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公开(公告)号：US20170018424A1
公开(公告)日：2017-01-19
申请号：US15300925
申请日：2014-04-17
发明人： Dongmei Li , Lei Zhou , Shengfa Liang , Xiaojing Li , Hao Zhang , Changqing Xie , Ming Liu
CPC分类号： H01L21/02082 , B08B3/12 , C11D3/3947 , C11D7/06 , C11D7/08 , C11D7/10 , C11D11/0047 , C11D11/007 , H01L21/02052
摘要： The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect.
摘要翻译： 本公开内容提供了一种用于清洁镓酸镓镧晶圆的方法，其包括以下步骤：在步骤1，使用由亚磷酸，过氧化氢和去离子水构成的清洁溶液来清洁硅酸镓镧镓晶圆 声波; 在步骤2中，将经清洗的硅酸镓镧硅酸盐晶片通过旋转进行漂洗和干燥; 在步骤3中，使用由氨，过氧化氢和去离子水组成的清洁溶液来用兆赫声波清洗硅酸镓镧晶圆; 在步骤4中，将清洁的硅酸镓镧晶片漂洗并通过纺丝干燥; 并且在步骤5中，将经漂洗并干燥的晶片放置在烘箱中烘烤。 本发明缩短了一段时间的酸性清洗工艺，延长了碱性清洗时间，并利用更频繁的清洁用兆赫声波来代替传统的超声波清洗，以解决在切割过程之后清洗硅酸镓镧晶片的问题， 提高镧硅酸镓晶片的表面清洁度，以获得更好的清洁效果。
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2.发明授权Method for collecting signal with sampling frequency lower than Nyquist frequency 有权采样频率低于奈奎斯特频率的信号采集方法公开(公告)号：US09455741B2
公开(公告)日：2016-09-27
申请号：US14805868
申请日：2015-07-22
发明人： Dongmei Li , Xiaojing Li , Shengfa Liang , Hao Zhang , Qing Luo , Changqing Xie , Ming Liu
CPC分类号： H03M7/3062 , H03M7/30 , H04L27/2642
摘要： A method for collecting a signal with a frequency lower than a Nyquist frequency includes, by a data transmitting end, selecting a suitable transformation base matrix for an input signal, deriving a sparse representation of the signal using the transformation base matrix to determine a sparsity of the signal, calculating a number M of compressive sampling operations according to the sparsity, sampling the signal with fNYQ/M using M channels, and integrating sampling values of each channel to obtain M measurement values. A reconstruction end reconstructs an original signal by solving optimization problems. Based on theory, compressive sampling can be performed on a sparse signal or a signal represented in a sparse manner with a frequency much lower than the Nyquist frequency, overcoming restrictions of the typical Nyquist sampling theorem. The method can be implemented simply and decrease pressure on data collection, storage, transmission and processing.
摘要翻译： 收集频率低于奈奎斯特频率的信号的方法包括：通过数据发送端，为输入信号选择合适的变换基矩阵，使用变换基矩阵导出信号的稀疏表示，以确定稀疏度 信号，根据稀疏度计算M个压缩采样操作，使用M个通道对fNYQ / M采样信号，并对每个通道的采样值进行积分以获得M个测量值。 重建结束通过解决优化问题重建原始信号。 基于理论，可以对稀疏信号或以稀疏方式表示的信号执行压缩采样，频率远低于奈奎斯特频率，克服典型奈奎斯特采样定理的限制。 该方法可以简单实现，减少数据收集，存储，传输和处理的压力。
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公开(公告)号：US10964529B2
公开(公告)日：2021-03-30
申请号：US15300925
申请日：2014-04-17
发明人： Dongmei Li , Lei Zhou , Shengfa Liang , Xiaojing Li , Hao Zhang , Changqing Xie , Ming Liu
摘要： The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect.
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公开(公告)号：US09762217B2
公开(公告)日：2017-09-12
申请号：US14888335
申请日：2013-07-15
发明人： Dongmei Li , Qing Luo , Shengfa Liang , Hongzhang Yang , Xiaojing Li , Hao Zhang , Changqing Xie , Ming Liu
摘要： A sampler adapted to a one-dimension slow-varying signal, including: a signal preprocessing unit configured to preprocess an input signal; a slope-controllable sawtooth wave signal generating unit configured to generate a slope-controllable sawtooth wave signal and perform zero-resetting; a signal comparing unit configured to compare the preprocessed input signal from the signal preprocessing unit with the sawtooth wave signal and to output a pulse signal to the generating unit and a signal outputting unit when the preprocessed input signal is equal to the sawtooth wave signal; a counting unit configured to count a number of clock signals while the sawtooth wave signal generating unit is generating the sawtooth wave signal and to transmit the counted number to the signal outputting unit; the signal outputting unit configured to, upon receipt of the pulse signal output from the signal comparing unit, output the number counted by the counting unit at the moment.
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公开(公告)号：US20240334838A1
公开(公告)日：2024-10-03
申请号：US18293846
申请日：2022-03-02
发明人： Guozhong Xing , Long Liu , Xuefeng Zhao , Di Wang , Huai Lin , Hao Zhang , Ziwei Wang
CPC分类号： H10N50/10 , G11C5/063 , G11C11/161 , G11C11/1673 , G11C11/1675 , H10B61/20 , H10N50/20 , H10N50/85 , H10N52/101
摘要： The present disclosure provides an SOT-MRAM memory cell, including: a bottom electrode; a magnetic tunnel junction layer located on the bottom electrode; an orbital Hall effect layer located on the magnetic tunnel junction layer; a first transistor, a drain of which is connected to the orbital Hall effect layer; and a second transistor, a drain of which is connected to the bottom electrode. The present disclosure further provides an SOT-MRAM memory, an operation method, and an SOT-MRAM memory array.
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6.发明授权Method for manufacturing ordered nanowire array of NiO doped with Pt in situ 有权用于原位掺杂Pt的NiO有序纳米线阵列的制备方法公开(公告)号：US09418843B2
公开(公告)日：2016-08-16
申请号：US14760890
申请日：2013-01-17
发明人： Dongmei Li , Xin Chen , Shengfa Liang , Jiebin Niu , Peiwen Zhang , Yu Liu , Xiaojing Li , Shuang Zhan , Hao Zhang , Qing Luo , Changqing Xie , Ming Liu
CPC分类号： H01L21/02565 , B82Y10/00 , B82Y40/00 , G01N33/004 , G01N33/005 , H01L21/02422 , H01L21/02581 , H01L21/02603 , H01L21/02614 , H01L21/465 , Y02A50/243
摘要： The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H2PtCl6 so as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt. The present invention is simple and practical and the sensitivity and reliability of the doped sensor on the gas of CO and H2 are greatly improved.
摘要翻译： 本公开提供了一种用于制造原位掺杂有Pt的NiO的有序纳米线阵列的方法，包括：在耐高温和绝缘的衬底上生长Ni层; 在Ni层上施加光致抗蚀剂，通过在光致抗蚀剂上施加电子束蚀刻来图案化有序纳米线阵列的图案区域，在有序纳米线阵列的图案区域上生长Ni，用丙酮剥离光致抗蚀剂并蚀刻 Ni层，以便蚀刻生长在衬底表面上的Ni层，并将Ni留在有序纳米线阵列的图案区上以形成有序的Ni纳米线阵列; 将有序的Ni纳米线阵列浸入H2PtCl6溶液中，通过置换反应置换Ni纳米线阵列上的Pt; 并在氧化炉中氧化附着有Pt的Ni纳米线阵列，以获得掺杂有Pt的NiO的有序纳米线阵列。 本发明简单实用，掺杂传感器对CO和H2气体的灵敏度和可靠性大大提高。
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