公开(公告)号：US20200066645A1

公开(公告)日：2020-02-27

申请号：US16324087

申请日：2016-09-30

Applicant: INTEL CORPORATION

Inventor： Jason A. FARMER ,  Jeffrey S. LEIB ,  Michael L. MCSWINEY ,  Harsono S. SIMKA ,  Daniel B. BERGSTROM

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522

Abstract: Embodiments of the invention include a microelectronic device that includes a substrate having a layer of dielectric material that includes a feature with a depression, a Tungsten containing barrier liner layer formed in the depression of the feature, and a Cobalt conductive layer deposited on the Tungsten containing barrier liner layer in the depression of the feature. The Tungsten containing barrier liner layer provides adhesion for the Cobalt conductive layer.

公开(公告)号：US20190393336A1

公开(公告)日：2019-12-26

申请号：US16481028

申请日：2017-03-30

Applicant: Intel Corporation

Inventor： Jeffrey S. LEIB ,  Daniel B. BERGSTROM ,  Christopher J. WIEGAND

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/66 ,  H01L23/532 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/02

Abstract: Metal chemical vapor deposition approaches for fabricating wrap-around contacts, and semiconductor structures having wrap-around metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor feature above a substrate. A dielectric layer is over the semiconductor feature, the dielectric layer having a trench exposing a portion of the semiconductor feature, the portion having a non-flat topography. A metallic contact material is directly on the portion of the semiconductor feature. The metallic contact material is conformal with the non-flat topography of the portion of the semiconductor feature. The metallic contact material has a total atomic composition including 95% or greater of a single metal species.

公开(公告)号：US20180322994A1

公开(公告)日：2018-11-08

申请号：US15773339

申请日：2015-12-07

Applicant: Intel Corporation

Inventor： Tofizur RAHMAN ,  Christopher J. WIEGAND ,  Daniel B. BERGSTROM

IPC: H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01F41/32

CPC classification number: H01F10/3254 ,  G11C11/161 ,  H01F10/3272 ,  H01F41/32 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Embodiments of the disclosure are directed to a magnetic tunneling junction (MTJ) that includes a diffusion barrier. The diffusion barrier can be disposed between two ferromagnetic layers of the MTJ. More specifically, the diffusion barrier can be disposed between a first ferromagnetic layer, which is adjacent to a natural antiferromagnetic layer, and a second ferromagnetic layer; the first and second ferromagnetic layers and the diffusion barrier being part of a synthetic antiferromagnet. The diffusion barrier can be made of a refractory metal, such as tantalum. The diffusion barrier acts as a barrier for manganese diffusion from the natural antiferromagnetic layer into the synthetic antiferromagnet and other higher layers of the MTJ.

公开(公告)号：US20190140166A1

公开(公告)日：2019-05-09

申请号：US16097801

申请日：2016-07-01

Applicant: MD Tofizur RAHMAN ,  Christopher J. WIEGAND ,  Brian MAERTZ ,  Daniel G. OUELLETTE ,  Kaan OGUZ ,  Brian S. DOYLE ,  Mark L. DOCZY ,  Daniel B. BERGSTROM ,  Justin S. BROCKMAN ,  Oleg GOLONZKA ,  Tahhir GHANI ,  Intel Corporation

Inventor： MD Tofizur RAHMAN ,  Christopher J. WIEGAND ,  Brian MAERTZ ,  Daniel G. OUELLETTE ,  Kevin P. O'BRIEN ,  Kaan OGUZ ,  Brian S. DOYLE ,  Mark L. DOCZY ,  Daniel B. BERGSTROM ,  Justin S. BROCKMAN ,  Oleg GOLONZKA ,  Tahir GHANI

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.