公开(公告)号：US20170033191A1

公开(公告)日：2017-02-02

申请号：US15216889

申请日：2016-07-22

Applicant: Infineon Technologies AG

Inventor： Andreas MEISER ,  Oliver HAEBERLEN

IPC: H01L29/40 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/408 ,  H01L21/31155 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7825

Abstract: A semiconductor device is provided that includes a transistor in a semiconductor body having a main surface. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The body region and the drift zone are disposed along a first direction between the source region and the drain region. The first direction is parallel to the main surface. The semiconductor device further includes a field plate disposed in field plate trenches extending along the first direction in the drift zone, and a field dielectric layer between the field plate and the drift zone. A thickness of the field dielectric layer gradually increases along the first direction from a portion adjacent to the source region to a portion adjacent to the drain region.

Abstract translation: 提供一种半导体器件，其包括具有主表面的半导体主体中的晶体管。 晶体管包括源区域，漏极区域，体区域，漂移区域和在体区域处的栅电极。 主体区域和漂移区域沿着源极区域和漏极区域之间的第一方向设置。 第一个方向平行于主表面。 半导体器件还包括设置在沿漂移区中的第一方向延伸的场板沟槽中的场板和场板与漂移区之间的场介电层。 场介电层的厚度沿着第一方向从与源极区相邻的部分逐渐增加到与漏极区相邻的部分。

公开(公告)号：US20200044036A1

公开(公告)日：2020-02-06

申请号：US16601921

申请日：2019-10-15

Applicant: Infineon Technologies AG

Inventor： Andreas MEISER ,  Oliver HAEBERLEN

IPC: H01L29/40 ,  H01L21/3115 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78

Abstract: A semiconductor device includes a transistor in a semiconductor body having a main surface. The transistor includes a source region; a drain region; a body region; a drift zone; a gate electrode at the body region, the body region and the drift zone being disposed along a first direction between the source region and the drain region, and the first direction being parallel to the main surface; a field plate disposed in each of a plurality of field plate trenches, each of the field plate trenches having a longitudinal axis extending along the first direction; and a field dielectric layer between the field plate and the drift zone, a thickness of the field dielectric layer at a bottom of each of the field plate trenches gradually increases along the first direction, the thickness being measured along a depth direction of the plurality of field plate trenches.

公开(公告)号：US20170278762A1

公开(公告)日：2017-09-28

申请号：US15468045

申请日：2017-03-23

Applicant: Infineon Technologies AG

Inventor： Angela KESSLER ,  Oliver HAEBERLEN ,  Matteo-Alessandro KUTSCHAK ,  Ralf OTREMBA ,  Petteri PALM ,  Boris PLIKAT ,  Thorsten SCHARF ,  Klaus SCHIESS ,  Fabian SCHNOY ,  Erich SYRI

IPC: H01L21/66 ,  H01L23/498 ,  G01N21/84 ,  H01L23/31

CPC classification number: H01L22/32 ,  G01N21/84 ,  G01N21/95684 ,  G01N2201/12 ,  H01L22/12 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49861 ,  H01L23/49866 ,  H01L24/24 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/24246 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/052 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/1033

Abstract: A package comprising an electronic chip, a laminate type encapsulant in and/or on which the electronic chip is mounted, a solderable electric contact on a solder surface of the package, and a solder flow path on and/or in the package which is configured so that, upon soldering the electric contact with a mounting base, part of solder material flows along the solder flow path towards a surface of the package at which the solder material is optically inspectable after completion of the solder connection between the mounting base and the electric contact.