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公开(公告)号：US20160155611A1
公开(公告)日：2016-06-02
申请号：US14834389
申请日：2015-08-24
Applicant: Hitachi High-Technologies Corporation
Inventor： Akira KAGOSHIMA , Daisuke SHIRAISHI , Yuji NAGATANI
CPC classification number: C23C16/52 , C23C16/50 , H01J37/32908 , H01J37/32926 , H01J37/32935
Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.
Abstract translation: 应用了诸如APC的过程控制的等离子体处理装置包括：对样品进行等离子体处理的处理室; 以及等离子体处理控制装置，其进行控制以优化等离子体处理的状态，其基于从第二批次的等离子体处理的时间等待时间来恢复处理室内处于等离子体处理的状态，等待处理 在第一批之前很快就完成了第一批的等离子处理开始的时间，第二批的等离子体处理的内容。
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公开(公告)号：US20190100840A1
公开(公告)日：2019-04-04
申请号：US16207434
申请日：2018-12-03
Applicant: Hitachi High-Technologies Corporation
Inventor： Akira KAGOSHIMA , Daisuke SHIRAISHI , Yuji NAGATANI
Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.
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公开(公告)号：US20170230271A1
公开(公告)日：2017-08-10
申请号：US15248113
申请日：2016-08-26
Applicant: Hitachi High-Technologies Corporation
Inventor： Akira KAGOSHIMA , Daisuke SHIRAISHI , Yuji NAGATANI
CPC classification number: H04L43/14 , H04L41/0672 , H04L43/0817 , H04L67/10
Abstract: A data management apparatus according to an embodiment of the present invention includes a data analyzing unit that processes operation data transferred from a data collecting unit that collects the operation data of a semiconductor manufacturing apparatus, and a state monitoring unit that monitors a state of the data analyzing unit based on monitoring time. The monitoring time is the sum of first time that is time required for transferring the operation data to the data analyzing unit and second time that is time required for processing the operation data in the data analyzing unit.
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公开(公告)号：US20180068909A1
公开(公告)日：2018-03-08
申请号：US15437026
申请日：2017-02-20
Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
Inventor： Daisuke SHIRAISHI , Akira KAGOSHIMA , Yuji NAGATANI , Satomi INOUE
IPC: H01L21/66 , H01L21/67 , H01L21/311 , H01J37/32
CPC classification number: H01L22/26 , H01J37/32082 , H01J37/32935 , H01J37/32972 , H01J2237/334 , H01L21/31116 , H01L21/67069 , H01L21/67253
Abstract: A plasma processing apparatus including a processing chamber, a radio frequency power source, a monitoring unit, and a calculation unit is provided. In the processing chamber, etching target film is etched by using plasma. The radio frequency power source supplies radio frequency electric power. The monitoring unit monitors light emission of the plasma. The calculation unit estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching.
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