公开(公告)号：US06518605B1

公开(公告)日：2003-02-11

申请号：US09770188

申请日：2001-01-29

申请人： Keisuke Hatano ,  Masayuki Furumiya ,  Toru Kawasaki

发明人： Keisuke Hatano ,  Masayuki Furumiya ,  Toru Kawasaki

IPC分类号： H01L29768

CPC分类号： H01L27/14603 ,  H01L27/14692

摘要： A solid state imaging pickup device with a single-layer electrode structure which eliminates the release area at the terminal part of the charge transfer electrodes by surrounding the charge transfer electrodes with a dummy pattern, or with a pattern formed by connecting the charge transfer electrodes of a certain phase with each other at the outermost periphery. Surrounding the charge transfer electrode improves embedding performance when an insulating film is re-flowed for flattening inter-electrode gaps. This enables formation of a good metal wire or shielding film with no step-cut, thus improving the reliability of a solid state imaging pickup device.

摘要翻译： 一种具有单层电极结构的固态成像拾取装置，其通过用虚拟图案围绕电荷转移电极或通过连接电荷转移电极形成的图案来消除电荷转移电极的末端部分处的释放区域 在最外周彼此相邻。 围绕电荷转移电极，当绝缘膜被再流动以使平板化的电极间间隙时，可提高嵌入性能。 这样可以形成没有阶梯切割的良好的金属线或屏蔽膜，从而提高了固态成像拾取装置的可靠性。

公开(公告)号：US6097433A

公开(公告)日：2000-08-01

申请号：US869442

申请日：1997-06-05

申请人： Shinichi Kawai ,  Michihiro Morimoto ,  Masayuki Furumiya ,  Chihiro Ogawa ,  Keisuke Hatano ,  Yasuaki Hokari ,  Takashi Sato ,  Nobuhiko Mutoh ,  Ichiro Murakami ,  Shinobu Suwazono ,  Hiroaki Utsumi ,  Kouichi Arai ,  Kozo Orihara ,  Nobukazu Teranishi ,  Takao Tamura

发明人： Shinichi Kawai ,  Michihiro Morimoto ,  Masayuki Furumiya ,  Chihiro Ogawa ,  Keisuke Hatano ,  Yasuaki Hokari ,  Takashi Sato ,  Nobuhiko Mutoh ,  Ichiro Murakami ,  Shinobu Suwazono ,  Hiroaki Utsumi ,  Kouichi Arai ,  Kozo Orihara ,  Nobukazu Teranishi ,  Takao Tamura

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/353 ,  H04N5/359 ,  H04N5/3722 ,  H04N5/3728 ,  H04N3/14

CPC分类号： H01L27/14812

摘要： Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

摘要翻译： 分流布线（12）以覆盖垂直CCD寄存器的导电遮光膜的形式，并且还用于供电，在垂直方向上投射到相邻的光电传感器（11）之间的位置，并且突出部分 相邻的金属配线设定为0.2μm以下，并且限制在相邻的金属布线之间的电场为107V / cm以下的相邻的金属配线的距离， 电路。

公开(公告)号：US06177692B1

公开(公告)日：2001-01-23

申请号：US09382644

申请日：1999-08-25

申请人： Masayuki Furumiya ,  Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Masayuki Furumiya ,  Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： G11C1928

CPC分类号： H01L29/76816 ,  G11C19/282 ,  G11C19/285 ,  H01L27/14806

摘要： There is provided a solid-state image sensor including (a) a photoelectric converter which converts light into electric charges, (b) a transfer section which transfers the electric charges, (c) a floating diffusion layer which converts the transferred electric charges into a voltage, and (d) a multi-staged source follower circuit which amplifies and then outputs the voltage, a distance L2 between a wiring through which drain potential is supplied and a gate electrode in a first-stage MOSFET being longer than the same in second or later MOSFETs. In accordance with the solid-state image sensor, it is possible to reduce a capacity of a gate electrode in a first-stage MOSFET, which ensures high sensitivity even in a solid-state image sensor having small-sized pixels which deal with a small quantity of electric charges.

