公开(公告)号：US20030094616A1

公开(公告)日：2003-05-22

申请号：US10300548

申请日：2002-11-20

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Frank R. Libsch ,  Tsujimura Takatoshi

IPC: H01L029/04

CPC classification number: H01L29/78669 ,  G09G2310/0254 ,  H01L27/3244 ,  H01L29/4908

Abstract: A circuit for providing a current to an organic light emitting diode comprising: (a) an amorphous silicon field effect transistor having a gate electrode and a drain electrode through which the current is provided to the organic light emitting diode; and (b) a controller for controlling a bias between the gate electrode and the drain electrode to maintain a threshold voltage shift of less than about 1V. The organic light emitting diode is preferably a component in an active matrix.

Abstract translation: 一种用于向有机发光二极管提供电流的电路，包括：（a）具有栅电极和漏电极的非晶硅场效应晶体管，电流通过该电极提供给有机发光二极管; 和（b）控制器，用于控制栅电极和漏电极之间的偏压，以保持小于约1V的阈值电压偏移。 有机发光二极管优选为有源矩阵中的成分。

公开(公告)号：US20040095297A1

公开(公告)日：2004-05-20

申请号：US10300640

申请日：2002-11-20

Applicant: International Business Machines Corporation

Inventor： Frank R. Libsch ,  James L. Sanford

IPC: G09G003/30

CPC classification number: G09G3/325 ,  G09G3/2011 ,  G09G3/3283 ,  G09G2300/0408 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0248 ,  G09G2320/0219 ,  G09G2320/0233 ,  G09G2320/0252 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2320/0626 ,  G09G2360/147

Abstract: A light emitting pixel circuit comprising a light emitting diode having a parasitic capacitance and coupled to a current source; nonlinear feedback means for rapidly charging the parasitic capacitance and for enabling immediately following such charging, illumination of the diode, responsive to a predefined constant current level from the current source.

Abstract translation: 一种发光像素电路，包括具有寄生电容并耦合到电流源的发光二极管; 非线性反馈装置用于响应于来自电流源的预定义的恒定电流水平，迅速地对寄生电容进行充电并且使紧接着进行充电，二极管的照明。

公开(公告)号：US20030095087A1

公开(公告)日：2003-05-22

申请号：US10287937

申请日：2002-11-05

Applicant: International Business Machines Corporation

Inventor： Frank R. Libsch ,  James L. Sanford

IPC: G09G003/32

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2310/0254 ,  G09G2320/043

Abstract: There is provided a circuit for driving an organic light emitting diode (OLED). The circuit includes a current source for providing current to a first terminal of the OLED, and a generator for providing a variable voltage signal to a second terminal of the OLED to facilitate control of the current.

Abstract translation: 提供了用于驱动有机发光二极管（OLED）的电路。 该电路包括用于向OLED的第一端提供电流的电流源，以及用于向OLED的第二端提供可变电压信号以促进电流的控制的发生器。

公开(公告)号：US20020093017A1

公开(公告)日：2002-07-18

申请号：US09765134

申请日：2001-01-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Paul S. Andry ,  Frank R. Libsch ,  Takatoshi Tsujimura

IPC: H01L029/04 ,  H01L031/036 ,  H01L031/0376 ,  H01L029/76 ,  H01L031/20 ,  H01L031/112 ,  H01L021/00 ,  H01L021/84 ,  H01L027/01 ,  H01L023/62 ,  H01L027/12 ,  H01L031/0392

CPC classification number: H01L29/78633 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757

Abstract: The present invention discloses a semiconductor device, a thin film transistor (TFT), and a process for forming a TFT. The semiconductor device according to the present invention comprises a top-gate type thin film transistor (TFT), said top-gate type TFT being formed on a substrate, said top-gate type TFT comprising: an insulating layer deposited on said substrate; a source electrode and a drain electrode formed from a metal-dopant compound, said metal-dopant compound being deposited on said insulating layer; a polycrystalline Si (poly-Si) layer deposited on said insulating layer and said source electrode and said drain electrode; an ohmic contact layer being formed between said metal-dpoant compound and said poly-Si layer through migration of said dopant from said metal-dopant compound; a gate insulating layer deposited on said poly-Si layer; and a gate electrode formed on said gate insulating layer, wherein said poly-Si layer is crystallized by metal induced lateral crystallization.

