公开(公告)号：US07750351B2

公开(公告)日：2010-07-06

申请号：US11386844

申请日：2006-03-23

申请人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

发明人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

IPC分类号： H01L23/29 ,  H01L21/04

CPC分类号： H01L29/7787 ,  H01L29/66462 ,  Y10S438/931

摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

摘要翻译： 一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

公开(公告)号：US20070069253A1

公开(公告)日：2007-03-29

申请号：US11386844

申请日：2006-03-23

申请人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

发明人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

IPC分类号： H01L29/80

CPC分类号： H01L29/7787 ,  H01L29/66462 ,  Y10S438/931

摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

摘要翻译： 一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

公开(公告)号：US20070069239A1

公开(公告)日：2007-03-29

申请号：US11523740

申请日：2006-09-20

申请人： Masayoshi Kosaki ,  Koji Hirata

发明人： Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16

摘要： An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula AlxGa1-xN; a non-single-crystalline second buffer layer, disposed on the first buffer layer, containing a semiconductor represented by the formula AlyGa1-yN; and an undoped base layer, disposed on the second buffer layer, containing GaN, wherein 0

摘要翻译： 电子装置包括：基板; 设置在所述衬底上的单晶第一缓冲层，其包含由式Al x Ga 1-x N表示的半导体; 设置在第一缓冲层上的非单晶第二缓冲层，含有由式Al 1 Ga 1-y N表示的半导体; 以及设置在第二缓冲层上的含有GaN的未掺杂的基底层，其中0

公开(公告)号：US07554132B2

公开(公告)日：2009-06-30

申请号：US11523740

申请日：2006-09-20

申请人： Masayoshi Kosaki ,  Koji Hirata

发明人： Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L31/072

CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16

摘要： An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula AlxGa1−xN; a non-single-crystalline second buffer layer, disposed on the first buffer layer, containing a semiconductor represented by the formula AlyGa1−yN; and an undoped base layer, disposed on the second buffer layer, containing GaN, wherein 0

摘要翻译： 电子装置包括：基板; 设置在所述基板上的含有由式Al x Ga 1-x N表示的半导体的单晶第一缓冲层; 设置在第一缓冲层上的含有由式Al y Ga 1-y N表示的半导体的非单晶第二缓冲层; 以及设置在第二缓冲层上的含有GaN的未掺杂的基底层，其中0

公开(公告)号：US20070063220A1

公开(公告)日：2007-03-22

申请号：US11523095

申请日：2006-09-19

申请人： Masayoshi Kosaki ,  Koji Hirata

发明人： Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L29/2003

摘要： A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula AlxGa1-xN decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula AlxGa1-xN of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.

摘要翻译： 场效应晶体管包括具有通道的沟道层和载流子供应层，该沟道层设置在沟道层上，该沟道层包含由式Al x Ga 1-x N，其中x大于0.04且小于0.45。 通道形成在沟道层和载流子供应层之间的界面附近，或者耗尽，载流子供应层的带隙能量大于沟道层的带隙能量，并且公式A1 x x 随着与界面的距离的增加，Ga 1-x N单调减小。 沟道层可以是氮化镓的结晶。 通道层可以是未掺杂的。 载体供给层的式Al x Ga 1-x N的X在界面处大于或等于0.15且小于或等于0.40。

公开(公告)号：US07432538B2

公开(公告)日：2008-10-07

申请号：US11523095

申请日：2006-09-19

申请人： Masayoshi Kosaki ,  Koji Hirata

发明人： Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003

摘要： A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. The channel is formed near the interface between the channel layer and the carrier supply layer or depleted, the carrier supply layer has a band gap energy greater than that of the channel layer, and x in the formula AlxGa1-xN decreases monotonically with an increase in the distance from the interface. The channel layer may be crystalline of gallium nitride. The channel layer may be undoped. X of the formula AlxGa1-xN of the carrier supply layer is greater than or equal to 0.15 and less than or equal to 0.40 at the interface.

