公开(公告)号：US20240018686A1

公开(公告)日：2024-01-18

申请号：US18351402

申请日：2023-07-12

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Yuanyuan Shi ,  Pierre Morin ,  Benjamin Groven ,  Vladislav Voronenkov

IPC: C30B25/04 ,  C30B29/46

CPC classification number: C30B25/04 ,  C30B29/46

Abstract: In one aspect, a template for growing a crystal of a two-dimensional material can include a flat surface for growing the crystal thereon, a first wall on the flat surface, and a second wall on the flat surface. The first and the second walls can meet at a corner to form an angle having an opening that is adapted to align with the crystal structure of the crystal with a tolerance of up to 5°. Each of the first and second walls can have a length of from 5 nm to 1000 nm and a height of from 0.6 nm to 2 nm.

公开(公告)号：US20250118553A1

公开(公告)日：2025-04-10

申请号：US18904750

申请日：2024-10-02

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN

Inventor： Pierre Morin ,  Benjamin Groven ,  Vladislav Voronenkov

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/76 ,  H01L29/775 ,  H01L29/786

Abstract: A method for forming a stack including: a) providing: a flat surface, a first set of walls, comprising a first wall and a second wall, and meeting at a corner to form an angle, and a first layer formed of a two-dimensional material in physical contact with the flat surface and with both the first and second walls at the corner, wherein the angle aligns with the crystal structure of the two-dimensional material with a tolerance of up to 5°, wherein a top surface of the first layer is exposed, wherein each of the walls has a length of from 5 nm to 1000 nm, wherein a height of the walls, thereby forming a cavity delimited at least by the top surface and the first set of walls, then b) forming a second layer in the cavity and in physical contact with the exposed top surface of the first layer.

公开(公告)号：US11854803B2

公开(公告)日：2023-12-26

申请号：US17371936

申请日：2021-07-09

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Pierre Morin ,  Antony Premkumar Peter

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/02636 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3212 ,  H01L21/823431 ,  H01L29/6681

Abstract: A method for protecting a gate spacer when forming a FinFET structure, the method comprising: providing a fin with at least one dummy gate crossing the fin wherein a gate hardmask is present on top of the dummy gate; providing a gate spacer such that it is covering the dummy gate and the gate hardmask; recessing the gate spacer such that at least a part of the gate hardmask is exposed; selectively growing, by means of area selective deposition, extra capping material over the exposed part of the gate hardmask.

公开(公告)号：US20220084822A1

公开(公告)日：2022-03-17

申请号：US17371936

申请日：2021-07-09

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Pierre Morin ,  Antony Premkumar Peter

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/321

Abstract: A method for protecting a gate spacer when forming a FinFET structure, the method comprising: providing a fin with at least one dummy gate crossing the fin wherein a gate hardmask is present on top of the dummy gate; providing a gate spacer such that it is covering the dummy gate and the gate hardmask; recessing the gate spacer such that at least a part of the gate hardmask is exposed; selectively growing, by means of area selective deposition, extra capping material over the exposed part of the gate hardmask.