摘要:
Disclosed herein is an inertial sensor. The inertial sensor includes: a plurality of driving masses; support bodies connecting a connection bridge so as to support the driving masses; a connection bridge connecting the plurality of driving masses and connecting the plurality of driving masses with the support bodies; and an electrode pattern part including driving electrodes simultaneously driving the driving masses and sensing electrode detecting axial Coriolis force of each of the driving masses.
摘要:
Disclosed herein is an inertial sensor. The inertial sensor includes: a plurality of driving masses; support bodies supporting the driving masses so as to freely move in a state in which the driving masses float; a connection bridge connecting the plurality of driving masses and connecting the plurality of driving masses with the support bodies; and an electrode pattern part including driving electrodes simultaneously driving the driving masses and sensing electrode detecting axial Coriolis force of each of the driving masses.
摘要:
Disclosed herein is an inertial sensor. There is provided an inertial sensor 100, including: a plate-like substrate layer 110, a mass body 130, a post 140, a support part 150 extending in the central direction of the mass body 130 from the post 140, and a detection unit 170 detecting the displacement of the displacement part 113. The inertial sensor adopts the support part 150 limiting the downward displacement of the mass body 130 to prevent the support portion of the mass body 130 from being damaged.
摘要:
An inertial sensor includes a plate-like substrate layer, a mass body, a support frame, a limit stop extending in the central direction of the mass body from the support frame, and a detection unit detecting the displacement of the displacement part. The inertial sensor adopts the limit stop limiting the downward displacement of the mass body to prevent the support portion of the mass body from being damaged.
摘要:
A plastic, waveguide-fed, horn antenna is manufactured using a three-dimensional (3D), polymeric micro hot embossing process. Two cavity resonators may be designed to reduce the impedance mismatch between the pyramidal horn antenna and the feeding waveguide. The waveguide-fed antenna may be fabricated using a self-aligned 3D plastic hot embossing process followed by a selective electroplating and sealing process to coat an approximately 8 μm-thick gold layer around the internal surfaces of the system. As such, this plastic, low-cost manufacturing process may be used to replace the expensive metallic components for millimeter-wave systems and provides a scalable and integrated process for manufacturing an array of antenna.
摘要:
A method for making a microstructure assembly, the method including the steps of providing a first substrate and a second substrate; depositing an electrically conductive material on the second substrate; contacting the second substrate carrying the electrically conductive material with the first substrate; and then supplying current to the electrically conductive material to locally elevate the temperature of said electrically conductive material and cause formation of a bond between the first substrate and the second substrate.
摘要:
A method of fabricating a microstructure is disclosed. The method includes providing a substrate for forming an interface region and an elongated portion extending away from the interface region. A patterned, non-planar etchable structure is formed on one side of the elongated portion of the substrate. An unetchable membrane layer is deposited atop the etchable structure. At least one etching hole is formed in the membrane layer. The etchable structure is etched by placing an etchant into the etching hole to form a cavity underneath the membrane layer, thereby producing a shaft.
摘要:
After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.
摘要:
The invention relates to N-heterocyclic substituent-containing antibiotics, their preparation, and their use. Disclosed are sodium and potassium salts of 7-(α-((N,N′-diisopropylamidino)thio)acetylamino)-3-(((1,2,5,6-tetrahydro-2-methyl-5,6-diox o-1,2,4-triazin-3-yl)thio)methyl) cephalosporanic acid as presented by the general structure (I), their preparation, and their use. The antibiotics of the invention can be used to treat diseases caused by Gram-positive or Gram-negative bacteria such as septicaemia, gastrointestinal tract infection, and urinary tract infection. They have increased half-life in blood and lowered toxicity. They can reduce the frequency of drug use and lower medical treatment costs. They have improved stability and can be stored at ambient temperatures. The method of the invention is simple, and it produces high purity products which can meet the requirements of clinical use.
摘要:
After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.