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公开(公告)号:US11521990B2
公开(公告)日:2022-12-06
申请号:US17336620
申请日:2021-06-02
Applicant: Japan Display Inc.
Inventor: Isao Suzumura , Kazufumi Watabe , Yoshinori Ishii , Hidekazu Miyake , Yohei Yamaguchi
IPC: H01L27/12 , H01L27/32 , H01L29/786 , H01L29/51 , H01L29/24 , G02F1/1368 , G02F1/133 , G02F1/1362 , H01L29/417 , H01L29/423 , H01L29/49
Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
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公开(公告)号:US20210141256A1
公开(公告)日:2021-05-13
申请号:US17126112
申请日:2020-12-18
Applicant: Japan Display Inc.
Inventor: Yohei YAMAGUCHI , Arichika Ishida , Hidekazu Miyake , Hiroto Miyake , Isao Suzumura
IPC: G02F1/1368 , G02F1/1362 , H01L27/12 , H01L29/786 , G02F1/1343
Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
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公开(公告)号:US10833134B2
公开(公告)日:2020-11-10
申请号:US16715008
申请日:2019-12-16
Applicant: Japan Display Inc.
Inventor: Hidekazu Miyake , Kazufumi Watabe , Yoshinori Ishii
Abstract: An EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and an EL element having an anode, a luminous layer and a cathode. A protective film covers the scanning line, the video signal line and the EL element. A touch panel detection electrode is disposed above the protective film, and connected to a wiring which is disposed under the protective film via a through hole of the protective film. The touch panel detection electrode has an angle to intersect with the video signal line.
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公开(公告)号:US10361229B2
公开(公告)日:2019-07-23
申请号:US16004546
申请日:2018-06-11
Applicant: Japan Display Inc.
Inventor: Yohei Yamaguchi , Isao Suzumura , Hidekazu Miyake
IPC: H01L27/12 , H01L27/32 , H01L29/786 , G02F1/1362 , G02F1/1368
Abstract: The invention allows formation of LTPS TFTs and TAOS TFTs on the same substrate. The invention provides a display device including a substrate having a display area in which pixels are formed. The pixels include a first TFT made of a TAOS. The drain of the first TFT is formed of first LTPS 112. The source of the first TFT is formed of second LTPS 113. The first LTPS 112 is connected to a first electrode 106 via a first through-hole 108 formed in an insulating film 105 covering the first TFT. The second LTPS 113 is connected to a second electrode 107 via a second through-hole 108 formed in the insulating film 105 covering the first TFT.
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公开(公告)号:US09947798B2
公开(公告)日:2018-04-17
申请号:US14804395
申请日:2015-07-21
Applicant: Japan Display Inc.
Inventor: Hidekazu Miyake , Arichika Ishida , Norihiro Uemura , Hiroto Miyake , Isao Suzumura , Yohei Yamaguchi
IPC: G02F1/136 , H01L29/786 , H01L27/12 , H01L29/24 , H01L29/66 , G02F1/1368
CPC classification number: H01L29/7869 , G02F1/1368 , G02F2001/13685 , G02F2202/104 , H01L27/1218 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78696
Abstract: According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.
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公开(公告)号:US09618813B2
公开(公告)日:2017-04-11
申请号:US14990201
申请日:2016-01-07
Applicant: Japan Display Inc.
Inventor: Yohei Yamaguchi , Arichika Ishida , Hidekazu Miyake , Hiroto Miyake , Isao Suzumura
IPC: G02F1/1362 , H01L29/786 , H01L27/12 , G02F1/1368
CPC classification number: G02F1/1368 , G02F1/134309 , G02F1/13439 , G02F1/136209 , G02F1/136227 , G02F2001/136218 , G02F2001/13685 , G02F2202/10 , H01L27/1225 , H01L29/42384 , H01L29/78633 , H01L29/7869
Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.
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公开(公告)号:US09496292B2
公开(公告)日:2016-11-15
申请号:US13915671
申请日:2013-06-12
Applicant: Japan Display Inc.
