SEMICONDUCTOR DEVICE AND TEMPLATE

    公开(公告)号:US20220013470A1

    公开(公告)日:2022-01-13

    申请号:US17179697

    申请日:2021-02-19

    Abstract: A semiconductor device includes: a semiconductor substrate having a first surface; a device area that is formed on the semiconductor substrate and includes a semiconductor element; and a conductive member that surrounds the device area and extends in a first direction perpendicularly intersecting the first surface. The conductive member is formed on the semiconductor substrate, and includes a first pattern and a second pattern, the second pattern overlapping the first pattern in the first direction. A pitch of the first pattern in a second direction intersecting the first direction is different from a pitch of the second pattern in the second direction.

    DESIGN PATTERN GENERATION METHOD, TEMPLATE, AND METHOD FOR MANUFACTURING TEMPLATE

    公开(公告)号:US20220308456A1

    公开(公告)日:2022-09-29

    申请号:US17472334

    申请日:2021-09-10

    Abstract: A design pattern generation method of an embodiment is a method for generating a design pattern of a template. The design pattern generation method includes: generating an actual pattern including a first pattern protruding from a contact surface of the template with a material layer and extending in a predetermined direction along the contact surface, and a second pattern further protruding from an upper surface of the first pattern; calculating a volume of the first pattern and the second pattern per unit area on the contact surface; and adding, when a difference in the volume of the first pattern and the second pattern per unit area between regions on the contact surface exceeds a specified value, a third pattern to a region where the volume of the first pattern and the second pattern per unit area is small.

    ALIGNMENT MARK AND IMPRINTING METHOD
    3.
    发明公开

    公开(公告)号:US20240203894A1

    公开(公告)日:2024-06-20

    申请号:US18460820

    申请日:2023-09-05

    Abstract: According to one embodiment, an alignment mark includes a first mark arranged in a first film having optical transparency of a first substrate on which a device is manufactured; a second mark that is arranged in a second substrate having a first pattern to be transferred to the first substrate side, and is used for alignment with the first mark; and a second pattern that is arranged in at least any of the first and second substrates at a position overlapping a peripheral region of the first mark when viewed from the second substrate side, the first substrate and the second substrate being arranged at positions where the first and second marks vertically overlap each other, in which the second pattern has a random dimensional distribution.

    TEMPLATE, TEMPLATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

    公开(公告)号:US20220080627A1

    公开(公告)日:2022-03-17

    申请号:US17199967

    申请日:2021-03-12

    Abstract: According to one embodiment, a template is provided with a transferring pattern on a first surface of a substrate. The transferring pattern includes a first projecting portion that projects from the first surface with a first height and extends in a first direction along the first surface, a second projecting portion that projects from the first surface with a second height higher than the first height and extends in a second direction along the first surface, a first columnar portion that is arranged at a position overlapping with the first projecting portion and has a top surface with a third height higher than the second height as a height from the first surface, and a second columnar portion that is arranged at a position overlapping with the second projecting portion and has a top surface with the third height as a height from the first surface.

    TEMPLATE, METHOD OF MANUFACTURING TEMPLATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20220084877A1

    公开(公告)日:2022-03-17

    申请号:US17447025

    申请日:2021-09-07

    Abstract: According to one embodiment, there is provided a template including: a substrate having a first surface; a trench that is recessed from the first surface at a predetermined depth and extends along the first surface in a first direction, the trench includes a first portion having a second width in a second direction intersecting with the first direction and a second portion having a third width in the second direction; and a hole that is arranged is the first portion of the trench and extends from a bottom surface of the trench, and the first width is smaller than the second width, and the third width is smaller than the first width.

    PATTERN DESIGN METHOD, TEMPLATE MANUFACTURING METHOD, AND PATTERN DESIGN APPARATUS

    公开(公告)号:US20240316915A1

    公开(公告)日:2024-09-26

    申请号:US18598201

    申请日:2024-03-07

    CPC classification number: B41C1/10 G03F7/0002 G06F30/392

    Abstract: A pattern design method according to an embodiment is a method to design a pattern of a template used for an imprint process. The imprint process serves to form a predetermined pattern by pressing a shot surface of the template against a surface of a processed layer. The method includes setting an outer edge coverage range corresponding to an outer edge region located a predetermined distance inside an edge of the shot surface of the template. The outer edge coverage range is set to be different from an inner coverage range corresponding to an inner region inside the outer edge region. The method includes designing a pattern in the outer edge region to have a coverage falling within the outer edge coverage range. The method includes designing a pattern in the inner region to have a coverage falling within the inner coverage range.

    TEMPLATE, MANUFACTURING METHOD OF TEMPLATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

    公开(公告)号:US20220301908A1

    公开(公告)日:2022-09-22

    申请号:US17471038

    申请日:2021-09-09

    Abstract: According to the embodiment, the template includes: a first substrate; a pattern projected from a principal surface of the first substrate; a first mark projected from the principal surface of the first substrate, the first mark surrounding a recessed portion disposed in an inside region of the first mark; and a second mark recessed from the principal surface of the first substrate; wherein the first mark is provided with, in a planar view, an inner portion having a pair of first sides opposed to each other and a pair of second sides opposed to each other, the first sides extending in a first direction along the first substrate, the second sides extending in a second direction intersecting with the first direction along the first substrate, the inner portion surrounding the recessed portion of the first mark, and an outer portion having a pair of third sides opposed to each other and a pair of fourth sides opposed to each other, the third sides extending in the first direction, the fourth sides extending in the second direction, the outer portion being an outer edge portion of the first mark.

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