-
公开(公告)号：US10749501B2
公开(公告)日：2020-08-18
申请号：US16196165
申请日：2018-11-20
Applicant: Integrated Device Technology, Inc.
Inventor： Hojung Ju , Roberto Aparicio Joo
Abstract: An apparatus comprises a first RF port, a second RF port, a first resonator circuit and at least one second resonator circuit. The first resonator circuit and the second resonator circuit may be connected between the first RF port and the second RF port. The first resonator circuit may comprise a first inductor, a first capacitor, and a first stacked switch device. The second resonator circuit may comprise a second inductor, a second capacitor, and a second stacked switch device. The first capacitor and the first stacked switch device may be coupled in series across the first inductor. The second capacitor, the second inductor, and the second stacked switch device may be connected in parallel.
-
公开(公告)号：US20190356279A1
公开(公告)日：2019-11-21
申请号：US16226844
申请日：2018-12-20
Applicant: Integrated Device Technology, Inc.
Inventor： Victor Korol , Roberto Aparicio Joo
Abstract: An apparatus includes an amplifier circuit and a protection circuit. The amplifier circuit may be configured to generate an output signal by amplifying an input signal received at an input port. The input signal may be a radio-frequency signal. The protection circuit may be configured to (i) generate a detection signal by detecting when a level of the input signal exceeds a corresponding threshold, where the level is a power level, a voltage level or both, (ii) route the input signal away from the input port of the amplifier circuit and disable the amplifier circuit both in response to the detection signal being continuously active at least a first time duration and (iii) route the input signal to the input port of the amplifier circuit and enable the amplifier circuit both in response to the detection signal being continuously inactive at least a second time duration.
-
公开(公告)号：US20190158066A1
公开(公告)日：2019-05-23
申请号：US16196165
申请日：2018-11-20
Applicant: Integrated Device Technology, Inc.
Inventor： Hojung Ju , Roberto Aparicio Joo
Abstract: An apparatus comprises a first RF port, a second RF port, a first resonator circuit and at least one second resonator circuit. The first resonator circuit and the second resonator circuit may be connected between the first RF port and the second RF port. The first resonator circuit may comprise a first inductor, a first capacitor, and a first stacked switch device. The second resonator circuit may comprise a second inductor, a second capacitor, and a second stacked switch device. The first capacitor and the first stacked switch device may be coupled in series across the first inductor. The second capacitor, the second inductor, and the second stacked switch device may be connected in parallel.
-
公开(公告)号：US10672877B2
公开(公告)日：2020-06-02
申请号：US16267840
申请日：2019-02-05
Applicant: Integrated Device Technology, Inc.
Inventor： Roberto Aparicio Joo , Shawn Bawell
IPC: H01L29/417 , H01L27/088 , H01L29/08 , H01L29/423 , H01L27/12 , H01L29/40 , H03K17/16 , H01L23/522 , H04B1/48 , H01L29/66 , H01L29/78
Abstract: An apparatus includes one or more field effect transistors configured as a switch. Each of the one or more field effect transistors comprises one or more source diffusions, one or more drain diffusions, and one or more gate fingers. Each of the one or more gate fingers is disposed between a source diffusion and a drain diffusion. A first electrical connection to the one or more source diffusions is made using one or more source electrodes that extend from a first end for a first length along a long axis of the source diffusions. A second electrical connection to the one or more drain diffusions is made using one or more drain electrodes that extend from a second end for a second length along a long axis of the drain diffusions. The first length of the one or more source electrodes and the second length of the one or more drain electrodes are generally selected to avoid juxtaposition of the one or more source electrodes and the one or more drain electrodes.
-
公开(公告)号：US20200169248A1
公开(公告)日：2020-05-28
申请号：US16778198
申请日：2020-01-31
Applicant: Integrated Device Technology, Inc.
Inventor： Hojung Ju , Roberto Aparicio Joo
IPC: H03H11/06 , H04B1/48 , H03H11/34 , H03K17/10 , H03K17/041
Abstract: An apparatus comprises a first series switch, a second series switch, a first shunt switch, a second shunt switch, a first DC blocking capacitor, and a second DC blocking capacitor. The first series switch may be coupled between a first RF port and a second RF port. The first shunt switch may be coupled between the first RF port and a first half supply voltage tab. The second series switch may be coupled between the second RF port and a third RF port. The second shunt switch may be coupled between the third RF port and a second half supply voltage tab. The first DC blocking capacitor may be coupled between the first half voltage tab and a circuit ground potential. The second DC blocking capacitor may be coupled between the second half supply voltage tab and the circuit ground potential.
