Semiconductor optical amplifier
    1.
    发明授权
    Semiconductor optical amplifier 失效
    半导体光放大器

    公开(公告)号:US5982531A

    公开(公告)日:1999-11-09

    申请号:US945589

    申请日:1997-10-29

    CPC分类号: H01S5/5009 H01S5/3201

    摘要: The invention concerns a semiconductor optical amplifier. The optical guide structure of this amplifier comprises a rectangular cross-section active stripe (12). Its material is homogeneous and it is subjected to a tensile strain sufficient to render the amplifier insensitive to the polarisation of the light to be amplified.The invention finds an application in optical telecommunications.

    摘要翻译: PCT No.PCT / FR97 / 00373 Sec。 371日期1997年10月29日第 102(e)日期1997年10月29日PCT 1997年3月3日PCT公布。 公开号WO97 / 33353 日期:1997年9月12日本发明涉及一种半导体光放大器。 该放大器的光导结构包括矩形截面有源条纹(12)。 其材料是均匀的,并且其经受足够的拉伸应变以使放大器对待放大的光的偏振不敏感。 本发明在光通信中发现了一种应用。

    Range imaging devices and methods
    3.
    发明授权
    Range imaging devices and methods 有权
    范围成像设备和方法

    公开(公告)号:US09046359B2

    公开(公告)日:2015-06-02

    申请号:US13478902

    申请日:2012-05-23

    摘要: An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.

    摘要翻译: 激光二极管发射体阵列被用作范围成像系统的照明源。 激光二极管发射器设置在公共衬底上。 当其中一个发射器发生故障时,剩余的发射器发出足够的光以满足输出光功率规格。 发射器可以间隔很紧的位置。 紧密的间距有助于将整个阵列封装在公共散热器上的紧凑型单个封装中。

    Optical waveguide transition and method of fabricating it
    5.
    发明授权
    Optical waveguide transition and method of fabricating it 失效
    光波导过渡及其制造方法

    公开(公告)号:US5659646A

    公开(公告)日:1997-08-19

    申请号:US378278

    申请日:1995-01-26

    CPC分类号: G02B6/1228 G02B6/305

    摘要: The invention concerns an optical waveguide transition and its fabrication method, enabling coupling between a buried optical waveguide and a ridged optical waveguide. The transition structure is formed during etching of a layer containing the buried optical waveguide, the transition area being formed by adiabatically increasing the lateral dimensions of the buried waveguide. Top layers are deposited on the buried waveguide and its widened structure in the transition area, and the ridged optical waveguide is fabricated with one part on top of the transition area. Coupling of the respective propagation modes in the buried and ridged waveguides is effected by mode adaptation in the region between the two waveguide structures in the transition area. The transition of the invention is made in two conventional epitaxy steps.

    摘要翻译: 本发明涉及一种光波导过渡及其制造方法,能够实现掩埋光波导与脊状光波导之间的耦合。 在对包含掩埋光波导的层的蚀刻期间形成过渡结构,过渡区域通过绝热地增加掩埋波导的横向尺寸而形成。 顶层沉积在掩埋波导上,并且其在过渡区域中的加宽结构,并且脊状光波导由一部分制造在过渡区域的顶部。 通过在过渡区域中的两个波导结构之间的区域中的模式适应来实现掩埋和脊状波导中各个传播模式的耦合。 本发明的转变在两个常规的外延步骤中进行。

    LASER DEVICE WITH A STEPPED GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE

    公开(公告)号:US20190140426A1

    公开(公告)日:2019-05-09

    申请号:US16235684

    申请日:2018-12-28

    摘要: Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.

    Multi-Electrode Light Emitting Device
    10.
    发明申请
    Multi-Electrode Light Emitting Device 有权
    多电极发光装置

    公开(公告)号:US20100140632A1

    公开(公告)日:2010-06-10

    申请号:US12329100

    申请日:2008-12-05

    申请人: Pierre Doussiere

    发明人: Pierre Doussiere

    IPC分类号: H01L33/00

    摘要: The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile.

    摘要翻译: 本发明涉及一种宽带发光二极管,其具有由多个用于发射多个波长的光的不同材料的发光区域组成的有源层,其中有源层的每个发射区域由 单独的电极,用于通过其光谱分布的多点控制提供宽带发射或光学增益。