公开(公告)号：US20220302024A1

公开(公告)日：2022-09-22

申请号：US17470529

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Yasuhito YOSHIMIZU ,  Kaori UMEZAWA ,  Kosuke TAKAI

IPC: H01L23/522 ,  H01L27/11582 ,  H01L27/11556 ,  H01L29/423 ,  H01L23/00 ,  H01L21/033

Abstract: A semiconductor device includes a substrate, a first stacked film and a second stacked film each including insulating layers and electrode layers alternately provided on the substrate, and columnar portions provided in the insulating layers and electrode layers of the first stacked film, and including charge storage layers and semiconductor layers. The second stacked film further includes an insulator including first and second lower faces, the first lower face is inclined by a first angle to an upper face of one of the electrode layers in the first stacked film, the second lower face is inclined by a second angle to the upper face of the one of the electrode layers in the first stacked film, and the second angle is less than the first angle. The insulating layers and electrode layers in the second stacked film are provided below the first and second lower faces of the insulator.

公开(公告)号：US20240096653A1

公开(公告)日：2024-03-21

申请号：US18469619

申请日：2023-09-19

Applicant: SHIBAURA MECHATRONICS CORPORATION ,  KIOXIA CORPORATION

Inventor： Kensuke DEMURA ,  Satoshi NAKAMURA ,  Masaya KAMIYA ,  Minami NAKAMURA ,  Kosuke TAKAI ,  Mana TANABE ,  Kaori UMEZAWA

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67109 ,  H01L21/68764

Abstract: According to one embodiment a substrate treatment apparatus incorporates, into a frozen film, a contaminant adhered to a substrate surface by freezing a liquid film on the surface. The apparatus includes a placement part configured to rotate the substrate, a liquid supply part configured to supply a liquid via a nozzle to the frozen film including the contaminant, a moving part configured to move the nozzle parallel to the substrate surface, and a controller configured to control a rotation of the substrate by the placement part, a supply of the liquid by the liquid supply part, and a movement of the nozzle by the moving part. The controller rotates the substrate by controlling the placement part, supplies the liquid to the frozen film by controlling the liquid supply part, and moves the nozzle from a perimeter edge vicinity to a rotation center vicinity of the substrate by controlling the moving part.

公开(公告)号：US20240096652A1

公开(公告)日：2024-03-21

申请号：US18333572

申请日：2023-06-13

Applicant: Kioxia Corporation

Inventor： Mana TANABE ,  Kaori UMEZAWA ,  Kosuke TAKAI

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68764

Abstract: According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.

公开(公告)号：US20220384218A1

公开(公告)日：2022-12-01

申请号：US17885362

申请日：2022-08-10

Applicant: KIOXIA CORPORATION

Inventor： Mana TANABE ,  Kosuke TAKAI ,  Kenji MASUI ,  Kaori UMEZAWA

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

公开(公告)号：US20220082933A1

公开(公告)日：2022-03-17

申请号：US17349750

申请日：2021-06-16

Applicant: Kioxia Corporation

Inventor： Kaori UMEZAWA ,  Kosuke TAKAI ,  Shoji MIMOTOGI ,  Tsubasa NAITO

IPC: G03F1/76 ,  H01L21/027

Abstract: In one embodiment, a method of manufacturing an original plate includes forming a first film on a first substrate, wherein an etching rate of the first film by a chemical solution including hydrofluoric acid is larger than an etching rate of the first substrate by the chemical solution. The method further includes forming a second film on the first film, wherein an etching rate of the second film by the chemical solution is smaller than the etching rate of the first film by the chemical solution. The method further includes etching the first substrate by the chemical solution using the first film and the second film as masks to form, on the first substrate, a first region having a first height, a second region having a second height different from the first height, and a first slope located between the first region and the second region.