Inventor: Hidekazu Miyake , Norihiro Uemura , Takeshi Noda , Isao Suzumura , Toshiki Kaneko
CPC classification number: H01L27/1244 , H01L27/1225 , H01L27/1288 , H01L27/3244
Abstract: The present invention provides a display device having: gate electrodes formed on a transparent substrate; a gate insulating film for covering the gate electrodes; an oxide semiconductor formed on the gate insulating film; drain electrodes and source electrodes formed at a distance from each other with channel regions of the oxide semiconductor in between; an interlayer capacitor film for covering the drain electrodes and source electrodes; common electrodes formed on top of the interlayer capacitor film; and pixel electrodes formed so as to face the common electrodes, and wherein an etching stopper layer for covering the channel regions is formed between the oxide semiconductor and the drain electrodes and source electrodes, the drain electrodes are a multilayer film where a transparent conductive film and a metal film are layered on top of each other, and the drain electrodes and source electrodes make direct contact with the oxide semiconductor.
Abstract translation: 本发明提供一种显示装置,具有:形成在透明基板上的栅电极; 用于覆盖栅电极的栅极绝缘膜; 形成在栅极绝缘膜上的氧化物半导体; 漏电极和源极之间形成有一定距离的氧化物半导体的沟道区; 用于覆盖漏电极和源电极的层间电容膜; 公共电极形成在层间电容器膜的顶部; 以及形成为与公共电极相对的像素电极,并且其中在氧化物半导体与漏电极和源电极之间形成用于覆盖沟道区的蚀刻停止层,漏电极是多层膜,其中透明导电膜和 金属膜层叠在一起,漏电极和源电极与氧化物半导体直接接触。
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公开(公告)号:US20160012782A1
公开(公告)日:2016-01-14
申请号:US14793106
申请日:2015-07-07
Applicant: Japan Display Inc.
Inventor: Isao SUZUMURA , Arichika Ishida , Norihiro Uemura , Hidekazu Miyake , Hiroto Miyake , Yohei Yamaguchi
IPC: G09G3/36
CPC classification number: G02F1/1368 , G02F1/133345 , G02F1/136227 , H01L27/1288
Abstract: According to one embodiment, a display device includes a TFT on an insulating substrate. The TFT includes a gate electrode, an insulating layer on the gate electrode, a semiconductor layer on the insulating layer, and a source electrode and a drain electrode each provided in contact with at least a part of the semiconductor layer. The source and drain electrodes have a laminated structure including a lower layer, an intermediate layer and an upper layer. The source and drain electrodes include sidewalls each including a first tapered portion on the upper layer side, a second tapered portion on the lower layer side and a sidewall protective film attached to the second tapered portion. The taper angle of the first tapered portion is smaller than that of the second tapered portion.
Abstract translation: 根据一个实施例,显示装置包括在绝缘基板上的TFT。 TFT包括栅极电极,栅电极上的绝缘层,绝缘层上的半导体层,以及各自设置成与半导体层的至少一部分接触的源电极和漏电极。 源电极和漏电极具有包括下层,中间层和上层的层压结构。 源电极和漏电极包括侧壁,其各自包括上层侧的第一锥形部分,下层侧上的第二锥形部分和附接到第二锥形部分的侧壁保护膜。 第一锥形部的锥角小于第二锥形部的锥角。
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公开(公告)号:US20210288078A1
公开(公告)日:2021-09-16
申请号:US17336620
申请日:2021-06-02
Applicant: Japan Display Inc.
Inventor: Isao Suzumura , Kazufumi Watabe , Yoshinori Ishii , Hidekazu Miyake , Yohei Yamaguchi
IPC: H01L27/12 , H01L29/786 , H01L29/51 , H01L29/24 , G02F1/1368 , G02F1/133 , G02F1/1362 , H01L29/417 , H01L29/423 , H01L29/49
Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
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公开(公告)号:US10573666B2
公开(公告)日:2020-02-25
申请号:US16011725
申请日:2018-06-19
Applicant: Japan Display Inc.
Inventor: Isao Suzumura , Kazufumi Watabe , Yoshinori Ishii , Hidekazu Miyake , Yohei Yamaguchi
IPC: H01L27/12 , H01L29/786 , H01L29/51 , H01L29/24 , G02F1/1368 , G02F1/133 , G02F1/1362 , H01L29/417 , H01L29/423 , H01L29/49 , H01L27/32
Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
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