公开(公告)号：US07663220B2

公开(公告)日：2010-02-16

申请号：US10597136

申请日：2004-11-30

申请人： Kenji Kitamura ,  Shinichi Yataka ,  Takao Endo ,  Yuujiro Tominaga ,  Toshihide Tanaka ,  Koichiro Sato

发明人： Kenji Kitamura ,  Shinichi Yataka ,  Takao Endo ,  Yuujiro Tominaga ,  Toshihide Tanaka ,  Koichiro Sato

IPC分类号： H01L23/52 ,  H01L23/34

CPC分类号： H01L29/7811 ,  H01L23/051 ,  H01L23/3171 ,  H01L23/3735 ,  H01L23/585 ,  H01L24/45 ,  H01L24/48 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/8611 ,  H01L2224/40 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A semiconductor module includes: a semiconductor element (13) having a working unit (11) and a guard ring unit (12); and heat radiation members (15, 14) arranged on an upper surface and a lower surface of the semiconductor element for cooling the semiconductor element. A passivation film (20) covers the guard ring but does not cover the working unit. The upper heat radiation member (15) is made of a flat metal plate connected to the working unit without contact with the passivation film. The upper heat radiation member is connected to the lower heat radiation member (14) in the thermo-conducting way.

摘要翻译： 半导体模块包括：具有工作单元（11）和保护环单元（12）的半导体元件（13）; 以及布置在半导体元件的上表面和下表面上用于冷却半导体元件的散热构件（15,14）。 钝化膜（20）覆盖保护环，但不覆盖工作单元。 上部散热构件（15）由连接到工作单元的平坦金属板制成，而不与钝化膜接触。 上部散热构件以热传导方式连接到下部散热构件（14）。

公开(公告)号：US20070138596A1

公开(公告)日：2007-06-21

申请号：US10597136

申请日：2004-11-30

申请人： Kenji Kitamura ,  Shinichi Yataka ,  Takao Endo ,  Yuujiro Tominaga ,  Toshihide Tanaka ,  Koichiro Sato

发明人： Kenji Kitamura ,  Shinichi Yataka ,  Takao Endo ,  Yuujiro Tominaga ,  Toshihide Tanaka ,  Koichiro Sato

IPC分类号： H01L27/082 ,  H01L29/76 ,  H01L21/332

CPC分类号： H01L29/7811 ,  H01L23/051 ,  H01L23/3171 ,  H01L23/3735 ,  H01L23/585 ,  H01L24/45 ,  H01L24/48 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/8611 ,  H01L2224/40 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A semiconductor module includes: a semiconductor element (13) having a working unit (11) and a guard ring unit (12); and heat radiation members (15, 14) arranged on an upper surface and a lower surface of the semiconductor element for cooling the semiconductor element. A passivation film (20) covers the guard ring but does not cover the working unit. The upper heat radiation member (15) is made of a flat metal plate connected to the working unit without contact with the passivation film. The upper heat radiation member is connected to the lower heat radiation member (14) in the thermo-conducting way.

摘要翻译： 半导体模块包括：具有工作单元（11）和保护环单元（12）的半导体元件（13）; 以及布置在半导体元件的上表面和下表面上用于冷却半导体元件的散热构件（15,14）。 钝化膜（20）覆盖保护环，但不覆盖工作单元。 上部散热构件（15）由连接到工作单元的平坦金属板制成，而不与钝化膜接触。 上部散热构件以热传导方式连接到下部散热构件（14）。

公开(公告)号：US08530930B2

公开(公告)日：2013-09-10

申请号：US13238490

申请日：2011-09-21

申请人： Shinichi Yataka ,  Masatoshi Goto

发明人： Shinichi Yataka ,  Masatoshi Goto

IPC分类号： H01L29/66

CPC分类号： H01L29/7395 ,  H01L24/05 ,  H01L29/0696 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/4847 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00

摘要： In a semiconductor device including a plurality of insulated gate switching cells each of which has a gate electrode, an emitter electrode that is commonly provided to cover the plurality of insulated gate switching cells, and a bonding wire connected to the emitter electrode, a gate driving voltage being applied to the gate electrode of each insulated gate switching cell so that emitter current flows through the emitter electrode, mutual conductance of each insulated gate switching cell is varied in accordance with the distance from the connection portion corresponding to the bonding position of the bonding wire so that the emitter current flowing through the emitter electrode is substantially equal among the plurality of insulated gate switching cells.

摘要翻译： 在包括多个绝缘栅极开关单元的半导体器件中，每个绝缘栅极开关单元具有栅极电极，通常设置为覆盖多个绝缘栅极开关单元的发射极电极和连接到发射极电极的接合线，栅极驱动 电压被施加到每个绝缘栅极开关单元的栅电极，使得发射极电流流过发射极，每个绝缘栅极开关单元的互导根据对应于键合位置的连接部分的距离而变化 使得在多个绝缘栅极开关单元之间流过发射极的发射极电流基本相等。

公开(公告)号：US20120091502A1

公开(公告)日：2012-04-19

申请号：US13238490

申请日：2011-09-21

申请人： Shinichi Yataka ,  Masatoshi Goto

发明人： Shinichi Yataka ,  Masatoshi Goto

IPC分类号： H01L29/739 ,  H01L21/331

CPC分类号： H01L29/7395 ,  H01L24/05 ,  H01L29/0696 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/4847 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00

摘要： In a semiconductor device including a plurality of insulated gate switching cells each of which has a gate electrode, an emitter electrode that is commonly provided to cover the plurality of insulated gate switching cells, and a bonding wire connected to the emitter electrode, a gate driving voltage being applied to the gate electrode of each insulated gate switching cell so that emitter current flows through the emitter electrode, mutual conductance of each insulated gate switching cell is varied in accordance with the distance from the connection portion corresponding to the bonding position of the bonding wire so that the emitter current flowing through the emitter electrode is substantially equal among the plurality of insulated gate switching cells.

摘要翻译： 在包括多个绝缘栅极开关单元的半导体器件中，每个绝缘栅极开关单元具有栅极电极，通常设置为覆盖多个绝缘栅极开关单元的发射极电极和连接到发射极电极的接合线，栅极驱动 电压被施加到每个绝缘栅极开关单元的栅电极，使得发射极电流流过发射极，每个绝缘栅极开关单元的互导根据对应于键合位置的连接部分的距离而变化 使得在多个绝缘栅极开关单元之间流过发射极的发射极电流基本相等。