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公开(公告)号：US07268481B2
公开(公告)日：2007-09-11
申请号：US10931516
申请日：2004-09-01
Applicant: Kanwal K. Raina
Inventor： Kanwal K. Raina
CPC classification number: H01J3/022
Abstract: This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 μΩ-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.
Abstract translation: 本发明提供一种导电铝膜及其形成方法，其中非导电杂质掺入铝膜中。 在一个实施方案中，引入氮产生氮化铝亚相，其将铝膜中的小丘钉下来以保持基本平滑的表面。 即使在后续的热处理之后，该膜仍然基本上无小丘状。 氮化铝次相仅导致电阻率的标称增加（电阻率保持在约12μΩ-cm以下），从而使得该膜适合作为用于集成电路或显示器件的导电层。
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2.发明授权公开(公告)号：US07161211B2
公开(公告)日：2007-01-09
申请号：US10289550
申请日：2002-11-06
Applicant: Kanwal K. Raina , David H. Wells
Inventor： Kanwal K. Raina , David H. Wells
IPC: H01L27/01 , H01L27/12 , H01L31/392 , H01L29/76 , H01L29/94
CPC classification number: H01L21/2855 , C23C14/0057 , C23C14/185 , H01L21/32051 , H01L29/458 , H01L29/4908 , Y10S438/937 , Y10T428/12229
Abstract: Aluminum-containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
Abstract translation: 含有膜的含氧膜含铝。 在铝或铝合金溅射沉积到半导体衬底上时，通过将氢气与氩气一起引入溅射沉积真空室中形成含铝膜。 这样形成的含铝膜与纯铝相比具有低电阻率，较低的粗糙度，良好的机械强度和较低的残余应力。
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公开(公告)号：US06831403B2
公开(公告)日：2004-12-14
申请号：US10327485
申请日：2002-12-20
Applicant: Behnam Moradi , Kanwal K. Raina , Michael J. Westphal
Inventor： Behnam Moradi , Kanwal K. Raina , Michael J. Westphal
IPC: H01J162
CPC classification number: H01J9/025 , H01J2329/00
Abstract: Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.
Abstract translation: 改进的场致发射显示器包括位于阴极组件中的铬栅电极和相关介电层之间的铜，铝，氮化硅或掺杂或未掺杂的非晶，多晶或微晶硅的缓冲层。 缓冲层基本上减少或消除了铬栅电极和电介质层之间不利的化学反应的发生。
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公开(公告)号：US06440505B1
公开(公告)日：2002-08-27
申请号：US09707441
申请日：2000-11-06
Applicant: Kanwal K. Raina
Inventor： Kanwal K. Raina
IPC: C23C1634
CPC classification number: C03C17/225 , C03C23/008 , C03C2217/281 , C03C2218/152 , C03C2218/31 , C23C16/0227 , C23C16/345 , H01J9/241 , H01J2201/304 , H01J2329/00
Abstract: The invention includes methods of treating sodalime glass surfaces for deposition of silicon nitride and methods of forming field emission display devices. In one aspect, the invention includes a method of treating a sodalime glass surface for deposition of silicon nitride comprising: a) cleaning a surface of the glass with detergent; and b) contacting the cleaned surface with a solution comprising a strong oxidant to remove non-silicon-dioxide materials from the surface and from a zone underlying and proximate the surface. In another aspect, the invention includes a method of treating a sodalime glass surface region for deposition of silicon nitride comprising: a) providing a sodalime glass surface region having a first concentration of an undesired chemical; b) contacting the sodalime glass surface region with a detergent solution; c) agitating the detergent solution across the sodalime glass surface region; d) removing the detergent solution from the surface region; e) after removing the detergent solution, contacting the sodalime glass surface region with a sulfuric acid solution; and f) removing the sulfuric acid solution from the sodalime glass surface region; wherein, after removing the sulfuric acid solution, the sodalime glass surface region comprises less than the first concentration of the undesired chemical.
