摘要:
In a memory element with a first number of memory cells having a first retention time for holding a content of the memory cells and a second number of memory cells having a second retention time for holding the content of the memory cell, a method for refreshing the memory cells comprises a step of refreshing the first number of memory cells when reaching the first retention time and a step of refreshing the second number of memory cells when reaching the second retention time. An apparatus for refreshing the memory cells of the memory element is provided for refreshing the first number of memory cells when reaching the first retention time, and for refreshing the second number of memory cells when reaching the second retention time.
摘要:
The invention relates to a measuring probe for measuring the thickness of thin layers with a housing, having at least one sensor element, which is received in the housing at least slightly moveably along a longitudinal axis and which comprises at least one winding device, which is allocated to the longitudinal axis, having a spherical positioning cap facing the outer front face of the housing, said cap being arranged in the longitudinal axis, wherein the spherical positioning cap has a basic body that has a cylindrical core section and a pole cap arranged on a front face of the core section, wherein the winding device is allocated to the spherical positioning cap, said winding device being formed from a discoidal or annular carrier with at least one Archimedean coil arranged thereon and with the basic body consisting of a ferritic material and the pole cap consisting of a hard metal.
摘要:
The invention relates to a calibration standard, especially for the calibration of devices for the non-destructive measurement of the thickness of thin layers with a carrier plate (16) of a basic material and a standard (17) applied on the carrier plate (16), said standard having the thickness of the layer at which the device is to be calibrated, wherein that a holding device (22) arranged on the basic body (12) of the calibration standard (11) receives at least the standard (17) to the basic body (12) such that upon setting a measuring probe of the device for the non-destructive measurement of thin layers onto the standard (17), its position will be changeable by at least one degree of freedom.
摘要:
A method for producing an integrated memory module containing a command decoding device that responds to external operation commands to set operating states of the memory module for carrying out operations in accordance with a predetermined specification of the memory module. The command decoding device is formed with a decision memory containing memory locations Mi,j, the storage capacity of which suffices to receive, for an arbitrary specification from a plurality of different specifications, a decision information item specifying whether or how the second operation command of selected pairs of two directly successive operation commands is to be executed. After integration of the command decoding device thus formed, the decision information items demanded in the case of the predetermined specification are written to the memory locations of the decision memory.
摘要:
An apparatus for non-destructive measurement of the thickness of thin layers, has a housing and a probe which is connected to an evaluation unit and to which signals are emitted during a measurement for determining the layer thickness, and having a display apparatus which indicates at least the measurement data from the evaluation unit. At least one further display apparatus is positioned on the housing away from the plane of the first display apparatus.
摘要:
A prestage for generating a control signal for an output driver of an integrated circuit, wherein the integrated circuit can be provided with a reference potential and a supply potential fixed in relation to the reference potential, comprises an input for receiving an input signal from the integrated circuit, a circuitry for generating an output signal based on the received input signal, an output for outputting the generated output signals as control signal for an output driver as well as a current source, which is effectively connected to the circuitry. Thereby, the circuitry for generating an output signal and the current source are connected in series and connected to a first potential and a second potential such that a prestage potential difference across the series circuit is higher than a supply potential difference between the supply potential and the reference potential. Such a prestage has the advantage that it is less sensitive against variations on the reference potential or the reference potential, respectively, than conventional circuitries and can generate an output signal with well defined rise times.
摘要:
The present invention relates to an input circuit for receiving an input signal in an integrated circuit, having a differential amplifier whose first input can have a predetermined reference voltage applied to it and whose second input can have the input signal applied to it, and having a current source for operating the differential amplifier at its operating point, wherein a setting circuit is connected to the current source in order to set the operating point of the differential amplifier in an optimum manner on the basis of the predetermined reference voltage.
摘要:
In a semiconductor memory, there is capacitive coupling between bit lines that largely run in parallel. Outer sections of the bit lines are connected via respective switches to a sense amplifier arranged between the switches. When a memory cell is being read, the capacitive interference by other bit lines that are not coupled to the memory cell being read is kept as low as possible before the start of amplification by the sense amplifier by turning on the switches in that bit line. During the amplification phase, the remote outer section of that bit line is disconnected using the appropriate switch. In one embodiment, the capacitance of the bit line that is not connected to the memory cell to be read is increased further by additionally activating a precharging circuit.
摘要:
A storage circuit comprises a first clock receiver circuit for receiving an external clock signal so as to produce from said external clock signal a first internal clock signal and so as to output the first internal clock signal for use within the storage circuit, as well as a second clock receiver circuit for receiving said external clock signal and for producing from said external clock signal a second internal clock signal, said second clock receiver circuit consuming less current than said first clock receiver circuit. In addition, a circuit block is provided, which operates on the basis of said first or second internal clock signal and which is used for switching off said first clock receiver circuit when a power-down-precharge mode exists, said circuit block operating on the basis of said second internal clock signal, when the first clock receiver circuit has been switched off. A reduced current consumption can be achieved by the present invention in this way.
摘要:
Data register for storage of a data bit with integrated signal level conversion. The data register has an input for application of a data bit input signal which has a first voltage shift between a reference ground potential and a first voltage potential, a controllable switching device for passing on the applied data bit signal, a potential isolating transistor having a control connection at the first voltage potential, a first inverter which emits, in inverted form, the passed-on data bit input signal as a data bit output signal having a second voltage shift between the reference ground potential and a second supply potential, at one output of the data register for further data processing, and a second inverter, which feeds back the data output signal for storage of the data bit.