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140 条记录 (耗时 0.038 秒)

    Method for vaporizing and supplying organometal compounds
    1.
    发明授权
    Method for vaporizing and supplying organometal compounds 失效
    蒸发和供应有机金属化合物的方法

    公开(公告)号：US5377616A

    公开(公告)日：1995-01-03

    申请号：US150532

    申请日：1993-11-09

    申请人： Hiroshi Mihira ,  Tetsuo Shimizu ,  Kazuhiro Hirahara ,  Toshinobu Ishihara ,  Seiki Takaya

    发明人： Hiroshi Mihira ,  Tetsuo Shimizu ,  Kazuhiro Hirahara ,  Toshinobu Ishihara ,  Seiki Takaya

    IPC分类号： C23C16/448 ,  C30B25/02 ,  C30B25/14 ,  H01L21/205

    CPC分类号： C30B25/02 ,  C23C16/4485 ,  C23C16/45561 ,  C30B25/14 ,  C30B29/40 ,  Y10S117/919 ,  Y10T117/1004

    摘要： A method for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber which comprises the steps of heating an organometal compound to a predetermined temperature to obtain vapor of the compound at a predetermined vapor pressure and supplying, in a constant flow rate, the vapor to the surface of a substrate heated under a reduced pressure: an apparatus for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber 11 comprising a first gas flow path for the vapor of the organometal compound which connects a container 20, in which the organometal compound is charged, to a crystal growth chamber heated under a reduced pressure through a first valve 21, a first massflow controller 22 and a second valve 23 in this order; and a constant temperature oven 24 and 25 for controlling the temperature of the container 20 and the first gas flow path extending from the container 20 to the second valve 23, are herein disclosed. The method and the apparatus makes it possible to form a thin film on substrate having even a large surface area and uniform composition and thickness with good reproducibility and to provide an epitaxial thin film of a compound semiconductor having good sharpness of the crystal growing boundary; the method further makes it possible to prevent the contamination of the solid organometal compound and to provide good workability.

    摘要翻译： 一种用于蒸发有机金属化合物并将其产生的蒸气供应到晶体生长室的方法，该方法包括以下步骤：将有机金属化合物加热至预定温度以获得化合物的蒸气，并以预定的蒸汽压进行，并以恒定的流量 蒸气到减压下加热的基底表面：用于蒸发有机金属化合物并将其产生的蒸气供应到晶体生长室11的装置，该结晶生长室11包括有机金属化合物蒸汽的第一气体流路， 通过第一阀21，第一质量流量控制器22和第二阀23依次向经过减压加热的晶体生长室中装入有机金属化合物的容器20; 以及用于控制容器20的温度和从容器20延伸到第二阀23的第一气体流路的恒温箱24和25。 该方法和装置使得可以在具有大的表面积和均匀的组成和厚度的基板上形成薄膜，具有良好的再现性，并且提供具有良好的晶体生长边界锐度的化合物半导体的外延薄膜; 该方法还可以防止固体有机金属化合物的污染并提供良好的可加工性。

    Cross-linked polymer solid electrolyte, method of manufacturing cross-linked solid polymer electrolyte, composite solid electrolyte, and thin solid cell employing composite solid electrolyte
    4.
    发明授权
    Cross-linked polymer solid electrolyte, method of manufacturing cross-linked solid polymer electrolyte, composite solid electrolyte, and thin solid cell employing composite solid electrolyte 失效
    交联聚合物固体电解质，交联固体高分子电解质的制造方法，复合固体电解质和采用复合固体电解质的薄型固体电池

    公开(公告)号：US6096234A

    公开(公告)日：2000-08-01

    申请号：US9066

    申请日：1998-01-20

    申请人： Toru Nakanishi ,  Kazuhiro Hirahara ,  Toshinobu Ishihara ,  Yoshinobu Isono ,  Atsushi Takano

    发明人： Toru Nakanishi ,  Kazuhiro Hirahara ,  Toshinobu Ishihara ,  Yoshinobu Isono ,  Atsushi Takano