摘要翻译： 提供了一种固态图像传感器，其包括：（a）将光转换成电荷的光电转换器，（b）传送电荷的转印部，（c）将转印的电荷转换为 电压和（d）放大然后输出电压的多级源极跟随器电路，提供漏极电位的布线与第二级MOSFET中的第一级MOSFET中的栅电极之间的距离L2大于第二级MOSFET 或更晚的MOSFET。 根据固态图像传感器，可以降低第一级MOSFET中的栅电极的容量，即使在具有小尺寸像素的固态图像传感器中也能确保高灵敏度 电费数量

公开(公告)号：US08981515B2

公开(公告)日：2015-03-17

申请号：US13534309

申请日：2012-06-27

申请人： Keisuke Hatano ,  Atsushi Toda

发明人： Keisuke Hatano ,  Atsushi Toda

IPC分类号： H01L31/00 ,  H01L27/146

CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/1464

摘要： A solid-state imaging device includes a plurality of photoelectric conversion regions stacked at different depths within a semiconductor substrate of each pixel to photoelectrically convert light of different wavelength bands, and a discharge region formed between the photoelectric conversion regions adjacent to each other in a depth direction of the semiconductor substrate to discharge charges generated by photoelectric conversion in regions between the photoelectric conversion regions.

摘要翻译： 固态成像装置包括多个光电转换区域，该多个光电转换区域堆叠在每个像素的半导体衬底内的不同深度处，以对不同波长带的光进行光电转换，并且形成在彼此相邻的光电转换区域之间的放电区域 方向来放电在光电转换区域之间的区域中通过光电转换产生的电荷。

公开(公告)号：US20100124710A1

公开(公告)日：2010-05-20

申请号：US12585922

申请日：2009-09-29

申请人： Keisuke Hatano ,  Takeshi Matsunuma ,  Shinji Miyazawa

发明人： Keisuke Hatano ,  Takeshi Matsunuma ,  Shinji Miyazawa

IPC分类号： G03F1/00

CPC分类号： G03F1/40 ,  G03F1/50

摘要： A photomask includes a base, a plurality of chip pattern regions over which a light shielding pattern of a metal material is defined, the plurality of chip pattern regions being defined on the base, scribe regions defined between the chip pattern regions, the scribe regions being defined by using the light shielding pattern, and slits in which the light shielding pattern is not defined, the slits being defined so as to surround the chip pattern regions.

摘要翻译： 光掩模包括基底，多个芯片图案区域，金属材料的遮光图案被限定在其上，所述多个芯片图案区域被限定在基底上，划线区域限定在芯片图案区域之间，划线区域为 通过使用遮光图案限定，以及未限定遮光图案的狭缝，狭缝被限定为围绕芯片图案区域。

公开(公告)号：US06559509B1

公开(公告)日：2003-05-06

申请号：US09651103

申请日：2000-08-30

申请人： Keisuke Hatano ,  Yasutaka Nakashiba

发明人： Keisuke Hatano ,  Yasutaka Nakashiba

IPC分类号： H01L218238

CPC分类号： H01L27/0259

摘要： A semiconductor device protection circuit is composed of a first semiconductor portion of a first conductive type, a second semiconductor portion of a second conductive type connected to the first semiconductor portion, a third semiconductor portion of the first conductive type connect to the second semiconductor portion, and fourth and fifth semiconductor portions of the second conductive type, both connected to the second semiconductor portion. The first conductive portion is connected to a semiconductor circuit which is to be protected from electrostatic breakdown. The third, fourth, and fifth semiconductor portions are short-circuited. The fourth and fifth semiconductor portions are located at opposite sides of the third semiconductor portion.

摘要翻译： 半导体器件保护电路由第一导电类型的第一半导体部分，与第一半导体部分连接的第二导电类型的第二半导体部分，第一导电类型的第三半导体部分连接到第二半导体部分， 第二导电类型的第四和第五半导体部分都连接到第二半导体部分。 第一导电部分连接到要被防止静电击穿的半导体电路。 第三，第四和第五半导体部分被短路。 第四和第五半导体部分位于第三半导体部分的相对侧。

公开(公告)号：US06399485B1

公开(公告)日：2002-06-04

申请号：US09628435

申请日：2000-07-28

申请人： Keisuke Hatano ,  Tsuyoshi Nagata

发明人： Keisuke Hatano ,  Tsuyoshi Nagata

IPC分类号： H01L2144

CPC分类号： H01L27/14643 ,  H01L21/28518 ,  H01L27/14609 ,  H01L27/14689 ,  H01L29/665

摘要： The present invention provides a semiconductor device having: at least a first diffusion layer having a first impurity concentration; at least a second diffusion layer having a first impurity concentration which is lower than the first impurity concentration, and the first and second diffusion layers being of the same conductivity type, wherein a silicide layer is formed over the first diffusion layer, while no silicide layer is formed over the second diffusion layer.

