公开(公告)号：US3676231A

公开(公告)日：1972-07-11

申请号：US3676231D

申请日：1970-02-20

Applicant: IBM

Inventor： MEDVECKY BARTHOLOMEW P ,  OBERAI AVTAR S ,  PLATT ALAN

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/22 ,  H01L21/225 ,  H01L21/331 ,  H01L7/44

CPC classification number: H01L21/2252 ,  H01L21/00

Abstract: A METHOD FOR PRODUCING A DIFFUSED BORON REGION IN A SILICON SEMICONDUCTOR HAVING AN IMPURITY PROFILE CHARACTERIZED AS A STEP FUNCTION AND HAVING A SURFACE IMPURITY CONCENTRATION LESS THAN THE SOLID SOLUBILITY OF BORON IN SILICON WHEREIN THE BODY IS EXPOSED TO A GASEOUS MIXTURE OF O2, AND BBR3, AND AN INERT CARRIER GAS AT AN ELEVATED TEMPERATURE WHICH FORMS A GLASSY BORON RICH LAYER, AND SUBSEQUENTLY HEATING THE RESULTANT BODY IN AN OXIDIZING ENVIROMENT, OR A COMBINATION OXIDIZING AND NONOXIDIZING ENVIROMENTS, TO INCREASE THE DEPTH OF THE DIFFUSED REGION AND SIMULTANEOUSLY REDUCE THE SURFACE CONCENTRATION PRODUCING A PROFILE HAVING A STEP FUNCTION CONFIGURATION.

公开(公告)号：US3547716A

公开(公告)日：1970-12-15

申请号：US3547716D

申请日：1968-09-05

Applicant: IBM

Inventor： DEWITT DAVID ,  GATES HARLAN R ,  PLATT ALAN

IPC: H01L21/761 ,  H01L29/08 ,  H01L7/36

CPC classification number: H01L29/0821 ,  H01L21/761 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/151

公开(公告)号：US3650854A

公开(公告)日：1972-03-21

申请号：US3650854D

申请日：1970-08-03

Applicant: IBM

Inventor： DEMSKY HERBERT M ,  PLATT ALAN ,  RIDEOUT ARTHUR J ,  SAMSON ROBERT S

IPC: H01L21/00 ,  H01L21/22 ,  H01L29/00 ,  H01L29/73 ,  H01L7/44

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L21/22 ,  H01L29/73 ,  Y10S148/043 ,  Y10S148/106

Abstract: A process for producing in a transistor a slumped base profile wherein the base diffusion window is reoxidized, a layer of P2O5 is deposited over the oxide, an insulating layer deposited over the P2O5, an emitter window opened, and emitter diffusion made.

Abstract translation: 一种用于在晶体管中制造贱底基本轮廓的方法，其中基底扩散窗被再氧化，在氧化物上沉积P2O5层，沉积在P2O5上的绝缘层，打开的发射器窗口和发射极扩散。

公开(公告)号：US3649388A

公开(公告)日：1972-03-14

申请号：US3649388D

申请日：1968-11-04

Applicant: IBM

Inventor： JOSHI MADHUKAR L ,  PLATT ALAN ,  WAJDA EDWARD S

IPC: C23C16/44 ,  C30B31/06 ,  E04F17/02 ,  H01L21/00 ,  H01L21/22 ,  H01L21/223 ,  H01L21/306 ,  H01L7/44

CPC classification number: H01L21/223 ,  E04F17/02 ,  H01L21/00 ,  H01L21/306 ,  Y10S148/003 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/079

Abstract: A METHOD OF CONCURRENTLY FORMING A SHALALOW, FLAT FRONT DIFFUSION LAYER AND A HIGH SURFACE IMPURITY CONCENTRATION IN A SEMICONDUCTOR WAFER, BY PREHEATING THE WAFER TO DIFFUSION TEMPERATURE IN AN ATMOSPHERE THAT WILL NOT FORM ANY FILM, SUCH AS AN OXIDE OR NITRIDE LAYER, UPON TH SURFACE OF THE SEMICONDUCTOR WAFER; CARRYING THE DIFFUSANT,

SUCH AS AS OR P, IN A CARRIER GAS SUCH AS ARGON THAT WILL NOT INTERFERE BY LAYER FORMATION WITH THE DIFFUSION; DIFFUSING THE AS OR P TO A DEPTH NOT EXCEEDING 20 MICROINCHES; AND THEN COOLING IN AN INERT ATOMSPHERE.