    IPC分类号： H01M6/18 ,  H01M10/052 ,  H01M10/0565

    CPC分类号： H01M10/052 ,  H01M10/0565 ,  H01M6/181 ,  Y10S525/941

    摘要： There is disclosed a cross-linked polymer solid electrolyte and a method of manufacturing the same. A crosslinking agent is added to a block-graft copolymer composed of a polymer block chain A represented by formula I and a polymer block chain B represented by formula II; a high energy ray is irradiated to the block-graft polymer in order to crosslink the entire system; and an nonaqueous electrolytic solution is added to the block-graft polymer. There is also disclosed a composite solid electrolyte for use in a solid electrochemical element. The composite solid electrolyte includes an electrically insulating material, an alkali metal salt, a block-graft copolymer composed of a polymer block chain A represented by formula I and a polymer block chain B represented by formula II, and an aprotic organic solvent. ##STR1##

    摘要翻译： 公开了一种交联聚合物固体电解质及其制造方法。 将交联剂加入到由式I表示的聚合物嵌段链A和由式II表示的聚合物嵌段链B组成的嵌段共聚物中; 为了交联整个体系，将高能射线照射到嵌段接枝聚合物上; 并向嵌段聚合物中加入非水电解液。 还公开了一种用于固体电化学元件的复合固体电解质。 复合固体电解质包括电绝缘材料，碱金属盐，由式I表示的聚合物嵌段链A和由式II表示的聚合物嵌段链B组成的嵌段共聚物和非质子性有机溶剂。

    Method for producing molecule immobilizing substrate, and molecule immobilizing substrate
    5.
    发明授权
    Method for producing molecule immobilizing substrate, and molecule immobilizing substrate 有权
    制备分子固定底物的方法和分子固定底物

    公开(公告)号：US09034661B2

    公开(公告)日：2015-05-19

    申请号：US12709020

    申请日：2010-02-19

    申请人： Wataru Kusaki ,  Toshinobu Ishihara ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Wataru Kusaki ,  Toshinobu Ishihara ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： G01N33/544 ,  G01N33/543 ,  G01N33/53 ,  C08L83/04 ,  C08L83/06

    CPC分类号： G01N33/54393 ,  C08L83/04 ,  C08L83/06 ,  G01N33/543 ,  G01N33/54353

    摘要： There is disclosed a method for producing a molecule immobilizing substrate, comprising at least the steps of: forming, on a substrate, a monomolecular film including hydroxyl groups, cyano groups, or oxiranyl groups, which are oriented toward an outmost surface of the monomolecular film; and chemically modifying the hydroxyl groups, cyano groups, or oxiranyl groups of the monomolecular film to transform them into carboxyl groups, to thereby form, on the substrate, the monomolecular film including the carboxyl groups, which are oriented toward an outmost surface of the monomolecular film. There can be provided: a method for producing a molecule immobilizing substrate which is free of occurrence of an immobilized-molecule peeling problem in the case of conducting an assay by immobilizing molecules on the substrate.

    摘要翻译： 公开了一种分子固定基板的制造方法，至少包括以下步骤：在基板上形成包含羟基，氰基或环氧乙烷基的单分子膜，该单分子膜朝向单分子膜的最外表面 ; 并对单分子膜的羟基，氰基或环氧乙烷基进行化学改性，将其转化为羧基，从而在基材上形成包含羧基的单分子膜，该单分子膜朝向单分子膜的最外表面 电影。 可以提供：在通过将分子固定在基材上进行测定的情况下，制备不存在固定化分子剥离问题的分子固定化基质的方法。

    Double patterning process
    6.
    发明授权
    Double patterning process 有权
    双重图案化工艺

    公开(公告)号：US08129100B2

    公开(公告)日：2012-03-06

    申请号：US12418090

    申请日：2009-04-03

    申请人： Katsuya Takemura ,  Jun Hatakeyama ,  Kazumi Noda ,  Mutsuo Nakashima ,  Masaki Ohashi ,  Toshinobu Ishihara

    发明人： Katsuya Takemura ,  Jun Hatakeyama ,  Kazumi Noda ,  Mutsuo Nakashima ,  Masaki Ohashi ,  Toshinobu Ishihara

    IPC分类号： G03F7/11 ,  G03F7/20 ,  G03F7/40 ,  G03F7/039

    CPC分类号： G03F7/0035 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/40

    摘要： Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.