摘要翻译： 本发明提供一种半导体器件，其具有：至少第一杂质浓度的第一扩散层; 至少第二扩散层，其具有低于第一杂质浓度的第一杂质浓度，第一和第二扩散层具有相同的导电类型，其中在第一扩散层上形成硅化物层，而没有硅化物层 形成在第二扩散层上。

公开(公告)号：US20130009263A1

公开(公告)日：2013-01-10

申请号：US13534309

申请日：2012-06-27

申请人： Keisuke Hatano ,  Atsushi Toda

发明人： Keisuke Hatano ,  Atsushi Toda

IPC分类号： H01L27/146

CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/1464

摘要： A solid-state imaging device includes a plurality of photoelectric conversion regions stacked at different depths within a semiconductor substrate of each pixel to photoelectrically convert light of different wavelength bands, and a discharge region formed between the photoelectric conversion regions adjacent to each other in a depth direction of the semiconductor substrate to discharge charges generated by photoelectric conversion in regions between the photoelectric conversion regions.

摘要翻译： 固态成像装置包括多个光电转换区域，该多个光电转换区域堆叠在每个像素的半导体衬底内的不同深度处，以对不同波长带的光进行光电转换，并且形成在彼此相邻的光电转换区域之间的放电区域 方向来放电在光电转换区域之间的区域中通过光电转换产生的电荷。

公开(公告)号：US07122902B2

公开(公告)日：2006-10-17

申请号：US10127266

申请日：2002-04-22

申请人： Keisuke Hatano ,  Takahisa Abiru

发明人： Keisuke Hatano ,  Takahisa Abiru

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L23/53238 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/05073 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/04953

摘要： A semiconductor device according to the present invention comprises a substrate; a copper interconnect layer formed on the top surface side of the substrate; an aluminum bonding pad formed on the top surface side of the copper interconnect layer with an aluminum-based material; and an aluminum interconnect formed on the top surface side of the copper interconnect layer with an aluminum-based material.

公开(公告)号：US06747355B2

公开(公告)日：2004-06-08

申请号：US10196430

申请日：2002-07-17

申请人： Takahisa Abiru ,  Keisuke Hatano

发明人： Takahisa Abiru ,  Keisuke Hatano

IPC分类号： H01L2348

CPC分类号： H01L24/03 ,  H01L23/5226 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/04953

摘要： A connection via hole is formed in an inter layer insulation film that covers a copper pad. Copper is formed within the connection via hole to form a connection copper via metal. An aluminum pad having a barrier metal thereunder for preventing reaction between copper and aluminum is formed on the connection copper via metal, thereby electrically connecting the copper pad and the aluminum pad to each other through the connection copper via metal. A step formed by the connection via hole that is formed in the inter layer insulation film is made substantially equal to zero with the aid of the connection copper via metal and at the same time, a film thickness of aluminum constituting the aluminum pad is reduced, thereby reducing manufacturing cost of the semiconductor device. Moreover, even when the connection copper via metal directly lying under the aluminum pad is oxidized, oxidation of the copper pad can be prevented, thereby advantageously preventing the breaking of copper interconnects connected to the copper pad and improving reliability of the semiconductor device.

摘要翻译： 在覆盖铜焊盘的层间绝缘膜中形成连接通孔。 在连接通孔内形成铜，以形成金属铜连接。 在金属连接铜上形成有用于防止铜和铝之间的反应的具有阻挡金属的铝焊盘，从而通过金属铜连接铜焊盘和铝焊盘彼此。 通过形成在层间绝缘膜中的连接通孔形成的台阶借助于铜通孔金属的连接基本上等于零，同时，减少了构成铝焊盘的铝的膜厚度， 从而降低半导体器件的制造成本。 此外，即使当直接位于铝焊盘下方的铜通孔金属的连接被氧化时，也可以防止铜焊盘的氧化，从而有利地防止连接到铜焊盘的铜互连的断裂并提高半导体器件的可靠性。