATOR
    2.
    发明公开
    MICRO-RING LASER BANDWIDTH ENHANCEMENT WITH MICRO-RING RESONATOR 审中-公开

    公开(公告)号：US20240039244A1

    公开(公告)日：2024-02-01

    申请号：US17875367

    申请日：2022-07-27

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： STANLEY CHEUNG ,  DI LIANG ,  RAYMOND G. BEAUSOLEIL ,  MICHAEL RENNE TY TAN ,  WAYNE VICTOR SORIN

    IPC: H01S5/14 ,  H01S5/026 ,  H01S5/10

    CPC classification number: H01S5/142 ,  H01S5/0265 ,  H01S5/1071

    Abstract: Implementations disclosed herein provide semiconductor resonator based optical multiplexers that achieve enhanced bandwidth range of light emitted therefrom. The present disclosure integrates silicon devices into resonator structures, such as micro-ring resonators, that couples a side mode with a lasing mode and resonantly amplifies coupled light to output light having an enhanced bandwidth with respect to the lasing mode. In some examples, the optical multiplexers disclosed herein include a bus waveguide; a first resonator structure optically coupled to the bus waveguide and comprising an optical amplification mechanism that generates light and a single mode filter to force the generated light into single-mode operation; and a second resonator structure optically coupled to the first resonator structure and comprising a phase-tuning mechanism. The phase-tuning mechanism can be controlled to detune phase of light in the second resonator relative to the light in the first resonator.

    TEMPERATURE INSENSITIVE OPTICAL RECEIVER
    3.
    发明申请
    TEMPERATURE INSENSITIVE OPTICAL RECEIVER 有权

    公开(公告)号：US20210391488A1

    公开(公告)日：2021-12-16

    申请号：US16902135

    申请日：2020-06-15

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： ZHIHONG HUANG ,  DI LIANG ,  YUAN YUAN

    IPC: H01L31/105 ,  H01L31/028 ,  H01L31/18 ,  H01L27/144 ,  H04B10/66

    Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

    ON-CHIP LASER NEURON INTEGRATED ON SILICON
    5.
    发明公开
    ON-CHIP LASER NEURON INTEGRATED ON SILICON 审中-公开

    公开(公告)号：US20240311627A1

    公开(公告)日：2024-09-19

    申请号：US18183781

    申请日：2023-03-14

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： BASSEM TOSSOUN ,  DI LIANG

    IPC: G06N3/067 ,  G06N3/048

    CPC classification number: G06N3/067 ,  G06N3/048

    Abstract: Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations. An example of the systems and methods disclosed herein includes operation of a nonlinear activation device using injection seeding to generate secondary optical signals based on injection locking using a seed signal and an optical power of the seed signal that exceeds a threshold. For example, the system and methods include adjusting a bias applied to an optical source comprising an optically active region positioned between Group III-V semiconductor material and receiving a first optical signal at a first wavelength that injection locks the optical source. The optical source emits a second optical signal at a second wavelength based on injection locking and generates one or more secondary optical signals based on: optical power of the first optical signal and the bias applied to the optical source.

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