    摘要翻译： 通过涂覆化学放大的正性抗蚀剂组合物形成双重图案，所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB和显影 用碱性显影剂形成正的抗蚀剂图案，将正性抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆负性抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能辐射PEB， 并用碱性显影剂显影以形成负的抗蚀剂图案。 最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。

    METHOD FOR PRODUCING HOLLOW STRUCTURE
    7.
    发明申请
    METHOD FOR PRODUCING HOLLOW STRUCTURE 有权
    生产中空结构的方法

    公开(公告)号：US20110123935A1

    公开(公告)日：2011-05-26

    申请号：US12909329

    申请日：2010-10-21

    申请人： Wataru Kusaki ,  Toshinobu Ishihara

    发明人： Wataru Kusaki ,  Toshinobu Ishihara

    IPC分类号： G03F7/20 ,  B32B38/10

    CPC分类号： B32B38/10

    摘要： Provided is a fabrication method with which a laminate having a hollow structure can be produced more easily, while enabling to produce a multilayer structure as well. That is, a method for producing a hollow structure, a fabrication method by stacking-up a structural material among fabrication methods of a hollow structure on a substrate, the method including a step of forming a structural material layer on a substrate, a step of forming a pattern on the structural material layer, a step of forming a sacrificial material layer by burying between the patterns with a water-soluble or an alkaline-soluble polymer as the sacrificial material to be buried between the patterns, a step of further laminating a structural material layer and forming a pattern on the structural material layer laminated, and a step of finally removing the sacrificial material after all of lamination is completed.

    摘要翻译： 提供了一种能够更容易地制造具有中空结构的层叠体的制造方法，同时能够制造多层结构。 也就是说，制造中空结构体的方法，在基材的中空结构体的制造方法中堆叠结构材料的制造方法，该方法包括在基板上形成结构材料层的工序， 在结构材料层上形成图案，通过用水溶性或碱溶性聚合物之间掩埋图案形成牺牲材料层作为待掩埋在图案之间的牺牲材料的步骤，进一步层压 结构材料层并在层压的结构材料层上形成图案，并且完成所有层压之后最后去除牺牲材料的步骤。

    Halftone phase shift mask blank, and method of manufacture
    8.
    发明授权
    Halftone phase shift mask blank, and method of manufacture 有权
    半色调相移掩模空白及其制造方法

    公开(公告)号：US07622228B2

    公开(公告)日：2009-11-24

    申请号：US11613780

    申请日：2006-12-20

    申请人： Satoshi Okazaki ,  Toshinobu Ishihara

    发明人： Satoshi Okazaki ,  Toshinobu Ishihara

    IPC分类号： G03F1/00

    CPC分类号： G03F1/32 ,  C23C14/0676 ,  C23C14/08 ,  G03F1/68

    摘要： A halftone phase shift mask blank has a phase shifter film on a transparent substrate. The phase shifter film is composed of a metal silicide compound containing Mo, at least one metal selected from Ta, Zr, Cr and W, and at least one element selected from O, N and C. The halftone phase shift mask blank has improved processability and high resistance to chemicals, especially to alkaline chemicals.

    摘要翻译： 半色调相移掩模板在透明基板上具有移相膜。 移相器膜由含有Mo，选自Ta，Zr，Cr和W中的至少一种金属和选自O，N和C中的至少一种元素的金属硅化物化合物组成。半色调相移掩模毛坯具有改善的加工性 耐化学品，特别是碱性化学品。