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    APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY
    2.
    发明申请
    APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY 审中-公开

    公开(公告)号：US20200020378A1

    公开(公告)日：2020-01-16

    申请号：US16565299

    申请日：2019-09-09

    Applicant: Intel Corporation

    Inventor： Liqiong WEI ,  Fatih HAMZAOGLU ,  Yih WANG ,  Nathaniel J. AUGUST ,  Blake C. LIN ,  Cyrille DRAY

    IPC: G11C11/16 ,  G11C13/00 ,  G11C29/02

    Abstract: Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

    APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY
    4.
    发明申请
    APPARATUS FOR LOW POWER WRITE AND READ OPERATIONS FOR RESISTIVE MEMORY 审中-公开
    低电力写入和电容式存储器读操作的装置

    公开(公告)号：US20160125927A1

    公开(公告)日：2016-05-05

    申请号：US14129277

    申请日：2013-06-28

    Applicant: Intel Corporation

    Inventor： Liqiong WEI ,  Fatih HAMZAOGLU ,  Yih WANG ,  Nathaniel J. AUGUST ,  Blake C. LIN ,  Cyrille DRAY

    IPC: G11C11/16 ,  G11C13/00

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1677 ,  G11C11/1693 ,  G11C13/00 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C2013/0071 ,  G11C2013/0076 ,  G11C2213/74 ,  G11C2213/79

    Abstract: Described are apparatuses for improving resistive memory energy efficiency. An apparatus performs data-driven write to make use of asymmetric write switch energy between write0 and write1 operations. The apparatus comprises: a resistive memory cell coupled to a bit line and a select line; a first pass-gate coupled to the bit line; a second pass-gate coupled to the select line; and a multiplexer operable by input data, the multiplexer to provide a control signal to the first and second pass-gates or to write drivers according to logic level of the input data. An apparatus comprises circuit for performing read before write operation which avoids unnecessary writes with an initial low power read operation. An apparatus comprises circuit to perform self-controlled write operation which stops the write operation as soon as bit-cell flips. An apparatus comprises circuit for performing self-controlled read operation which stops read operation as soon as data is detected.

    Abstract translation: 描述了用于提高电阻式存储器能量效率的装置。 一种装置执行数据驱动写入，以利用write0和write1操作之间的非对称写入开关能量。 该装置包括：耦合到位线和选择线的电阻存储器单元; 耦合到位线的第一通过栅极; 耦合到所述选择线的第二通过栅极; 以及可由输入数据操作的多路复用器，用于根据输入数据的逻辑电平向第一和第二传递门提供控制信号或写入驱动器。 一种装置包括用于在写入操作之前执行读取的电路，其避免了利用初始低功率读取操作的不必要的写入。 一种装置包括执行自动写入操作的电路，其一旦位单元翻转就停止写入操作。 一种装置包括用于执行自动读取操作的电路，其在检测到数据时停止读取操作。

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