公开(公告)号：US20140183557A1

公开(公告)日：2014-07-03

申请号：US14092098

申请日：2013-11-27

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Su Bin KANG ,  Kyoung-Kook HONG ,  Jong Seok LEE ,  Youngkyun JUNG

IPC: H01L29/45 ,  H01L21/28 ,  H01L29/16

CPC classification number: H01L29/45 ,  H01L21/0485 ,  H01L29/1608

Abstract: A semiconductor device structure for an ohmic contact is provided, including a silicon carbide substrate and an ohmic contact layer disposed on the silicon carbide substrate. A carbon layer is disposed on the ohmic contact layer. An anti-diffusion layer is disposed on the carbon layer, and a pad layer is disposed on the anti-diffusion layer. The anti-diffusion layer is made of any one of tungsten (W), titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN).

Abstract translation: 提供了一种用于欧姆接触的半导体器件结构，包括碳化硅衬底和设置在碳化硅衬底上的欧姆接触层。 碳层设置在欧姆接触层上。 在碳层上设置防扩散层，在反扩散层上设置衬垫层。 抗扩散层由钨（W），钛（Ti），氮化钛（TiN），钽（Ta）和氮化钽（TaN）中的任一种制成。

公开(公告)号：US20240120269A1

公开(公告)日：2024-04-11

申请号：US18144637

申请日：2023-05-08

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： Kyoung Kook HONG ,  Su Bin KANG ,  Young Seok KIM

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/373

CPC classification number: H01L23/49861 ,  H01L21/4839 ,  H01L23/3735 ,  H01L24/40 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/73263

Abstract: A power module and a manufacturing method include semiconductor chips, an insulating circuit board including an insulating layer and a first metal layer disposed on a first surface of the insulating layer, and lead frames disposed between the semiconductor chips and the insulating circuit board.

公开(公告)号：US20160148900A1

公开(公告)日：2016-05-26

申请号：US14800607

申请日：2015-07-15

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Kyoung-Kook HONG ,  Hyun Woo NOH ,  Youngkyun JUNG ,  Dae Hwan CHUN ,  Jong Seok LEE ,  Su Bin KANG

IPC: H01L23/00 ,  B23K35/30 ,  B23K20/02 ,  B23K35/02

CPC classification number: H01L24/83 ,  B23K1/19 ,  B23K20/02 ,  B23K20/026 ,  B23K35/025 ,  B23K35/3006 ,  B23K2103/08 ,  B23K2103/18 ,  B23K2103/52 ,  B23K2103/56 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/27332 ,  H01L2224/2741 ,  H01L2224/27848 ,  H01L2224/29109 ,  H01L2224/29139 ,  H01L2224/29309 ,  H01L2224/29339 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32507 ,  H01L2224/83097 ,  H01L2224/832 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/83906

Abstract: Disclosed is a method for bonding with a silver paste, the method including: coating a silver paste on a semiconductor device or a substrate, the silver paste containing silver and indium; disposing the semiconductor on the substrate; and heating the silver paste to form a bonding layer, wherein the semiconductor device and the substrate are bonded to each other through the bonding layer, and wherein the indium is contained in the silver paste at 40 mole % or less.

Abstract translation: 公开了一种用银膏粘合的方法，该方法包括：在半导体器件或基板上涂覆银膏，含有银和铟的银膏; 将半导体布置在基板上; 并且加热银膏以形成接合层，其中半导体器件和衬底通过接合层彼此接合，并且其中铟含量在40％（摩尔）以下。

公开(公告)号：US20160141266A1

公开(公告)日：2016-05-19

申请号：US14800613

申请日：2015-07-15

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Kyoung-Kook HONG ,  Hyun Woo NOH ,  Youngkyun JUNG ,  Dae Hwan CHUN ,  Jong Seok LEE ,  Su Bin KANG

IPC: H01L23/00 ,  B23K35/30 ,  B23K35/02 ,  B23K35/26 ,  B23K1/00 ,  H05K3/34

CPC classification number: H01L24/83 ,  B23K20/026 ,  B23K20/16 ,  B23K20/233 ,  B23K35/025 ,  B23K35/264 ,  B23K35/3006 ,  B23K2101/42 ,  B23K2103/166 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13294 ,  H01L2224/13313 ,  H01L2224/13339 ,  H01L2224/16227 ,  H01L2224/16505 ,  H01L2224/29294 ,  H01L2224/29313 ,  H01L2224/29339 ,  H01L2224/32227 ,  H01L2224/32505 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81825 ,  H01L2224/8184 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2924/00015 ,  H01L2924/10272 ,  H01L2924/201 ,  H01L2924/2075 ,  H01L2924/20751 ,  H05K3/341 ,  H05K3/3463 ,  H05K2201/10166 ,  H05K2203/1131 ,  H01L2224/29388 ,  H01L2924/00014 ,  H01L2224/13388 ,  H01L2924/00012

Abstract: A method for bonding with a silver paste includes coating a semiconductor device or a substrate with the silver paste. The silver paste contains a plurality of silver particles and a plurality of bismuth particles. The method further includes disposing the semiconductor on the substrate and forming a bonding layer by heating the silver paste, wherein the semiconductor and the substrate are bonded to each other by the bonding layer.

Abstract translation: 用银膏粘合的方法包括用银膏涂覆半导体器件或衬底。 银糊含有多个银颗粒和多个铋颗粒。 该方法还包括将半导体布置在衬底上并通过加热银膏形成接合层，其中半导体和衬底通过接合层彼此接合。