SEMICONDUCTOR DEVICES INCLUDING PARALLEL ELECTRICALLY CONDUCTIVE LAYERS

    公开(公告)号:US20210287964A1

    公开(公告)日:2021-09-16

    申请号:US17196652

    申请日:2021-03-09

    Abstract: A semiconductor device is disclosed. In one example, the semiconductor device includes a semiconductor chip including a first chip contact pad on a first chip main surface. The semiconductor device further includes a first electrically conductive layer arranged over the first chip main surface and electrically coupled to the first chip contact pad, wherein the first electrically conductive layer extends in a direction parallel to the first chip main surface. An electrical through connection is electrically coupled to the first electrically conductive layer and to a second electrically conductive layer, wherein the electrical through connection extends in a direction perpendicular to the first chip main surface, and wherein, in a top view of the first chip main surface, the electrical through connection and the semiconductor chip are non-overlapping.

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