摘要:
The invention concerns a semiconductor optical amplifier. The optical guide structure of this amplifier comprises a rectangular cross-section active stripe (12). Its material is homogeneous and it is subjected to a tensile strain sufficient to render the amplifier insensitive to the polarisation of the light to be amplified.The invention finds an application in optical telecommunications.
摘要:
Embodiments herein relate to an apparatus for use in a hybrid laser. The apparatus may include a silicon substrate and a waveguide to facilitate transmission of an optical signal in a first direction that is orthogonal to a surface of the silicon substrate. The apparatus may further include a metal shunt that is less than or equal to 10 micrometers from the waveguide in a second direction that is orthogonal to the surface of the silicon substrate and orthogonal to the first direction. Other embodiments may be described and/or claimed.
摘要:
An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.
摘要:
There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.
摘要:
The invention concerns an optical waveguide transition and its fabrication method, enabling coupling between a buried optical waveguide and a ridged optical waveguide. The transition structure is formed during etching of a layer containing the buried optical waveguide, the transition area being formed by adiabatically increasing the lateral dimensions of the buried waveguide. Top layers are deposited on the buried waveguide and its widened structure in the transition area, and the ridged optical waveguide is fabricated with one part on top of the transition area. Coupling of the respective propagation modes in the buried and ridged waveguides is effected by mode adaptation in the region between the two waveguide structures in the transition area. The transition of the invention is made in two conventional epitaxy steps.
摘要:
Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.
摘要:
In a laser device, notably for optical pumping, the wafer includes an expansion segment adjacent the exit to prevent degradation of the exit facet of the semiconductor wafer that constitutes the amplifying part of the laser. The other facet is reflective and a Bragg grating is formed in a coupling fiber disposed near the exit facet. Applications include optical pumping of erbium-doped fiber amplifiers.
摘要:
Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical amplifier (SOA) may be positioned in a signal pathway between the optical port and the transmit module or the receive module. Other embodiments may be described and/or claimed.
摘要:
An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.
摘要:
The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile.