公开(公告)号：US08652967B2

公开(公告)日：2014-02-18

申请号：US13420815

申请日：2012-03-15

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子电荷材料和阴离子充电材料的佐剂，其中助剂包含聚电解质盐，其包含：（a）重均分子量为2,000〜50,000的线性聚电解质与 接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US08163650B2

公开(公告)日：2012-04-24

申请号：US11634238

申请日：2006-12-06

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged material in order to increase polishing selectivity of the anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子电荷材料和阴离子充电材料的佐剂，其在阳离子电荷材料上形成吸附层，以增加阴离子带电材料的抛光选择性，其中助剂包含含有 ：（a）重均分子量为2,000〜50,000的线性聚电解质与重均分子量为1,000〜20,000的接枝型聚电解质的混合物，其包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US20120187333A1

公开(公告)日：2012-07-26

申请号：US13420815

申请日：2012-03-15

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的助剂，其中助剂包含聚电解质盐，该聚电解质盐包含：（a）重均分子量为2,000〜50,000的线性聚电解质与 接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US08147711B2

公开(公告)日：2012-04-03

申请号：US12086155

申请日：2006-12-08

申请人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

摘要翻译： 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

公开(公告)号：US20090267020A1

公开(公告)日：2009-10-29

申请号：US12086155

申请日：2006-12-08

申请人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K3/14

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

摘要翻译： 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

公开(公告)号：US07674716B2

公开(公告)日：2010-03-09

申请号：US11319071

申请日：2005-12-28

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms a adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material to cationically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的佐剂，其在阳离子充电材料上形成吸附层，以增加阴离子充电材料对阳离子电荷材料的抛光选择性，其中佐剂 包括聚电解质盐，其包含：（a）重均分子量为1,000〜20,000的接枝型聚电解质，其包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US20060141741A1

公开(公告)日：2006-06-29

申请号：US11319071

申请日：2005-12-28

申请人： Gi Yi ,  Jong Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

发明人： Gi Yi ,  Jong Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

IPC分类号： H01L21/76

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms a adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material to cationically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的佐剂，其在阳离子充电材料上形成吸附层，以增加阴离子充电材料对阳离子电荷材料的抛光选择性，其中佐剂 包括聚电解质盐，其包含：（a）重均分子量为1,000〜20,000的接枝型聚电解质，并且包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US20130316436A1

公开(公告)日：2013-11-28

申请号：US13702745

申请日：2011-03-25

申请人： Kyung Suk Cho ,  Jung Hee Lee ,  Kyung Eun Moon ,  Tae Gwan Kim ,  Sang Hyon Lee

发明人： Kyung Suk Cho ,  Jung Hee Lee ,  Kyung Eun Moon ,  Tae Gwan Kim ,  Sang Hyon Lee

IPC分类号： C12N1/20

CPC分类号： C12N1/20 ,  A61L9/014 ,  A61L2209/14 ,  C12R1/01

摘要： The present invention relates to a Sphingomonas sp. MD2 strain (KCTC 11845BP), a composition including the strain for decomposing methane or odor-producing compounds, a biocover or biofilter including the composition, a method for decomposing methane or odor-producing compounds using the composition, a system for decomposing methane or odor-producing compounds using the biocover or biofilter, and the use of the strain for decomposing methane or odor-producing compounds. According to the present invention, methane and odor can be effectively removed concurrently, and thus the cost required for the separate treatment of methane and odor can be reduced, and methane and odor-producing compounds in landfills or the like can be effectively decomposed.

摘要翻译： 本发明涉及鞘氨醇单胞菌 MD2菌株（KCTC 11845BP），包含用于分解甲烷或异味生成化合物的菌株的组合物，包含该组合物的生物覆盖物或生物过滤器，使用该组合物分解甲烷或产生异味的化合物的方法，用于分解甲烷或气味的体系 使用生物过滤器或生物过滤器生产化合物，以及使用该菌株分解甲烷或产生气味的化合物。 根据本发明，可以同时有效地除去甲烷和气味，从而可以降低单独处理甲烷和气味所需的成本，并且可以有效地分解填埋场等中的甲烷和产生气味的化合物。

公开(公告)号：US08373245B2

公开(公告)日：2013-02-12

申请号：US12654940

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L29/47

CPC分类号： H01L29/66007 ,  H01L21/02521 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/872

摘要： Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer.

摘要翻译： 公开了一种半导体器件，包括：基底; 设置在所述基底基板上的半导体层; 在所述半导体层上具有沿第一方向设置的欧姆电极线的欧姆电极部; 以及肖特基电极部，其设置为与半导体层上的欧姆电极线间隔开，并且包括沿第一方向设置的肖特基电极线，其中肖特基电极线和欧姆电极线交替地平行设置，并且 欧姆电极部分还包括由半导体层上的肖特基电极线覆盖的第一欧姆电极。

公开(公告)号：US08373200B2

公开(公告)日：2013-02-12

申请号：US12842303

申请日：2010-07-23

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/739

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.

摘要翻译： 本文公开了一种氮化物基半导体器件。 氮化物基半导体器件包括：基底; 外延生长层，其设置在所述基底基板上，并且由于与所述基底基板的晶格差异而产生缺陷; 在填充缺陷的同时覆盖外延生长层的漏电流屏障; 以及设置在外延生长层上的电极部分。