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    IMAGE SENSING DEVICE AND CAMERA
    3.
    发明申请
    IMAGE SENSING DEVICE AND CAMERA 有权
    图像传感装置和摄像机

    公开(公告)号：US20110242388A1

    公开(公告)日：2011-10-06

    申请号：US13139558

    申请日：2010-01-20

    申请人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    发明人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689 ,  H01L29/7833

    摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.

    摘要翻译： 图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和 复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离 区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度 的第二元件隔离区域低于n型杂质区域。

    Image sensing device and camera
    4.
    发明授权
    Image sensing device and camera 有权
    影像传感装置及相机

    公开(公告)号：US08482646B2

    公开(公告)日：2013-07-09

    申请号：US13139558

    申请日：2010-01-20

    申请人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    发明人： Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa ,  Hajime Ikeda ,  Yasuhiro Sekine ,  Akira Ohtani ,  Takeshi Kojima

    IPC分类号： H04N3/14 ,  H04N5/335 ,  C12Q1/68 ,  H01J40/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/00

    CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689 ,  H01L29/7833

    摘要： An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.

    摘要翻译： 图像感测装置包括像素阵列，外围电路，列选择电路和读出器，其中每个像素包括光电二极管，浮动扩散，到浮动扩散的转移PMOS晶体管，放大器PMOS晶体管和 复位PMOS晶体管，放大器PMOS晶体管具有由n型导电图案形成的栅极，并且被第一元件隔离区域和覆盖至少第一元件隔离的下部的n型杂质区隔离 区域，并且列选择电路中包括的每个PMOS晶体管具有由p型导电图案形成并由第二元件隔离区域隔离的栅极，并且与下部分相邻的区域中的n型杂质浓度 的第二元件隔离区域低于n型杂质区域。

    Photoelectric conversion apparatus and imaging system having revision with multiple impurity densities
    5.
    发明授权
    Photoelectric conversion apparatus and imaging system having revision with multiple impurity densities 有权
    具有多个杂质浓度修正的光电转换装置和成像系统

    公开(公告)号：US08779544B2

    公开(公告)日：2014-07-15

    申请号：US13131442

    申请日：2010-01-26

    申请人： Yuichiro Yamashita ,  Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa

    发明人： Yuichiro Yamashita ,  Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa

    IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/062

    CPC分类号： H01L27/1464 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14672 ,  H01L27/14674 ,  H01L27/14689 ,  H01L31/062

    摘要： A photoelectric conversion apparatus comprises multiple photoelectric conversion portions (51) disposed in a semiconductor substrate (5B) wherein each photoelectric conversion portion (51) includes: a P-type charge accumulating area (107) containing a first impurity; and an N-type well portion (102) that, along with the P-type charge accumulating area, configures a photodiode, and each well portion has: an N-type first semiconductor region (102a) containing arsenic at a first density; an N-type second semiconductor region (102b,102C) disposed below the first semiconductor region and containing arsenic at a second density that is lower than the first density; and an N-type third semiconductor region (102d) disposed below the second semiconductor region and containing a second impurity at a third density that is higher than the first density.

    摘要翻译： 光电转换装置包括设置在半导体衬底（5B）中的多个光电转换部分（51），其中每个光电转换部分（51）包括：含有第一杂质的P型电荷累积区域（107） 以及与P型电荷蓄积区一起构成光电二极管的N型阱部（102），每个阱部具有：以第一密度含有砷的N型第一半导体区域（102a） 设置在所述第一半导体区域下方并且以比所述第一密度低的第二密度含有砷的N型第二半导体区域（102b，102C） 以及设置在所述第二半导体区域下方并且以比所述第一密度高的第三密度容纳第二杂质的N型第三半导体区域（102d）。

    PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM
    6.
    发明申请
    PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM 有权
    光电转换装置和成像系统

    公开(公告)号：US20110234868A1

    公开(公告)日：2011-09-29

    申请号：US13131442

    申请日：2010-01-26

    申请人： Yuichiro Yamashita ,  Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa

    发明人： Yuichiro Yamashita ,  Takanori Watanabe ,  Mineo Shimotsusa ,  Takeshi Ichikawa

    IPC分类号： H04N5/335 ,  H01L27/144

    CPC分类号： H01L27/1464 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14672 ,  H01L27/14674 ,  H01L27/14689 ,  H01L31/062

    摘要： A photoelectric conversion apparatus comprises multiple photoelectric conversion portions (51) disposed in a semiconductor substrate (5B) wherein each photoelectric conversion portion (51) includes: a P-type charge accumulating area (107) containing a first impurity; and an N-type well portion (102) that, along with the P-type charge accumulating area, configures a photodiode, and each well portion has: an N-type first semiconductor region (102a) containing arsenic at a first density; an N-type second semiconductor region (102b,102C) disposed below the first semiconductor region and containing arsenic at a second density that is lower than the first density; and an N-type third semiconductor region (102d) disposed below the second semiconductor region and containing a second impurity at a third density that is higher than the first density.

    摘要翻译： 光电转换装置包括设置在半导体衬底（5B）中的多个光电转换部分（51），其中每个光电转换部分（51）包括：包含第一杂质的P型电荷累积区域（107） 以及与P型电荷蓄积区一起构成光电二极管的N型阱部（102），每个阱部具有：以第一密度含有砷的N型第一半导体区域（102a） 设置在所述第一半导体区域下方并且以比所述第一密度低的第二密度含有砷的N型第二半导体区域（102b，102C） 以及设置在所述第二半导体区域下方并且以比所述第一密度高的第三密度容纳第二杂质的N型第三半导体区域（102d）。

    Solid-state imaging apparatus
    7.
    发明授权
    Solid-state imaging apparatus 有权
    固态成像装置

    公开(公告)号：US09000343B2

    公开(公告)日：2015-04-07

    申请号：US13807002

    申请日：2011-06-23

    申请人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

    发明人： Takeshi Ichikawa ,  Mineo Shimotsusa ,  Genzo Momma

    IPC分类号： H01L27/146 ,  H01L31/00

    CPC分类号： H01L27/14636 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469

    摘要： The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.

    摘要翻译： 固态摄像装置技术领域本发明涉及具有多个光电转换单元的第一基板和具有多个读出电路的第二基板的固体摄像装置。 第一基板设置有彼此电分离的多个第一导电图案，并且第二基板设置有彼此电分离的多个第二导电图案。 第一导电图案各自包括沿第一方向延伸的第一部分图案。 第二导电图案各自包括沿与第一方向不同的第二方向延伸的部分图案。 第一部分图案具有在第一方向上比第二方向上的长度长的长度。