公开(公告)号：US11482433B2

公开(公告)日：2022-10-25

申请号：US16932594

申请日：2020-07-17

Applicant: Intel Corporation

Inventor： Ashutosh Sagar ,  Chao-Kai Liang ,  Miye Hopkins ,  Weimin Han ,  Robert James

IPC: H01L21/67 ,  H05B6/70 ,  H01L21/677

Abstract: Stacked thermal process chamber module for remote radiative heating of semiconductor device workpieces. A stacked thermal process module may include a stack of thermal process chambers and one or more generators of electromagnetic radiation. The electromagnetic radiation may be transported from a generator remote from the process chambers through one or more waveguides, thereby minimizing the volume and/or cleanroom footprint of the stacked thermal process chamber module. A waveguide may terminate in a process chamber so that electromagnetic radiation delivered during a thermal process may be coupled into one or more materials of the workpiece. The radiative heating process may overcome many of the limitations of thermal process chambers that instead employ a local heat source located within a process chamber.

公开(公告)号：US10170314B2

公开(公告)日：2019-01-01

申请号：US15246468

申请日：2016-08-24

Applicant: Intel Corporation

Inventor： Jacob Jensen ,  Tahir Ghani ,  Mark Y. Liu ,  Harold Kennel ,  Robert James

IPC: H01L21/268 ,  H01L29/417 ,  H01L21/265 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L21/324

Abstract: A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack disposed there between. The raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth. The super-activated dopant region has a higher activated dopant concentration than the activated dopant region and/or has an activated dopant concentration that is constant throughout the melt region. A fin is formed on a substrate and a semiconductor material or a semiconductor material stack is deposited on regions of the fin disposed on opposite sides of a channel region to form raised source/drains. A pulsed laser anneal is performed to melt only a portion of the deposited semiconductor material above a melt depth.

公开(公告)号：US09443980B2

公开(公告)日：2016-09-13

申请号：US14667544

申请日：2015-03-24

Applicant: Intel Corporation

Inventor： Jacob Jensen ,  Tahir Ghani ,  Mark Y. Liu ,  Harold Kennel ,  Robert James

IPC: H01L29/78 ,  H01L21/268 ,  H01L29/66 ,  H01L21/265 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/417

CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L21/268 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66628 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack disposed there between. The raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth. The super-activated dopant region has a higher activated dopant concentration than the activated dopant region and/or has an activated dopant concentration that is constant throughout the melt region. A fin is formed on a substrate and a semiconductor material or a semiconductor material stack is deposited on regions of the fin disposed on opposite sides of a channel region to form raised source/drains. A pulsed laser anneal is performed to melt only a portion of the deposited semiconductor material above a melt depth.

公开(公告)号：US20220020613A1

公开(公告)日：2022-01-20

申请号：US16932594

申请日：2020-07-17

Applicant: Intel Corporation

Inventor： Ashutosh Sagar ,  Chao-Kai Liang ,  Miye Hopkins ,  Weimin Han ,  Robert James

IPC: H01L21/67 ,  H05B6/70

Abstract: Stacked thermal process chamber module for remote radiative heating of semiconductor device workpieces. A stacked thermal process module may include a stack of thermal process chambers and one or more generators of electromagnetic radiation. The electromagnetic radiation may be transported from a generator remote from the process chambers through one or more waveguides, thereby minimizing the volume and/or cleanroom footprint of the stacked thermal process chamber module. A waveguide may terminate in a process chamber so that electromagnetic radiation delivered during a thermal process may be coupled into one or more materials of the workpiece. The radiative heating process may overcome many of the limitations of thermal process chambers that instead employ a local heat source located within a process chamber.