METHOD FOR FORMING PATTERNED DOPING REGIONS
    2.
    发明申请
    METHOD FOR FORMING PATTERNED DOPING REGIONS 有权
    形成图案区域的方法

    公开(公告)号:US20140087549A1

    公开(公告)日:2014-03-27

    申请号:US13710795

    申请日:2012-12-11

    Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

    Abstract translation: 公开了一种用于形成掺杂区域的方法,包括提供衬底,在衬底上形成第一类掺杂材料,并在衬底上形成第二类掺杂材料,其中第一类型掺杂材料与第二类掺杂材料分离 掺杂材料缺口; 形成覆盖所述基板的覆盖层,所述第一类型掺杂材料和所述第二类型掺杂材料; 并且进行热扩散处理以将第一种掺杂材料和第二类型掺杂材料扩散到衬底中。

    IMAGE SENSOR
    4.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20180083054A1

    公开(公告)日:2018-03-22

    申请号:US15813088

    申请日:2017-11-14

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

    CERAMIC COMPOSITE AND METHOD OF PREPARING THE SAME

    公开(公告)号:US20230076574A1

    公开(公告)日:2023-03-09

    申请号:US17547099

    申请日:2021-12-09

    Abstract: A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600° C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.

    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20180301485A1

    公开(公告)日:2018-10-18

    申请号:US16015307

    申请日:2018-06-22

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

    ETCHING COMPOSITION AND METHOD FOR ETCHING A SEMICONDUCTOR WAFER
    7.
    发明申请
    ETCHING COMPOSITION AND METHOD FOR ETCHING A SEMICONDUCTOR WAFER 审中-公开
    蚀刻组合物和蚀刻半导体波长的方法

    公开(公告)号:US20140080313A1

    公开(公告)日:2014-03-20

    申请号:US13725419

    申请日:2012-12-21

    CPC classification number: H01L21/30604 H01L31/02363 Y02E10/50

    Abstract: An etching composition for a semiconductor wafer is provided, including 0.5-50 wt % base, 10-80 wt % alcohol, 0.01-15 wt % additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the semiconductor wafer at 60-200° C., the etching composition reacts on the semiconductor wafer to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas. At the same time, the additive forms an oxide mask on the surface of the semiconductor wafer. Therefore, an excellent texture structure is formed on the surface of the semiconductor wafer, and a single surface of the semiconductor wafer is etched.

    Abstract translation: 提供了一种用于半导体晶片的蚀刻组合物,其包括0.5-50重量%的碱,10-80重量%的醇,0.01-15重量%的添加剂和水。 还提供了蚀刻半导体晶片的方法。 当在60-200℃下将蚀刻组合物施加到半导体晶片的整个表面或部分表面时,蚀刻组合物在半导体晶片上反应形成蚀刻半导体晶片的泡沫,并且包括固体,液体 和气体。 同时,添加剂在半导体晶片的表面形成氧化物掩模。 因此,在半导体晶片的表面上形成优良的纹理结构,并且蚀刻半导体晶片的单个表面。

    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20190074326A1

    公开(公告)日:2019-03-07

    申请号:US15850809

    申请日:2017-12-21

    CPC classification number: H01L27/307 H01L51/0015 H01L51/0026 H01L51/4206

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20170186788A1

    公开(公告)日:2017-06-29

    申请号:US15394712

    申请日:2016-12-29

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

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