-
Patent Agency Ranking
公开(公告)号：US10404216B2
公开(公告)日：2019-09-03
申请号：US15887013
申请日：2018-02-02
Applicant: Integrated Device Technology, Inc.
Inventor： Victor Korol , Roberto Aparicio Joo , Mohsin Asif , Shawn Bawell
Abstract: An apparatus comprises an amplifier having a predefined linear range and a shunt load. The shunt load may be connected to an output, an input, or between gain stages of the amplifier. An impedance of the shunt load dynamically varies in response to a level of a signal presented at a node formed by interconnection of the shunt load and the amplifier, extending linearity of the amplifier beyond the predefined range.
-
公开(公告)号：US11271566B2
公开(公告)日：2022-03-08
申请号：US16220399
申请日：2018-12-14
Applicant: Integrated Device Technology, Inc.
Inventor： Victor Korol , Roberto Aparicio Joo
IPC: H01L21/8252 , H03K19/094 , H01L23/31 , H01L23/532 , H02P9/30
Abstract: An apparatus includes a device comprising a semiconductor junction configured to generate a reference voltage, a voltage divider circuit, a comparator circuit, and a first output circuit. The voltage divider circuit may be configured to generate a first predetermined threshold voltage in response to the reference voltage. The comparator circuit may be configured to generate a first intermediate signal in response to a comparison of the first predetermined threshold voltage and an input signal. The first output circuit may be configured to generate a first output signal in response to the first intermediate signal.
-
公开(公告)号：US10511344B1
公开(公告)日：2019-12-17
申请号：US16229542
申请日：2018-12-21
Applicant: Integrated Device Technology, Inc.
Inventor： Victor Korol , Hui Li , Roberto Aparicio Joo , Naveen Yanduru
Abstract: An apparatus comprises an input port, an output port, and a resonant receive switch circuit. The resonant receive switch circuit may be coupled between the input port and the output port. The resonant receive switch circuit may comprise a first switch, a second switch, and an input matching circuit. When the first and the second switches are in a non-conducting state, a signal at the input port is passed to the output port. When the first and the second switches are in a conducting state, the signal at the input port is prevented from reaching the output port.
-
公开(公告)号：US20190245048A1
公开(公告)日：2019-08-08
申请号：US16267840
申请日：2019-02-05
Applicant: Integrated Device Technology, Inc.
Inventor： Roberto Aparicio Joo , Shawn Bawell
IPC: H01L29/417 , H01L27/088 , H01L29/08 , H01L29/423 , H01L27/12 , H01L29/66 , H01L29/40 , H03K17/16 , H01L23/522 , H04B1/48
Abstract: An apparatus includes one or more field effect transistors configured as a switch. Each of the one or more field effect transistors comprises one or more source diffusions, one or more drain diffusions, and one or more gate fingers. Each of the one or more gate fingers is disposed between a source diffusion and a drain diffusion. A first electrical connection to the one or more source diffusions is made using one or more source electrodes that extend from a first end for a first length along a long axis of the source diffusions. A second electrical connection to the one or more drain diffusions is made using one or more drain electrodes that extend from a second end for a second length along a long axis of the drain diffusions. The first length of the one or more source electrodes and the second length of the one or more drain electrodes are generally selected to avoid juxtaposition of the one or more source electrodes and the one or more drain electrodes.
-
公开(公告)号：US20190089319A1
公开(公告)日：2019-03-21
申请号：US16105026
申请日：2018-08-20
Applicant: Integrated Device Technology, Inc.
Inventor： Victor Korol , Roberto Aparicio Joo
CPC classification number: H03G3/3068 , H03F1/083 , H03F3/193 , H03F3/72 , H03F2200/211 , H03F2200/451 , H03G1/0029 , H03G1/0088 , H03G3/3036 , H03G3/3042 , H03G3/3063 , H03G2201/307 , H03M1/124 , H03M1/14
Abstract: An apparatus includes an amplifier and a gain control circuit. The amplifier may be configured to provide multiple gain steps. The gain control circuit may be configured to provide fast and precise changes between the multiple gain steps of the amplifier. The gain control circuit may be further configured to change an impedance of the amplifier to switch between the gain steps. The gain control circuit may be further configured to compensate for changes in frequency response related to changing the impedance. The gain control circuit may be further configured to inject a complementary charge to an input of the amplifier to correct a bias voltage deviation and a transient caused by the gain control circuit.
-
-
-
-
-
-
-
-
-
Search Results
16
records
(took 0.018 seconds)