Abstract translation: 本发明公开了半导体器件，薄膜晶体管（TFT）和TFT的形成工艺。 根据本发明的半导体器件包括顶栅型薄膜晶体管（TFT），所述顶栅型TFT形成在衬底上，所述顶栅型TFT包括：沉积在所述衬底上的绝缘层; 由金属 - 掺杂剂化合物形成的源电极和漏电极，所述金属 - 掺杂剂化合物沉积在所述绝缘层上; 沉积在所述绝缘层和所述源电极和所述漏电极上的多晶Si（多晶硅）层; 通过所述掺杂剂从所述金属掺杂剂化合物的迁移而在所述金属掺杂化合物和所述多晶硅层之间形成欧姆接触层; 沉积在所述多晶硅层上的栅极绝缘层; 以及形成在所述栅极绝缘层上的栅电极，其中所述多晶硅层通过金属诱导的横向结晶而结晶。

公开(公告)号：US20030107565A1

公开(公告)日：2003-06-12

申请号：US10300417

申请日：2002-11-20

Applicant: International Business Machines Corporation

Inventor： Frank R. Libsch ,  James L. Sanford

IPC: G09G005/00

CPC classification number: G09G3/3233 ,  G09G3/2011 ,  G09G3/2014 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0205 ,  G09G2310/0254 ,  G09G2310/0256 ,  G09G2320/043

Abstract: There is provided a circuit for driving a current mode light modulating device. The circuit includes (a) a capacitor for storing a data voltage, (b) a field effect transistor (FET) controlled by a signal on a scan line, for coupling the data voltage from a signal line to the capacitor, and (c) a current source, controlled by the stored data voltage, for driving the device with current provided from a power line. The power line is in a plane that is geometrically parallel to a plane within which the scan line is located.

Abstract translation: 提供了用于驱动电流模式光调制装置的电路。 该电路包括：（a）用于存储数据电压的电容器，（b）由扫描线上的信号控制的场效应晶体管（FET），用于将来自信号线的数据电压耦合到电容器;以及（c） 由存储的数据电压控制的电流源，用于利用从电力线提供的电流驱动装置。 电力线位于几何平行于扫描线所在的平面的平面内。

公开(公告)号：US20030094894A1

公开(公告)日：2003-05-22

申请号：US10264409

申请日：2002-10-04

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Peter M. Fryer ,  Frank R. Libsch

IPC: H05B033/00

CPC classification number: H01L27/3246 ,  H01L27/3283

Abstract: An active matrix organic light-emitting diode comprising an organic light-emitting diode portion. The organic light-emitting diode portion comprising: an underlayer having a top surface and bottom surface; a first electrode layer which is deposited and patterned on the top surface of the underlayer such that at least a portion of the underlayer is exposed, wherein the deposited first electrode layer comprises a top surface, a bottom surface and sidewalls disposed between the top and bottom surfaces, the sidewalls are positioned adjacent to the exposed portion of the underlayer; a passivation layer deposited on the exposed portion of the underlayer and the peripheral regions of the first electrode layer such that the passivation layer covers the sidewalls and the peripheral regions of the first electrode layer; a transparent conductor layer deposited on the passivation layer and the non-peripheral regions of the first electrode layer; and a second electrode layer deposited on the transparent conductor layer.

Abstract translation: 包含有机发光二极管部分的有源矩阵有机发光二极管。 所述有机发光二极管部分包括：具有顶表面和底表面的底层; 第一电极层，其沉积并图案化在底层的顶表面上，使得底层的至少一部分被暴露，其中沉积的第一电极层包括顶表面，底表面和设置在顶层和底层之间的侧壁 表面，侧壁定位成与底层的暴露部分相邻; 沉积在所述底层的暴露部分上的钝化层和所述第一电极层的外围区域，使得所述钝化层覆盖所述第一电极层的侧壁和周边区域; 沉积在钝化层和第一电极层的非周边区域上的透明导体层; 以及沉积在所述透明导体层上的第二电极层。