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1.发明申请SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE 有权固态成像装置及其制造方法及电子装置公开(公告)号：US20110049336A1
公开(公告)日：2011-03-03
申请号：US12860168
申请日：2010-08-20
申请人： Takeshi Matsunuma
发明人： Takeshi Matsunuma
IPC分类号： H01L31/09 , H01L31/0232 , H01L31/18 , H01L31/02
CPC分类号： H01L27/14887 , H01L27/14609 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14656 , H01L27/14683 , H01L27/14689 , H01L27/1469 , H01L27/14692
摘要： A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate.
摘要翻译： 固态成像装置包括：通过布线层或绝缘层堆叠的多个基板; 光检测部，其形成在所述多个基板的基板中，设置在所述光入射侧，并且根据所接收的光量产生信号电荷; 以及接触部，其与形成有感光部的基板的非光入射面侧连接，并且从布置在非光入射的布线层的导线向基板提供期望的电压 侧面。
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2.发明授权公开(公告)号：US06482554B2
公开(公告)日：2002-11-19
申请号：US09730604
申请日：2000-12-07
申请人： Takeshi Matsunuma
发明人： Takeshi Matsunuma
IPC分类号： G03F900
CPC分类号： H01L21/76811 , G03F1/58 , G03F7/095 , H01L21/0274 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76813
摘要： A first photoresist film 36 with low sensitivity and a second photoresist film 38 with high sensitivity are stacked on an interlayer insulating film 14 formed on a semiconductor substrate (FIGS. 1A to 1C). The first and second photoresist films 36 and 38 are exposed simultaneously using a photolithography mask 40 having a first transmittance part 48 corresponding to the contact hole and a second transmittance part 50 corresponding to the upper wiring (FIG. 1D). They are developed so that the difference in depth between the contact hole and the upper wiring is three-dimensionally reflected in the first and second photoresist films 36 and 38 (FIG. 1E). Etching is carried out by using them as a mask to form the contact hole and the upper wiring.
摘要翻译： 具有低灵敏度的第一光致抗蚀剂膜36和具有高灵敏度的第二光致抗蚀剂膜38层叠在形成在半导体衬底上的层间绝缘膜14上（图1A至1C）。 使用具有对应于接触孔的第一透射部分48的光刻掩模40和对应于上部布线的第二透射部分50（图1D）同时曝光第一和第二光致抗蚀剂膜36和38。 它们被开发成使得接触孔和上部布线之间的深度差在三维反射在第一和第二光致抗蚀剂膜36和38（图1E）中。 通过使用它们作为掩模来进行蚀刻以形成接触孔和上部布线。
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3.发明授权Solid-state imaging device with overflow drain region and contact thereto in different stacked substrates 有权具有溢出漏极区域并与不同堆叠衬底接触的固态成像器件公开(公告)号：US08530820B2
公开(公告)日：2013-09-10
申请号：US12860168
申请日：2010-08-20
申请人： Takeshi Matsunuma
发明人： Takeshi Matsunuma
IPC分类号： H01L31/00
CPC分类号： H01L27/14887 , H01L27/14609 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14656 , H01L27/14683 , H01L27/14689 , H01L27/1469 , H01L27/14692
摘要： A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate.
摘要翻译： 固态成像装置包括：通过布线层或绝缘层堆叠的多个基板; 光检测部，其形成在所述多个基板的基板中，设置在所述光入射侧，并且根据所接收的光量产生信号电荷; 以及接触部，其与形成有感光部的基板的非光入射面侧连接，并且从布置在非光入射的布线层的导线向基板提供期望的电压 侧面。
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公开(公告)号：US20100124710A1
公开(公告)日：2010-05-20
申请号：US12585922
申请日：2009-09-29
IPC分类号： G03F1/00
摘要： A photomask includes a base, a plurality of chip pattern regions over which a light shielding pattern of a metal material is defined, the plurality of chip pattern regions being defined on the base, scribe regions defined between the chip pattern regions, the scribe regions being defined by using the light shielding pattern, and slits in which the light shielding pattern is not defined, the slits being defined so as to surround the chip pattern regions.
摘要翻译： 光掩模包括基底，多个芯片图案区域，金属材料的遮光图案被限定在其上，所述多个芯片图案区域被限定在基底上，划线区域限定在芯片图案区域之间，划线区域为 通过使用遮光图案限定，以及未限定遮光图案的狭缝，狭缝被限定为围绕芯片图案区域。
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公开(公告)号：US06603163B2
公开(公告)日：2003-08-05
申请号：US09858455
申请日：2001-05-17
IPC分类号： H01L27108
CPC分类号： H01L28/55 , H01L21/76838 , H01L27/0805 , H01L28/60
摘要： A semiconductor device having a capacitor and a method of manufacturing thereof are provided, securing a certain capacitance while allowing the size to be reduced. The semiconductor device includes a capacitor lower electrode having an upper surface and including a metal film, a dielectric film deposited on the upper surface of the capacitor lower electrode and having its thickness smaller than that of the capacitor lower electrode, and a capacitor upper electrode deposited on the dielectric film, having its width smaller than that of the capacitor lower electrode and including a metal film.
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6.发明申请SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE 有权固态成像装置及其制造方法及电子装置公开(公告)号：US20130313616A1
公开(公告)日：2013-11-28
申请号：US13959277
申请日：2013-08-05
申请人： Takeshi Matsunuma
发明人： Takeshi Matsunuma
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14887 , H01L27/14609 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14656 , H01L27/14683 , H01L27/14689 , H01L27/1469 , H01L27/14692
摘要： A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate.
摘要翻译： 固态成像装置包括：通过布线层或绝缘层堆叠的多个基板; 光检测部，其形成在所述多个基板的基板中，设置在所述光入射侧，并且根据所接收的光量产生信号电荷; 以及接触部，其与形成有感光部的基板的非光入射面侧连接，并且从布置在非光入射的布线层的导线向基板提供期望的电压 侧面。
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公开(公告)号：US08007962B2
公开(公告)日：2011-08-30
申请号：US12585922
申请日：2009-09-29
摘要： A photomask includes a base, a plurality of chip pattern regions over which a light shielding pattern of a metal material is defined, the plurality of chip pattern regions being defined on the base, scribe regions defined between the chip pattern regions, the scribe regions being defined by using the light shielding pattern, and slits in which the light shielding pattern is not defined, the slits being defined so as to surround the chip pattern regions.
摘要翻译： 光掩模包括基底，多个芯片图案区域，金属材料的遮光图案被限定在其上，所述多个芯片图案区域被限定在基底上，划线区域限定在芯片图案区域之间，划线区域为 通过使用遮光图案限定，以及未限定遮光图案的狭缝，狭缝被限定为围绕芯片图案区域。
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