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    INTEGRATED CIRCUITS
    1.
    发明申请
    INTEGRATED CIRCUITS 审中-公开

    公开(公告)号：US20180012900A1

    公开(公告)日：2018-01-11

    申请号：US15541986

    申请日：2015-01-29

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： Wai Mun Wong ,  Leong Yap Chia ,  Ning Ge

    IPC: G11C16/04

    CPC classification number: H01L27/11521 ,  G11C16/0433 ,  H01L27/1156

    Abstract: The present subject matter relates to an integrated circuit comprising an erasable programmable read only memory (EPROM) array having a plurality of EPROM cells disposed in rows and columns, wherein one or more EPROM cells located at predetermined positions in the EPROM array are selectively dischargeable. The one or more EPROM cells comprise a EPROM transistor having a first conductive layer to store electrons upon the EPROM transistor being programmed and a control metal oxide semiconductor field-effect transistor (MOSFET) electrically connected to the first conductive layer to provide an electron leakage path to dissipate the electrons stored in the first conductive layer in a predetermined leak time period.

    Printhead assembly
    4.
    发明授权
    Printhead assembly 有权

    公开(公告)号：US10173420B2

    公开(公告)日：2019-01-08

    申请号：US15558618

    申请日：2015-07-30

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： Wai Mun Wong ,  Leong Yap Chia ,  Ning Ge

    IPC: B41J2/05 ,  B41J2/16 ,  B41J2/14

    Abstract: The present subject matter relates to a printhead assembly comprising a plurality of print nozzles in a nozzle array. Each of the plurality of print nozzles is coupled to a printhead firing resistor, the printhead firing resistor being individually addressable. A print control circuit is to actuate the printhead firing resistor. In accordance with one example implementation of the present subject matter, the print control circuit comprises pull-down resistors made of Tantalum-Aluminum (Ta—Al).

    Addressing an EPROM
    5.
    发明授权
    Addressing an EPROM 有权

    公开(公告)号：US10081178B2

    公开(公告)日：2018-09-25

    申请号：US15877971

    申请日：2018-01-23

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： Ning Ge ,  Leong Yap Chia ,  Wai Mun Wong

    IPC: G11C16/08 ,  B41J2/045 ,  G11C16/32

    CPC classification number: B41J2/04541 ,  B41J2/04543 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/04586 ,  G11C16/08 ,  G11C16/32

    Abstract: Addressing an EPROM on a printhead is described. In an example, a printhead includes an electronically programmable read-only memory (EPROM) having a plurality of cells arranged in rows and columns, each of the cells having a addressing port, a row select port, and a column select port. A conductor is coupled to the addressing portion of each of the plurality of cells. A column shift register is coupled to the column select ports of the plurality of cells, the column shift register having a register location for each column of the plurality of cells and having an input to receive a first input signal. A row shift register is coupled to row select ports of the plurality of cells, the row shift register having a register location for each row of the plurality of cells and having an input to receive a second input signal.

    Integrated circuits
    6.
    发明授权
    Integrated circuits 有权

    公开(公告)号：US10224335B2

    公开(公告)日：2019-03-05

    申请号：US15541986

    申请日：2015-01-29

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： Wai Mun Wong ,  Leong Yap Chia ,  Ning Ge

    IPC: H01L29/49 ,  H01L27/11521 ,  H01L27/1156 ,  G11C16/04

    Abstract: The present subject matter relates to an integrated circuit comprising an erasable programmable read only memory (EPROM) array having a plurality of EPROM cells disposed in rows and columns, wherein one or more EPROM cells located at predetermined positions in the EPROM array are selectively dischargeable. The one or more EPROM cells comprise a EPROM transistor having a first conductive layer to store electrons upon the EPROM transistor being programmed and a control metal oxide semiconductor field-effect transistor (MOSFET) electrically connected to the first conductive layer to provide an electron leakage path to dissipate the electrons stored in the first conductive layer in a predetermined leak time period.

    SENSING A PROPERTY OF A FLUID
    8.
    发明申请
    SENSING A PROPERTY OF A FLUID 审中-公开

    公开(公告)号：US20180009224A1

    公开(公告)日：2018-01-11

    申请号：US15547133

    申请日：2015-04-30

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： Ning GE ,  Zhiyong Li ,  Leong Yap Chia ,  Wai Mun Wong

    IPC: B41J2/14 ,  G01N27/414

    CPC classification number: B41J2/14153 ,  B41J2/125 ,  G01N27/414

    Abstract: In an example, a device for sensing a property of a fluid may include an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain. The device may also include a first metal element in contact with the gate and a switching layer in contact with the first metal layer. A resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer and is to be retained in the switching layer following removal of the electrical field. The device may also include a metal plate in contact with the switching layer, in which the metal plate is to directly contact the fluid for which the property is to be sensed.

    Sensing a property of a fluid
    10.
    发明授权
    Sensing a property of a fluid 有权

    公开(公告)号：US10071552B2

    公开(公告)日：2018-09-11

    申请号：US15547133

    申请日：2015-04-30

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

    Inventor： Ning Ge ,  Zhiyong Li ,  Leong Yap Chia ,  Wai Mun Wong

    IPC: B41J2/14 ,  G01N27/414

    CPC classification number: B41J2/14153 ,  B41J2/125 ,  G01N27/414

    Abstract: In an example, a device for sensing a property of a fluid may include an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain. The device may also include a first metal element in contact with the gate and a switching layer in contact with the first metal layer. A resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer and is to be retained in the switching layer following removal of the electrical field. The device may also include a metal plate in contact with the switching layer, in which the metal plate is to directly contact the fluid for which the property is to be sensed.

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