公开(公告)号：US07264918B2

公开(公告)日：2007-09-04

申请号：US10546529

申请日：2004-03-24

申请人： Kotaro Endo ,  Masaaki Yoshida ,  Taku Hirayama ,  Hiromitsu Tsuji ,  Toshiyuki Ogata ,  Mitsuru Sato

发明人： Kotaro Endo ,  Masaaki Yoshida ,  Taku Hirayama ,  Hiromitsu Tsuji ,  Toshiyuki Ogata ,  Mitsuru Sato

IPC分类号： G03F7/039 ,  G03F7/11 ,  G03F7/207 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0395 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

摘要： A resist composition for liquid immersion lithography process, which comprises: (A) a polymer comprising (a1) alkali-soluble constitutional units each comprising an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, wherein the polymer changes in alkali-solubility due to the action of acid; and (B) an acid generator which generates acid due to exposure to light, and a method for forming a resist pattern using the resist composition. By the resist composition or the method, an adverse effect of the immersion liquid can be avoided while achieving high resolution and high depth of focus.

摘要翻译： 一种用于液浸光刻工艺的抗蚀剂组合物，其包括：（A）包含（a1）碱可溶性结构单元的聚合物，其各自包含具有（i）氟原子或氟代烷基的脂环族基团和（ii）醇羟基 基团，其中聚合物由于酸的作用而改变碱溶解度; 和（B）由于曝光而产生酸的酸发生剂，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法。 通过抗蚀剂组合物或方法，可以避免浸渍液体的不利影响，同时实现高分辨率和高焦度聚焦。

公开(公告)号：US20060154170A1

公开(公告)日：2006-07-13

申请号：US10546529

申请日：2004-03-24

申请人： Kotaro Endo ,  Masaaki Yoshida ,  Taku Hirayama ,  Hiromitsu Tsuji ,  Toshiyuki Ogata ,  Mitsuru Sato

发明人： Kotaro Endo ,  Masaaki Yoshida ,  Taku Hirayama ,  Hiromitsu Tsuji ,  Toshiyuki Ogata ,  Mitsuru Sato

IPC分类号： G03C1/76

CPC分类号： G03F7/0395 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

摘要： A resist composition for liquid immersion lithography process, which comprises: (A) a polymer comprising (a1) alkali-soluble constitutional units each comprising an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, wherein the polymer changes in alkali-solubility due to the action of acid; and (B) an acid generator which generates acid due to exposure to light, and a method for forming a resist pattern using the resist composition. By the resist composition or the method, an adverse effect of the immersion liquid can be avoided while achieving high resolution and high depth of focus.

摘要翻译： 一种用于液浸光刻工艺的抗蚀剂组合物，其包括：（A）包含（a1）碱可溶性结构单元的聚合物，其各自包含具有（i）氟原子或氟代烷基的脂环族基团和（ii）醇羟基 基团，其中聚合物由于酸的作用而改变碱溶解度; 和（B）由于曝光而产生酸的酸发生剂，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法。 通过抗蚀剂组合物或方法，可以避免浸渍液体的不利影响，同时实现高分辨率和高焦度聚焦。

公开(公告)号：US07592122B2

公开(公告)日：2009-09-22

申请号：US10553315

申请日：2004-04-15

申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Mitsuru Sato ,  Syogo Matsumaru ,  Hideo Hada

发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Mitsuru Sato ,  Syogo Matsumaru ,  Hideo Hada

IPC分类号： G03F7/004 ,  C08C19/28

CPC分类号： C07C43/126 ,  C07C43/162 ,  C07C43/1747 ,  C07C69/96 ,  C07C2601/14 ,  C07C2602/42 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  Y10S430/108

摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.

摘要翻译： 具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。 光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

公开(公告)号：US20060210913A1

公开(公告)日：2006-09-21

申请号：US10553315

申请日：2004-04-15

申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Mitsuru Sato ,  Syogo Matsumaru ,  Hideo Hada

发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Mitsuru Sato ,  Syogo Matsumaru ,  Hideo Hada

IPC分类号： G03C1/76

CPC分类号： C07C43/126 ,  C07C43/162 ,  C07C43/1747 ,  C07C69/96 ,  C07C2601/14 ,  C07C2602/42 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  Y10S430/108

摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.

