公开(公告)号：US20060103299A1

公开(公告)日：2006-05-18

申请号：US11272471

申请日：2005-11-10

申请人： Hoi Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L51/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US20070114522A1

公开(公告)日：2007-05-24

申请号：US11590531

申请日：2006-10-31

申请人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

IPC分类号： H01L29/08

CPC分类号： H01L27/3209 ,  G09G3/3216 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0439 ,  H01L27/3202 ,  H01L27/3267 ,  H01L27/3286 ,  H01L2251/5323

摘要： An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.

摘要翻译： 描述可以在两侧显示独立图像的有机发光二极管显示器。 该显示可以用无源矩阵或有源矩阵方案驱动。 本发明结合了独特的堆叠有机二极管结构和涉及时序反向场的特殊驱动方案。

公开(公告)号：US20090134790A1

公开(公告)日：2009-05-28

申请号：US12339431

申请日：2008-12-19

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US20080203394A1

公开(公告)日：2008-08-28

申请号：US11604094

申请日：2006-11-24

申请人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L31/036 ,  H01L21/00

CPC分类号： H01L27/124

摘要： The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

摘要翻译： 本发明提供一种有源矩阵薄膜晶体管阵列的方法，包括由一层金属导体形成的两层金属互连; 源极，漏极和栅电极的薄膜晶体管，全部或部分被金属取代，其中像素电极是多晶硅。

公开(公告)号：US08754416B2

公开(公告)日：2014-06-17

申请号：US11604094

申请日：2006-11-24

申请人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Dongli Zhang ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L31/036

CPC分类号： H01L27/124

摘要： The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

摘要翻译： 本发明提供一种有源矩阵薄膜晶体管阵列的方法，包括由一层金属导体形成的两层金属互连; 源极，漏极和栅电极的薄膜晶体管，全部或部分被金属取代，其中像素电极是多晶硅。

公开(公告)号：US08339026B2

公开(公告)日：2012-12-25

申请号：US13043135

申请日：2011-03-08

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US08263968B2

公开(公告)日：2012-09-11

申请号：US11590531

申请日：2006-10-31

申请人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

发明人： Hoi-Sing Kwok ,  Man Wong ,  Jiaxin Sun ,  Zhiguo Meng ,  Xiuling Zhu

IPC分类号： H01L51/52 ,  H01L27/32

CPC分类号： H01L27/3209 ,  G09G3/3216 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0439 ,  H01L27/3202 ,  H01L27/3267 ,  H01L27/3286 ,  H01L2251/5323

摘要： An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.

摘要翻译： 描述可以在两侧显示独立图像的有机发光二极管显示器。 该显示可以用无源矩阵或有源矩阵方案驱动。 本发明结合了独特的堆叠有机二极管结构和涉及时序反向场的特殊驱动方案。

公开(公告)号：US20110159610A1

公开(公告)日：2011-06-30

申请号：US13043135

申请日：2011-03-08

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

公开(公告)号：US07923911B2

公开(公告)日：2011-04-12

申请号：US12339431

申请日：2008-12-19

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Jiaxin Sun ,  Xiuling Zhu

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01J1/62

CPC分类号： H01L27/3248 ,  H01L27/1214 ,  H01L27/1277 ,  H01L51/5088 ,  H01L51/5206

摘要： Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

摘要翻译： 在诸如OLED或AMOLED的发光器件中使用金属诱导的多晶硅作为阳极。 多晶硅是充分不吸收的，透明的并且为此达到足够的导电性。 可以在多晶硅阳极上形成薄膜晶体管，硅阳极充当薄膜晶体管的漏极，从而简化生产。

公开(公告)号：US20060148217A1

公开(公告)日：2006-07-06

申请号：US11292257

申请日：2005-12-01

申请人： Man Wong ,  Hoi Kwok ,  Zhiguo Meng

发明人： Man Wong ,  Hoi Kwok ,  Zhiguo Meng

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02672 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757

摘要： The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said layer of metal to form a polycrystalline silicon layer, and irradiating the polycrystalline silicon layer with two different harmonics of a pulsed laser. The pulsed laser is preferably a solid-state laser such as a Nd-Yag laser. One harmonic is chosen such that it is preferentially absorbed by defects in the polycrystalline silicon layer, the other harmonic is absorbed by the bulk polycrystalline silicon.

摘要翻译： 本发明提供一种形成多晶硅的方法，包括以下步骤：形成非晶硅层，在非晶硅层上形成金属或含金属化合物层，将非晶硅层和所述金属层退火到 形成多晶硅层，并用脉冲激光的两个不同谐波照射多晶硅层。 脉冲激光器优选为诸如Nd-Yag激光器的固态激光器。 选择一个谐波使得其被多晶硅层中的缺陷优先吸收，另一个谐波被体多晶硅吸收。