Abstract translation: 本发明包括处理用于沉积氮化硅的钠钙玻璃表面的方法和形成场致发射显示装置的方法。 一方面，本发明包括一种处理含钠玻璃表面以沉积氮化硅的方法，包括：a）用洗涤剂清洗玻璃表面; 和b）使清洁的表面与包含强氧化剂的溶液接触，以从表面和下表面附近的区域除去非二氧化硅材料。 另一方面，本发明包括一种处理用于沉积氮化硅的钠钙玻璃表面区域的方法，包括：a）提供具有不期望化学品的第一浓度的钠钙玻璃表面区域; b）将钠钙玻璃表面区域与洗涤剂溶液接触; c）在洗涤玻璃表面区域搅拌洗涤剂溶液; d）从表面区域去除洗涤剂溶液; e）除去洗涤剂溶液后，将钠钙玻璃表面区域与硫酸溶液接触; 和f）从钠钙玻璃表面区域除去硫酸溶液; 其中，在去除硫酸溶液之后，钠钙玻璃表面区域包含小于不需要的化学品的第一浓度。
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公开(公告)号：US06211608B1
公开(公告)日：2001-04-03
申请号：US09096085
申请日：1998-06-11
Applicant: Kanwal K. Raina , James J. Alwan
Inventor： Kanwal K. Raina , James J. Alwan
IPC: H01J102
CPC classification number: H01J1/3044 , H01J31/127 , H01J2201/30403
Abstract: A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.
Abstract translation: 公开了一种场致发射器件，其具有位于下面的阴极导电层和上覆电阻层之间的缓冲层。 缓冲层由基本上未掺杂的非晶硅组成。 延伸通过电阻层的任何针孔缺陷或不连续性终止于缓冲层，从而防止由针孔缺陷引起的问题。 特别地，缓冲层防止了电阻层的破坏，从而降低了短路的可能性。 缓冲层进一步降低了由后续处理步骤引起的各种层的分层或其它不规则的风险。 还公开了制造和使用具有缓冲层的场致发射器件的方法。
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Patent Agency Ranking
公开(公告)号：US6165568A
公开(公告)日：2000-12-26
申请号：US23661
申请日：1998-02-09
Applicant: Kanwal K. Raina
Inventor： Kanwal K. Raina
CPC classification number: C03C17/225 , C03C23/008 , C03C2217/281 , C03C2218/152 , C03C2218/31 , C23C16/0227 , C23C16/345 , H01J9/241 , H01J2201/304 , H01J2329/00
Abstract: The invention includes methods of treating sodalime glass surfaces for deposition of silicon nitride and methods of forming field emission display devices. In one aspect, the invention includes a method of treating a sodalime glass surface for deposition of silicon nitride comprising: a) cleaning a surface of the glass with detergent; and b) contacting the cleaned surface with a solution comprising a strong oxidant to remove non-silicon-dioxide materials from the surface and from a zone underlying and proximate the surface. In another aspect, the invention includes a method of treating a sodalime glass surface region for deposition of silicon nitride comprising: a) providing a sodalime glass surface region having a first concentration of an undesired chemical; b) contacting the sodalime glass surface region with a detergent solution; c) agitating the detergent solution across the sodalime glass surface region; d) removing the detergent solution from the surface region; e) after removing the detergent solution, contacting the sodalime glass surface region with a sulfuric acid solution; and f) removing the sulfuric acid solution from the sodalime glass surface region; wherein, after removing the sulfuric acid solution, the sodalime glass surface region comprises less than the first concentration of the undesired chemical.
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7.发明授权公开(公告)号：US07097526B2
公开(公告)日：2006-08-29
申请号：US11167695
申请日：2005-06-27
Applicant: Kanwal K. Raina , Benham Moradi
Inventor： Kanwal K. Raina , Benham Moradi
IPC: H01J9/24
CPC classification number: H01J1/30 , H01J1/304 , H01J1/3044 , H01J9/025 , H01J31/127 , H01J2201/319 , H01J2329/00
Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.
Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。
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公开(公告)号：US06509686B1
公开(公告)日：2003-01-21
申请号：US09398155
申请日：1999-09-16
Applicant: Behnam Moradi , Kanwal K. Raina , Michael J. Westphal
Inventor： Behnam Moradi , Kanwal K. Raina , Michael J. Westphal
IPC: H01J1304
CPC classification number: H01J9/025 , H01J2329/00
Abstract: Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.
Abstract translation: 改进的场致发射显示器包括位于阴极组件中的铬栅电极和相关介电层之间的铜，铝，氮化硅或掺杂或未掺杂的非晶，多晶或微晶硅的缓冲层。 缓冲层基本上减少或消除了铬栅电极和电介质层之间的不利的化学反应的发生。
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9.发明授权Microelectronic substrate assemblies having elements in low compression state 有权微电子衬底组件和制造用于机械和化学机械平面化工艺的这种微电子衬底组件的方法。公开(公告)号：US06239548B1
公开(公告)日：2001-05-29
申请号：US09643202
申请日：2000-08-21
Applicant: Kanwal K. Raina , James J. Alwan
Inventor： Kanwal K. Raina , James J. Alwan
IPC: H01J162
CPC classification number: H01J9/025
Abstract: The present disclosure describes microelectronic substrate assemblies, and methods for making and using such substrate assemblies in mechanical and chemical-mechanical planarizing processes. A microelectronic substrate assembly is fabricated in accordance with one aspect of the invention by forming a critical layer in a film stack on the substrate and manipulating the critical layer to have a low compression internal stress. The critical layer, more specifically, is a layer that is otherwise in a tensile state or a high compression state without being manipulated to control the internal stress in the critical layer to be in a low compression state. The stress in the critical layer can be manipulated by changing the chemistry, temperature or energy level of the process used to deposit or otherwise form the critical layer. The stress in the critical layer can also be manipulated using heat treatments and other processes. A critical layer composed of chromium, for example, can be manipulated by sputtering chromium in an argon/nitrogen atmosphere instead of solely an argon atmosphere to impart stress controlling elements (nitrogen molecules) into the chromium for producing a low compression chromium layer.
Abstract translation: 本公开描述了微电子衬底组件，以及用于在机械和化学机械平面化工艺中制造和使用这种衬底组件的方法。 根据本发明的一个方面通过在衬底上的膜堆叠中形成临界层并操纵临界层以具有低的压缩内部应力来制造微电子衬底组件。 更具体地说，临界层是否则处于拉伸状态或高压缩状态的层，而不被操纵以控制临界层中的内部应力处于低压缩状态。 临界层中的应力可以通过改变用于沉积或以其他方式形成临界层的方法的化学，温度或能量水平来操纵。 临界层中的应力也可以使用热处理和其他工艺进行操作。 例如，由铬构成的临界层可以通过在氩/氮气氛中溅射铬而不是仅仅氩气来操作，以将应力控制元素（氮分子）赋予铬以产生低压缩铬层。
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10.发明授权公开(公告)号：US06194783B1
公开(公告)日：2001-02-27
申请号：US09177738
申请日：1998-10-23
Applicant: Kanwal K. Raina
Inventor： Kanwal K. Raina
IPC: H01L2348
CPC classification number: H01L21/2855 , C23C14/0057 , C23C14/185 , H01L21/32051 , H01L29/458 , H01L29/4908 , Y10S438/937 , Y10T428/12229
Abstract: Aluminum-containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
Abstract translation: 含有膜的含氧膜含铝。 在铝或铝合金溅射沉积到半导体衬底上时，通过将氢气与氩气一起引入溅射沉积真空室中形成含铝膜。 这样形成的含铝膜与纯铝相比具有低电阻率，较低的粗糙度，良好的机械强度和较低的残余应力。
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