公开(公告)号：US10079471B2

公开(公告)日：2018-09-18

申请号：US15205789

申请日：2016-07-08

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Xue Huang ,  Di Liang

IPC: H01S5/00 ,  H01S5/026 ,  H01L23/00 ,  H01S5/22 ,  H01S5/02

CPC classification number: H01S5/026 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/27452 ,  H01L2224/32145 ,  H01L2224/32505 ,  H01L2224/8301 ,  H01L2924/0533 ,  H01L2924/0534 ,  H01L2924/05341 ,  H01L2924/05342 ,  H01L2924/3641 ,  H01S5/021 ,  H01S5/1032 ,  H01S5/22

Abstract: An example device in accordance with an aspect of the present disclosure includes a first layer and a second layer to be bonded to the first layer. The first and second layers are materials that generate gas byproducts when bonded, and the first and/or second layers is/are compatible with photonic device operation based on a separation distance. At least one bonding interface layer is to establish the separation distance for photonic device operation, and is to prevent gas trapping and to facilitate bonding between the first layer and the second layer.

公开(公告)号：US20170317466A1

公开(公告)日：2017-11-02

申请号：US15141948

申请日：2016-04-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Xue Huang ,  Di Liang

IPC: H01S5/026 ,  H01S5/06 ,  H01L29/94 ,  H01L29/78 ,  H01L29/51 ,  H01S5/30 ,  H01L29/423

CPC classification number: H01L29/78 ,  H01L29/513 ,  H01L29/66181 ,  H01L29/94 ,  H01S5/0215 ,  H01S5/0614

Abstract: An example device in accordance with an aspect of the present disclosure includes at least one dielectric layer sandwiched between first and second layers, to provide a dielectric characteristic for the device. At least one interface layer, disposed between the at least one dielectric layer and at least one of i) the first layer, and ii) the second layer, is to serve as bond enhancement between the at least one dielectric layer and other layers.

公开(公告)号：US10586847B2

公开(公告)日：2020-03-10

申请号：US16065782

申请日：2016-01-15

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Xue Huang

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/20 ,  H01L21/306 ,  H01L27/07 ,  H01L29/786 ,  H01L29/66 ,  H01L29/20

Abstract: A multilayer device includes a substrate having a trench extending along a first surface of the substrate. A first layer disposed on the first surface of the substrate, the first layer comprising a given surface and another surface. A dielectric layer is formed between the given surface of the first layer and the first surface of the substrate. An active region disposed on the other surface of the first layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.