METHOD AND APPARATUS FOR MANAGING A SPIN TRANSFER TORQUE MEMORY
    1.
    发明申请
    METHOD AND APPARATUS FOR MANAGING A SPIN TRANSFER TORQUE MEMORY 有权
    用于管理转子转子记忆体的方法和装置

    公开(公告)号:US20150278011A1

    公开(公告)日:2015-10-01

    申请号:US14228555

    申请日:2014-03-28

    CPC classification number: G06F11/106 G06F11/1016 G06F2212/68

    Abstract: An apparatus and method for scrubbing spin transfer torque (STT) memory. For example, one embodiment of a apparatus comprises: a memory subsystem including at least one spin transfer torque (STT) memory, the STT memory arranged into one or more entries; and a scrub engine to ensure that the entries of the STT contain valid data, the scrub engine including analysis and processing logic to determine, for each entry, whether a specified scrubbing interval has expired and, if so, then to invalidate the entry or re-fetch data for the entry from a source and, if the scrubbing interval has not expired, then to perform error detection and/or correction on the entry.

    Abstract translation: 一种用于清洗自旋转移转矩(STT)存储器的装置和方法。 例如,设备的一个实施例包括:存储器子系统,其包括至少一个自旋转移转矩(STT)存储器,STT存储器被布置成一个或多个条目; 以及擦除引擎,以确保STT的条目包含有效数据,擦洗引擎包括分析和处理逻辑,以确定每个条目是否指定的擦除间隔已过期,如果是,则使该条目或重新生效 - 从源中获取条目的数据,如果擦除间隔尚未过期,则对条目执行错误检测和/或更正。

    MAGNETIC STORAGE CELL MEMORY WITH BACK HOP-PREVENTION
    2.
    发明申请
    MAGNETIC STORAGE CELL MEMORY WITH BACK HOP-PREVENTION 有权
    具有背部预防的磁性存储单元存储器

    公开(公告)号:US20160379700A1

    公开(公告)日:2016-12-29

    申请号:US14751801

    申请日:2015-06-26

    Abstract: An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.

    Abstract translation: 描述了一种包括具有电阻存储单元的半导体芯片存储器阵列的装置。 该装置还包括比较器,用于将写入阵列的第一个字与存储在阵列中的第二个字进行比较,该第二个字由写入操作所指向的位置将第一个字写入数组。 该装置还包括用于迭代地写入一个或多个比特位置的电路​​,其中在每个连续的迭代中随着写入电流强度的增加而在第一个字和第二个字之间存在差异。

    WRITE OPERATIONS IN SPIN TRANSFER TORQUE MEMORY
    4.
    发明申请
    WRITE OPERATIONS IN SPIN TRANSFER TORQUE MEMORY 有权
    旋转转矩记忆中的写操作

    公开(公告)号:US20160180909A1

    公开(公告)日:2016-06-23

    申请号:US14580141

    申请日:2014-12-22

    Inventor: HELIA NAEIMI

    Abstract: Apparatus, systems, and methods for write operations in spin transfer torque (STT) memory are described. In one embodiment, a memory comprises at least one spin-transfer torque (STT) memory device, temperature sensor proximate the STT memory device and a controller comprising logic, at least partially including hardware logic, to monitor an output of the temperature sensor, implement a first write operation protocol when the output of the temperature sensor fails to exceed a threshold temperature, and implement a second write operation protocol when the output of the temperature sensor exceeds the threshold temperature. Other embodiments are also disclosed and claimed.

    Abstract translation: 描述了自旋转矩(STT)存储器中的写入操作的装置,系统和方法。 在一个实施例中,存储器包括至少一个自旋传递转矩(STT)存储器件,靠近STT存储器件的温度传感器和包括至少部分地包括硬件逻辑的逻辑的控制器,以监视温度传感器的输出,实现 当温度传感器的输出不能超过阈值温度时的第一写操作协议,并且当温度传感器的输出超过阈值温度时实施第二写操作协议。 还公开并要求保护其他实施例。

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