摘要翻译： 场效应晶体管包括具有通道的沟道层和载流子供应层，该沟道层设置在沟道层上，该沟道层包含由式Al x Ga 1-x N，其中x大于0.04且小于0.45。 通道形成在沟道层和载流子供应层之间的界面附近，或者耗尽，载流子供应层的带隙能量大于沟道层的带隙能量，并且公式A1 x x 随着与界面的距离的增加，Ga 1-x N单调减小。 沟道层可以是氮化镓的结晶。 通道层可以是未掺杂的。 载体供给层的式Al x Ga 1-x N的X在界面处大于或等于0.15且小于或等于0.40。

公开(公告)号：US20070278532A1

公开(公告)日：2007-12-06

申请号：US11578965

申请日：2005-06-09

申请人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

发明人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L21/338 ,  H01L29/812 ,  H01L21/36

CPC分类号： H01L29/66462 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

摘要翻译： 一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构， 层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层 平面。

公开(公告)号：US07981744B2

公开(公告)日：2011-07-19

申请号：US11578965

申请日：2005-06-09

申请人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

发明人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

IPC分类号： H01L21/336 ,  H01L21/3205

CPC分类号： H01L29/66462 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

摘要翻译： 一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构， 层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层 平面。

公开(公告)号：US20090173969A1

公开(公告)日：2009-07-09

申请号：US12225580

申请日：2007-05-30

申请人： Junjiro Kikawa ,  Akira Suzuki ,  Masayoshi Kosaki ,  Koji Hirata

发明人： Junjiro Kikawa ,  Akira Suzuki ,  Masayoshi Kosaki ,  Koji Hirata

IPC分类号： H01L29/778 ,  H01L33/00

CPC分类号： H01L29/7786 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003

摘要： A semiconductor device having an AlGaN—GaN heterojunction structure including an AlGaN layer and a GaN layer which device exhibits no changes over time in sheet resistance.As shown in FIG. 1, in a semiconductor device having an AlGaN—GaN heterojunction structure including an AlGaN layer 1 and a GaN layer 2, when the Al molar fraction of AlGaN (x %) and the thickness of the AlGaN layer (y nm) satisfy the relations: x+y

摘要翻译： 具有包括AlGaN层和GaN层的AlGaN-GaN异质结结构的半导体器件，该器件在薄层电阻上随时间呈现不变化。 如图所示。 如图1所示，在具有包括AlGaN层1和GaN层2的AlGaN-GaN异质结结构的半导体器件中，当AlGaN的Al摩尔分数（x％）和AlGaN层的厚度（ynm）满足以下关系时： x + y <55，25 <= x <= 40，y> = 10，y小于临界厚度，从而在AlGaN层中不产生裂纹。 因此，本发明提供一种半导体器件，尽管Al摩尔分数高，实际上其表面电阻几乎没有随时间变化。

公开(公告)号：US20150002829A1

公开(公告)日：2015-01-01

申请号：US14377302

申请日：2012-02-09

申请人： Koji Hirata ,  Miyuki Ikeda ,  Tatsuya Ishikawa ,  Hiroyuki Shinji

发明人： Koji Hirata ,  Miyuki Ikeda ,  Tatsuya Ishikawa ,  Hiroyuki Shinji

IPC分类号： G03B21/54 ,  G03B21/14

CPC分类号： G03B21/54 ,  G03B21/14 ,  G03B21/145

摘要： Provided is a projection-type image display device which by means of a projection lens (2) magnifies and projects an optical image formed by a light source and an image display element, wherein an error indicator (5) for indicating anomalies in the device is disposed on the rear surface opposite the front surface of a device housing (1) to which the projection lens (2) is attached. The projection-type image display device further includes an AC voltage monitor unit (12) for monitoring voltage waveforms supplied form an external power source and retaining voltage waveform data during the latest prescribed period in a memory, and reads out the voltage waveform data from the external power source retained in the memory and displays the voltage waveform data on the error indicator (5) as said anomalies.

摘要翻译： 提供一种通过投影透镜（2）放大并投影由光源形成的光学图像和图像显示元件的投影型图像显示装置，其中，用于指示装置中的异常的误差指示器（5） 设置在与投影透镜（2）所附接的装置壳体（1）的前表面相对的后表面上。 投影型图像显示装置还包括用于监视从外部电源提供的电压波形并将最近规定期间内的电压波形数据保存在存储器中的AC电压监视器单元（12），并从 外部电源保留在存储器中，并将错误指示器（5）上的电压波形数据显示为所述异常。