公开(公告)号：US20230019111A1

公开(公告)日：2023-01-19

申请号：US17956293

申请日：2022-09-29

Applicant: KIOXIA CORPORATION

Inventor： Kosuke TAKAI

IPC: B08B3/04

Abstract: A substrate processing apparatus of an embodiment includes a nozzle plate and a support configured to support a substrate at a predetermined distance from the nozzle plate with a first surface of the substrate facing the nozzle plate. A processing liquid supply unit is configured to supply a processing liquid to a second surface of the substrate that is opposite to the first surface. A first supply unit is configured to supply a first fluid from a first supply port in the nozzle plate. A second supply unit is configured to supply a second fluid from a second supply port closer to a outer edge of the nozzle plate than the first supply port.

公开(公告)号：US20220299870A1

公开(公告)日：2022-09-22

申请号：US17467016

申请日：2021-09-03

Applicant: Kioxia Corporation

Inventor： Kosuke TAKAI ,  Shingo KANAMITSU ,  Noriko SAKURAI

IPC: G03F7/00 ,  B21D22/02 ,  H01J37/317

Abstract: A template according to the present embodiment is a template used in a lithography process of a semiconductor manufacturing process. A first substrate includes a first face, a second face protruded from a portion of the first face, and a lateral face being a lateral face positioned between the second face and the first face and inclined with respect to the second face at a connection portion to the second face. A first material film is provided at least on the lateral face.

公开(公告)号：US20210302830A1

公开(公告)日：2021-09-30

申请号：US17016546

申请日：2020-09-10

Applicant: Kioxia Corporation

Inventor： Kosuke TAKAI ,  Kazuhiro TAKAHATA ,  Akihiko ANDO

IPC: G03F7/00 ,  B29C33/38

Abstract: A method of manufacturing a template, includes: covering a part of a first region of a substrate; processing another part of the first region to form a first pattern including a protrusion; covering the first region; and processing at least part of a second region of the substrate to form a second pattern including a depression.

公开(公告)号：US20240427228A1

公开(公告)日：2024-12-26

申请号：US18740794

申请日：2024-06-12

Applicant: Kioxia Corporation

Inventor： Kosuke TAKAI ,  Katsuyoshi KODERA

IPC: G03F1/26 ,  G03F1/48 ,  G03F1/80

Abstract: A photomask blank includes a substrate, a first transmittance adjusting film provided on the substrate, a phase shifter film provided on the first transmittance adjusting film, and a second transmittance adjusting film provided on the phase shifter film. When light having a wavelength transmits through the phase shifter film, a phase of the light transmitted through the phase shifter film and the first transmittance adjusting film is different from a phase of light passed through atmosphere with about 180 degrees, and a phase of the light transmitted through the phase shifter film and the second transmittance adjusting film is different from a phase of the light passed through the atmosphere with about 180 degrees.

公开(公告)号：US20230089980A1

公开(公告)日：2023-03-23

申请号：US17694290

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Noriko SAKURAI ,  Kosuke TAKAI

IPC: G03F7/00 ,  H01L21/027 ,  H01J37/317

Abstract: According to one embodiment, a pattern forming method includes forming an organic film on a processing target material, the organic film comprising a convex part and a remaining film part adjacent to the convex part and thinner than the convex part. The method further includes irradiating the organic film with an electron beam to decrease a dry etching rate of the organic film. The method further includes removing the remaining film part by dry etching of the organic film. The method further includes forming a pattern on the processing target material by dry etching using the organic film from which the remaining film part has been removed as a mask.

公开(公告)号：US20220302024A1

公开(公告)日：2022-09-22

申请号：US17470529

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Yasuhito YOSHIMIZU ,  Kaori UMEZAWA ,  Kosuke TAKAI

IPC: H01L23/522 ,  H01L27/11582 ,  H01L27/11556 ,  H01L29/423 ,  H01L23/00 ,  H01L21/033

Abstract: A semiconductor device includes a substrate, a first stacked film and a second stacked film each including insulating layers and electrode layers alternately provided on the substrate, and columnar portions provided in the insulating layers and electrode layers of the first stacked film, and including charge storage layers and semiconductor layers. The second stacked film further includes an insulator including first and second lower faces, the first lower face is inclined by a first angle to an upper face of one of the electrode layers in the first stacked film, the second lower face is inclined by a second angle to the upper face of the one of the electrode layers in the first stacked film, and the second angle is less than the first angle. The insulating layers and electrode layers in the second stacked film are provided below the first and second lower faces of the insulator.

公开(公告)号：US20210294225A1

公开(公告)日：2021-09-23

申请号：US17184442

申请日：2021-02-24

Applicant: KIOXIA CORPORATION

Inventor： Keiko MORISHITA ,  Kosuke TAKAI

IPC: G03F7/20 ,  H01L21/027

Abstract: According to one embodiment, a pattern inspection method includes detecting a region of a photomask having a pattern that differs from a corresponding design, acquiring an exposure focus shift information including an exposure focus shift amount of a portion of a substrate corresponding to the detected region of the photomask. The exposure focus shift amount for the detected region is acquired from the exposure focus shift information, and then a pass/fail determination for the detected region is performed based on an estimated pattern to be formed on the substrate.

公开(公告)号：US20210048739A1

公开(公告)日：2021-02-18

申请号：US16804826

申请日：2020-02-28

Applicant: KIOXIA CORPORATION

Inventor： Yukio OPPATA ,  Kosuke TAKAI

IPC: G03F1/32

Abstract: A method for manufacturing a photomask includes obtaining a substrate on which a halftone film, a light-shielding film, and a resist film are stacked, irradiating a first region of the resist film at a first dose and a second region of the resist film that surrounds the first region at a second dose greater than the first dose, developing the resist film in the first region to form a mask pattern while leaving the resist film in the second region to form a mask frame pattern, and then patterning the light-shielding film using the mask pattern formed in the resist film.

公开(公告)号：US20240096653A1

公开(公告)日：2024-03-21

申请号：US18469619

申请日：2023-09-19

Applicant: SHIBAURA MECHATRONICS CORPORATION ,  KIOXIA CORPORATION

Inventor： Kensuke DEMURA ,  Satoshi NAKAMURA ,  Masaya KAMIYA ,  Minami NAKAMURA ,  Kosuke TAKAI ,  Mana TANABE ,  Kaori UMEZAWA

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67109 ,  H01L21/68764

Abstract: According to one embodiment a substrate treatment apparatus incorporates, into a frozen film, a contaminant adhered to a substrate surface by freezing a liquid film on the surface. The apparatus includes a placement part configured to rotate the substrate, a liquid supply part configured to supply a liquid via a nozzle to the frozen film including the contaminant, a moving part configured to move the nozzle parallel to the substrate surface, and a controller configured to control a rotation of the substrate by the placement part, a supply of the liquid by the liquid supply part, and a movement of the nozzle by the moving part. The controller rotates the substrate by controlling the placement part, supplies the liquid to the frozen film by controlling the liquid supply part, and moves the nozzle from a perimeter edge vicinity to a rotation center vicinity of the substrate by controlling the moving part.

公开(公告)号：US20240096652A1

公开(公告)日：2024-03-21

申请号：US18333572

申请日：2023-06-13

Applicant: Kioxia Corporation

Inventor： Mana TANABE ,  Kaori UMEZAWA ,  Kosuke TAKAI

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68764

Abstract: According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.