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Patent Agency Ranking
公开(公告)号：US10892433B2
公开(公告)日：2021-01-12
申请号：US15612768
申请日：2017-06-02
Applicant: Korea University Research and Business Foundation , Korea Institute of Science and Technology
Inventor： Jinhan Cho , Wan Ki Bae , Ikjun Cho
Abstract: Disclosed is a quantum dot light emitting device including a ligand-substituted quantum dot light emitting layer with a polymer having amine groups. The introduction of the ligand-substituted quantum dot light emitting layer with a polymer having amine groups changes the energy level of an electron transport layer and enables control over the charge injection properties of the device so that the flow of electrons can be controlled. In addition, the ligand substitution is effective in removing oleic acid as a stabilizer of quantum dots to prevent an increase in driving voltage caused by the introduction of the additional material, achieving markedly improved efficiency of the device. Also disclosed is a method for fabricating the quantum dot light emitting device.
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公开(公告)号：US09966134B1
公开(公告)日：2018-05-08
申请号：US15407357
申请日：2017-01-17
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Jong Hyuk Park , Sang-Soo Lee , Keun-Young Shin , Young Jin Kim , Min Park , Heesuk Kim , Jeong Gon Son , Wan Ki Bae
CPC classification number: H01L45/1253 , G11C11/5685 , G11C13/0002 , G11C13/0007 , G11C13/0016 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/52 , G11C2213/71 , G11C2213/77 , H01L27/11 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/16 , H01L45/1675
Abstract: Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.
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公开(公告)号：US10510463B2
公开(公告)日：2019-12-17
申请号：US15824135
申请日：2017-11-28
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Jeong Gon Son , Sang-Soo Lee , Heesuk Kim , Jong Hyuk Park , Wan Ki Bae , Hyo Won Kwon
Abstract: A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.
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公开(公告)号：US20190006061A1
公开(公告)日：2019-01-03
申请号：US15824135
申请日：2017-11-28
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Jeong Gon SON , Sang-Soo Lee , Heesuk Kim , Jong Hyuk Park , Wan Ki Bae , Hyo Won Kwon
CPC classification number: H01B5/14 , H01B1/22 , H01B13/0036
Abstract: A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.
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公开(公告)号：US20170352827A1
公开(公告)日：2017-12-07
申请号：US15612768
申请日：2017-06-02
Applicant: Korea University Research and Business Foundation , Korea Institute of Science and Technology
Inventor： Jinhan Cho , Wan Ki Bae , Ikjun Cho
CPC classification number: H01L51/502 , C09K11/672 , C09K11/883 , H01L51/0034 , H01L51/5012 , H01L51/5072 , H01L51/56 , H01L2251/303 , H01L2251/305 , H01L2251/306 , H05B33/14
Abstract: Disclosed is a quantum dot light emitting device including a ligand-substituted quantum dot light emitting layer with a polymer having amine groups. The introduction of the ligand-substituted quantum dot light emitting layer with a polymer having amine groups changes the energy level of an electron transport layer and enables control over the charge injection properties of the device so that the flow of electrons can be controlled. In addition, the ligand substitution is effective in removing oleic acid as a stabilizer of quantum dots to prevent an increase in driving voltage caused by the introduction of the additional material, achieving markedly improved efficiency of the device. Also disclosed is a method for fabricating the quantum dot light emitting device.
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