公开(公告)号：US11886116B2

公开(公告)日：2024-01-30

申请号：US17307223

申请日：2021-05-04

Applicant: Inpria Corporation

Inventor： Peter de Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/11 ,  G03F7/00 ,  G03F7/038 ,  G03F7/42 ,  G03F7/004 ,  G03F1/48 ,  G03F1/22

CPC classification number: G03F7/0392 ,  G03F1/22 ,  G03F1/48 ,  G03F7/0017 ,  G03F7/0042 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US20210349390A1

公开(公告)日：2021-11-11

申请号：US17307223

申请日：2021-05-04

Applicant: Inpria Corporation

Inventor： Peter de Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/11 ,  G03F7/038 ,  G03F7/004 ,  G03F1/48 ,  G03F7/00 ,  G03F1/22 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US11480874B2

公开(公告)日：2022-10-25

申请号：US16654080

申请日：2019-10-16

Applicant: Inpria Corporation

Inventor： Michael Kocsis ,  Peter De Schepper ,  Michael Greer ,  Shu-Hao Chang

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/42 ,  G03F7/40

Abstract: A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.

公开(公告)号：US20210011383A1

公开(公告)日：2021-01-14

申请号：US16926125

申请日：2020-07-10

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Shu-Hao Chang ,  Jason K. Stowers ,  Michael Kocsis ,  Peter de Schepper

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A method is described for stabilizing organometallic coating interfaces through the use of multilayer structures that incorporate an underlayer coating. The underlayer is composed of an organic polymer that has crosslinking and adhesion-promoting functional groups. The underlayer composition may include photoacid generators. Multilayer structures for patterning are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo hydroxo compositions, which are placed over a polymer underlayer.

公开(公告)号：US20240118614A1

公开(公告)日：2024-04-11

申请号：US18389961

申请日：2023-12-20

Applicant: Inpria Corporation

Inventor： Peter De Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F1/22 ,  G03F1/48 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20 ,  G03F7/42

CPC classification number: G03F7/0392 ,  G03F1/22 ,  G03F1/48 ,  G03F7/0017 ,  G03F7/0042 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US20230012169A1

公开(公告)日：2023-01-12

申请号：US17940244

申请日：2022-09-08

Applicant: Inpria Corporation

Inventor： Michael Kocsis ,  Peter De Schepper ,  Michael Greer ,  Shu-Hao Chang

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/42 ,  G03F7/40

Abstract: A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.

公开(公告)号：US20200326627A1

公开(公告)日：2020-10-15

申请号：US16845511

申请日：2020-04-10

Applicant: Inpria Corporation

Inventor： Kai Jiang ,  Brian J. Cardineau ,  Lauren B. McQuade ,  Jeremy T. Anderson ,  Stephen T. Meyers ,  Michael Kocsis ,  Amrit K. Narasimhan

IPC: G03F7/32 ,  G03F7/42 ,  G03F7/20 ,  G03F7/40 ,  G03F7/16

Abstract: Developer compositions are described based on blends of solvents, in which the developers are particularly effective for EUV patterning using organometallic based patterning compositions. Methods for use of these developing compositions are described. The blends of solvents can be selected based on Hansen solubility parameters. Generally, one solvent has low polarity as express by the sum of δP+δH, and a second solvent component of the developer has a higher value of δP+δH. Corresponding solvent compositions are described.