摘要:
A ferromagnetic thin-film based digital memory having a substrate formed of a base supporting an electrically insulating material primary substrate layer in turn supporting a plurality of current control devices each having an interconnection arrangement with each of said plurality of current control devices being separated from one another by spacer material therebetween and being electrically interconnected with information storage and retrieval circuitry. A plurality of bit structures are each supported on and electrically connected to a said interconnection arrangement of a corresponding one of said plurality of current control devices and have magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained of which two are separated by at least one intermediate layer of a nonmagnetic material having two major surfaces on opposite sides thereof. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection arrangement supporting that bit structure. Sufficient electrical current selectively drawn through each of these bit structures as interconnected can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.
摘要:
A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto. Sufficient electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.
摘要:
A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.
摘要:
A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.
摘要:
A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.
摘要:
A tamper detecting enclosure arrangement for enclosures containing an interior space in which a protected item is positioned having a magnetoresistive sensing memory storage cell positioned in or near the protected item in the enclosure having a two state offset magnetoresistance versus externally applied magnetic field. A magnet is positioned at a selected separation distance from the magnetoresistive sensing memory storage cell to thereby provide a magnetic field about the magnetoresistive sensing memory storage cell if said enclosure has not been opened in such a manner as to result in substantially increasing said separation distance.
摘要:
A computer based human capital management system provides for collecting information from any combination of position applicants, employees, and reserve pool talent reflective of the position skills, performance, and requirements thereof. The quality of the collected information can be normalized by supervisory review. The collected information is searchable by skill, performance, and other requirements with the search results being scored and ranked. The collected information may also be evaluated against a position specification establishing a weighting profile reflective of a position skills, performance, and requirements set presumed appropriate for a defined position. The position evaluation returns a scored and ranked list of candidates for the defined position, which can then be subjected to managerial review. Additional information can be requested as part of the managerial review, leading to a potential revision in the scored and ranked list of candidates.
摘要:
A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.
摘要:
A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to and spaced apart from one another so they are electrically isolated with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. The substrate can include a monolithic integrated circuit structure containing electronic circuit components of which at least one is electrically connected to the first input conductor. A similar second current sensor can be individually formed, but can also be in the current determiner structure that is supported on the substrate along with a second input conductor supported on the substrate suited for conducting input currents therethrough. This second input conductor is positioned at that side of the second current sensor opposite to that side thereof facing the substrate so as to be adjacent to, yet spaced apart from, the second current sensor to thereby be electrically isolated from any direct circuit interconnection therewith on the substrate but to have the second current sensor positioned in those magnetic fields arising from the input currents in the second input conductor. In addition, a second shield/concentrator layer of material exhibiting a substantial magnetic permeability to serve as a magnetic field concentrator is positioned at that side of the second input conductor opposite to that side thereof facing the substrate. In the first instance, the second shield/concentrator layer is electrically connected to the second input conductor, and can be so connected in the second instance.
摘要:
A configuration where a wide range of current can be sensed accurately in spite of using a magnetic material with non-linearities and limited hysteresis. This configuration includes: a strip line current carrier, an IC chip containing a GMR sensor element, an integrated drive coil, like an isoloop. Field produced by current in the strip line is detected by the sensor. Feedback field is produced by current in an on-chip coil to counteract spurious fields from the strip line.