摘要翻译： 具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。 光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

公开(公告)号：US07326512B2

公开(公告)日：2008-02-05

申请号：US10501459

申请日：2003-11-28

申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

IPC分类号： G03F7/039 ,  C08F18/20 ,  C08F214/18 ,  C08F14/18

CPC分类号： G03F7/0046 ,  C08F20/22 ,  G03F7/0397 ,  Y10S430/108

摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound.To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

摘要翻译： 提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。 为了确保耐蚀刻性，将脂环族基团引入侧链部分。 脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。 作为脂环基，优选使用多环基。 通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。 抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

公开(公告)号：US20050130056A1

公开(公告)日：2005-06-16

申请号：US10501459

申请日：2003-11-28

申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

IPC分类号： C08F16/24 ,  C08F20/22 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C1/494

CPC分类号： G03F7/0046 ,  C08F20/22 ,  G03F7/0397 ,  Y10S430/108

摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

摘要翻译： 提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。 为了确保耐蚀刻性，将脂环族基团引入侧链部分。 脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。 作为脂环基，优选使用多环基。 通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。 抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

公开(公告)号：US20070190447A1

公开(公告)日：2007-08-16

申请号：US10589382

申请日：2005-02-01

申请人： Toshiyuki Ogata ,  Takuma Hojo ,  Hiromitsu Tsuji ,  Takako Hirosaki ,  Mitsuru Sato

发明人： Toshiyuki Ogata ,  Takuma Hojo ,  Hiromitsu Tsuji ,  Takako Hirosaki ,  Mitsuru Sato

IPC分类号： G03C1/00

CPC分类号： G03F7/0045 ,  B82Y30/00 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397

摘要： The photoresist composition is formed by including the fullerene derivative (A) having two or more malonic ester residues. Preferably, the malonic ester residue is, a group is preferably expressed by the general formula (1) below. In the formula (1), R1 and R2 independently represent an alkyl group, which may be identical or different from each other. The alkyl group is a normal or branched chain, or cyclic alkyl group having 1 to 10 carbons, and n is an integer from 2 to 10.

摘要翻译： 通过包含具有两个或多个丙二酸酯残基的富勒烯衍生物（A）形成光致抗蚀剂组合物。 优选地，丙二酸酯残基是一个基团优选由下面通式（1）表示。 在式（1）中，R 1和R 2独立地表示可以相同或不同的烷基。 烷基是碳原子数为1〜10的正，支链或环状烷基，n为2〜10的整数。

公开(公告)号：US20070178394A1

公开(公告)日：2007-08-02

申请号：US11621896

申请日：2007-01-10

申请人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Hideo Hada ,  Satoshi Fujimura ,  Takeshi Iwai ,  Mitsuru Sato ,  Ryoichi Takasu ,  Toshikazu Tachikawa ,  Jun Iwashita ,  Keita Ishiduka ,  Tomotaka Yamada ,  Toshikazu Takayama ,  Masaaki Yoshida

IPC分类号： G03C5/00

CPC分类号： G03F7/70616 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/70341 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

摘要翻译： 提供了相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。 抗蚀剂组合物是根据预定参数，或是包含含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物，酸产生剂组分（B） 和有机溶剂（C），其中，成分（A）含有来自含有酸解离性，溶解抑制基团但不含结构单元（a0）的（甲基）丙烯酸酯的结构单元（a1） 含有二羧酸的酸酐的单元（a0-1）和含有酚羟基的结构单元（a0-2）。

公开(公告)号：US20070134593A1

公开(公告)日：2007-06-14

申请号：US11702602

申请日：2007-02-06

申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

IPC分类号： G03C1/00

CPC分类号： G03F7/2041 ,  G03F7/11

摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

公开(公告)号：US20060154188A1

公开(公告)日：2006-07-13

申请号：US10547525

申请日：2004-03-04

申请人： Taku Hirayama ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Jyun Iwashita ,  Masaaki Yoshida

发明人： Taku Hirayama ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Jyun Iwashita ,  Masaaki Yoshida

IPC分类号： G03C1/73

CPC分类号： G03F7/2041

摘要： An immersion fluid for use in liquid immersion lithography in which a resist film is exposed to light via a fluid. The fluid is transparent to the exposure light used in the liquid immersion lithography and comprises a fluorine-based liquid having a boiling point of 70 to 270° C. A method of forming resist patter includes a step of placing the immersion fluid directly on the resist film or a protective film deposited on the resist film. The present invention prevents alteration of resist film and other films as well as alteration of the fluid during liquid immersion lithography and enables high resolution resist patterning using liquid immersion lithography.

摘要翻译： 一种用于液浸光刻中的浸液，其中抗蚀剂膜经由流体暴露于光。 流体对于液浸光刻中使用的曝光是透明的，并且包括沸点为70〜270℃的氟系液体。形成抗蚀剂图案的方法包括将浸渍流体直接放置在抗蚀剂上的步骤 膜或保护膜沉积在抗蚀剂膜上。 本发明防止了在液浸光刻过程中抗蚀剂膜和其它膜的变化以及流体的改变，并且能够使用液浸式光刻法进行高分辨抗蚀剂图案化。