摘要:
A sample separation and adsorption appliance (100) includes a negative electrode (2), a positive electrode (3), a sample separation unit (6) that has a first opening (17) opened to a side facing the negative electrode (2) and a second opening (18) opened to a side facing the positive electrode (3), the sample separation unit containing a separation gel (7), and a slit structure (8) including a slit (1) at a position facing the second opening (18). A transfer film (9) is arranged between the second opening (18) and the slit (1).
摘要:
A sample separation and adsorption appliance (100) includes a negative electrode (2), a positive electrode (3), a sample separation unit (6) that has a first opening (17) opened to a side facing the negative electrode (2) and a second opening (18) opened to a side facing the positive electrode (3), the sample separation unit containing a separation gel (7), and a slit structure (8) including a slit (1) at a position facing the second opening (18). A transfer film (9) is arranged between the second opening (18) and the slit (1).
摘要:
A solution ejecting method includes a first ejection step of ejecting an electrophoresis-gel-forming monomer solution containing at least a monomer that forms a gel structure and a gel polymerization accelerator that activates a gel polymerization initiator and a second ejection step of ejecting a gel polymerization initiating solution containing the gel polymerization initiator onto the electrophoresis-gel-forming monomer solution.
摘要:
A production method of the present invention is a method of producing a reaction instrument for electrophoresis (10), which is constituted by (i) a substrate (1) and (ii) an electrophoresis gel (3) which is immobilized on the substrate (1), including the steps of: (i) discharging a liquid to a surface of the substrate (1) on which surface the gel is to be immobilized, thereby forming a liquid pool (5); and thereafter (ii) discharging a gel solution to the liquid pool (5). This provides a method of producing a reaction instrument for electrophoresis, which method makes it possible to form a gel with high reliability in high yield.
摘要:
A 1,2,4,5-substituted phenyl compound represented by the formula (1): wherein one of X1-X5 is nitrogen and the remainders of X1-X5 are carbon; R1 and R2 represent hydrogen, C1-6 alkyl or C1-6 alkoxy; R3 and R4 represent C1-6 alkyl or C1-6 alkoxy; and m is an integer of 0-4, and n is an integer of 0-5. This compound is useful as a constituent for an organic electroluminescent device.
摘要:
In a print system, print data and print setting information are transmitted from a terminal to a printing apparatus via an email, and the printing apparatus performs a printing process of the print data based on the print setting information. The printing apparatus includes: a first receiving unit that receives a print request email from the terminal; a transmission unit that transmits, to the terminal, a reply email that includes allowable print setting information representing information on designable print settings; and a second receiving unit that receives a second reply email having been transmitted from the terminal and including print setting information designated from among the allowable print setting information.
摘要:
A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.
摘要:
A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.
摘要:
A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.