公开(公告)号：US3626328A

公开(公告)日：1971-12-07

申请号：US3626328D

申请日：1969-04-01

Applicant: IBM

Inventor： ESAKI LEO ,  HOWARD WEBSTER E JR ,  TSU RAPHAEL

IPC: H01L29/15 ,  H01L33/00 ,  H01L47/00 ,  H01S5/30 ,  H01S5/34 ,  H03B9/12 ,  H03B7/06

CPC classification number: H01L47/00 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/157 ,  H01S5/30 ,  H01S5/34 ,  H01S5/3425 ,  H03B9/12 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/169

Abstract: The semiconductor bulk oscillator includes a body of semiconductor material which includes a superlattice portion across which an electric field is applied. The device responds to this field to produce bulk high-frequency oscillations. The superlattice portion has a one-dimensional periodic spatial variation in its band edge energy produced either by doping or alloying. The periodic variation in band edge energy provides in wave vector space a plurality of minizones which are much smaller than the Brillouin zone. A cavity-type structure is formed transverse to the superlattice portion of the device to extract outputs of electromagnetic energy at high frequencies obtained when an electric field above threshold is applied across the superlattice.

公开(公告)号：US3648124A

公开(公告)日：1972-03-07

申请号：US3648124D

申请日：1970-06-10

Applicant: IBM

Inventor： HOWARD WEBSTER E JR ,  LUDEKE PUDOLF ,  STILES PHILLIP J

IPC: H01L29/00 ,  H03K17/687 ,  H03K17/94 ,  H01L11/14

CPC classification number: H03K17/94 ,  H01L29/00 ,  H03K17/687

Abstract: A semiconductor switch, using transition metal oxides, is provided that can be made to undergo a very sudden metal-tosemiconductor transition as a function of an electric field instead of as a function of temperature. Certain transition metal oxides act like semiconductors having valence and conduction bands. When enough mobile charge carriers move into the conduction band, the gap between the conduction and valence band disappears and the metal oxide acts like a metal. The metal oxide, which is being held at a temperature very close to its transition threshold, is employed with an insulated electrode (serving as a gate) capable of supplying mobile carriers to the metal oxide. When a proper bias is applied to the gate electrode, the metal oxide is switched into its high-conduction (metal) state, allowing the flow of current therethrough.

Abstract translation: 提供了一种使用过渡金属氧化物的半导体开关，其可以作为电场的函数而不是作为温度的函数而经历非常突然的金属 - 半导体转变。 某些过渡金属氧化物像具有价带和导带的半导体一样起作用。 当足够的移动电荷载流子移动到导带中时，导通带和价带之间的间隙消失，金属氧化物像金属一样起作用。 保持在非常接近其转变阈值的温度下的金属氧化物与能够向金属氧化物供应移动载流子的绝缘电极（用作栅极）一起使用。 当对栅极施加适当的偏压时，金属氧化物被切换到其高导电（金属）状态，允许电流流过其中。

公开(公告)号：US3458798A

公开(公告)日：1969-07-29

申请号：US3458798D

申请日：1966-09-15

Applicant: IBM

Inventor： FANG FRANK F ,  HOWARD WEBSTER E JR

IPC: H02M7/21 ,  H01L29/00 ,  H02M7/12 ,  H02M7/155 ,  H02M7/217 ,  H03D1/18 ,  H02M7/44 ,  H02M7/68

CPC classification number: H03D1/18 ,  H01L29/00 ,  H02M7/1552 ,  H02M7/217

公开(公告)号：US3445733A

公开(公告)日：1969-05-20

申请号：US3445733D

申请日：1966-04-25

Applicant: IBM

Inventor： ESAKI LEO ,  HOWARD WEBSTER E JR ,  STILES PHILLIP J

IPC: H01L21/24 ,  H01L27/00 ,  H01L29/88 ,  H01L45/00 ,  H01L3/10

CPC classification number: H01L29/88 ,  H01L21/24 ,  H01L27/00 ,  H01L45/00