公开(公告)号：US11417774B2

公开(公告)日：2022-08-16

申请号：US17154852

申请日：2021-01-21

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US12034082B2

公开(公告)日：2024-07-09

申请号：US17029889

申请日：2020-09-23

Applicant: LG Display Co., Ltd.

Inventor： JeongSuk Yang ,  KwangMin Jo ,  Sohyung Lee

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  H10K59/121 ,  H10K59/124

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L29/6675 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/7869 ,  H10K59/1213 ,  H10K59/124

Abstract: An embodiment of the present disclosure provides a thin film transistor, a method of manufacturing the thin film transistor and a display apparatus including the thin film transistor. The thin film transistor includes an active layer on a substrate, a gate electrode disposed apart from the active layer to at least partially overlap the active layer, and a gate insulation layer between the active layer and the gate electrode. The gate insulation layer can cover an entire top surface of the active layer facing the gate electrode. The active layer can include a channel part overlapping the gate electrode, a conductivity-providing part which does not overlap the gate electrode, and an offset part between the channel part and the conductivity-providing part. The offset part may not overlap the gate electrode, and the conductivity-providing part can be doped with a dopant.

公开(公告)号：US11508306B2

公开(公告)日：2022-11-22

申请号：US17119265

申请日：2020-12-11

Applicant: LG Display Co., Ltd.

Inventor： JeongSuk Yang ,  YongSeok Park

IPC: G09G3/3258 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786

Abstract: A display apparatus can include a first thin film transistor and a second thin film transistor, the first thin film transistor has a bottom gate structure, the second thin film transistor has a top gate structure, and an s-factor value of the first thin film transistor is smaller than an s-factor value of the second thin film transistor.

公开(公告)号：US11705465B2

公开(公告)日：2023-07-18

申请号：US17122915

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： JeongSuk Yang ,  Sunggu Kim

IPC: H01L27/12 ,  H10K59/121 ,  H10K71/00 ,  H10K59/12

CPC classification number: H01L27/1288 ,  H01L27/127 ,  H01L27/1225 ,  H01L27/1255 ,  H10K59/1213 ,  H10K71/00 ,  H10K59/1201

Abstract: A display apparatus comprises a first signal line on a substrate, a second signal line intersecting with the first signal line, a first gate electrode, a first source electrode, a first drain electrode, and a second gate electrode disposed on the same layer as that of the first signal line, a first active layer spaced apart from the first gate electrode and partially overlapped with the first gate electrode, a second active layer spaced apart from the second gate electrode and partially overlapped with the second gate electrode, and a first electrode of a display device connected with the second active layer.

公开(公告)号：US10930790B2

公开(公告)日：2021-02-23

申请号：US15994765

申请日：2018-05-31

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US12249655B2

公开(公告)日：2025-03-11

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US11817509B2

公开(公告)日：2023-11-14

申请号：US17394204

申请日：2021-08-04

Applicant: LG Display Co., Ltd.

Inventor： JeongSuk Yang

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/426 ,  H01L29/66 ,  G09G3/3233

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L21/426 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78603 ,  G09G3/3233 ,  G09G2300/0842

Abstract: A thin film transistor includes an active layer, a gate electrode spaced apart from and partially overlapped with the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes a channel portion overlapped with the gate electrode, a conductorization portion which is not overlapped with the gate electrode, and a gradient portion between the channel portion and the conductorization portion and not overlapped with the gate electrode, the conductorization portion and the gradient portion of the active layer are doped with a dopant, the gate insulating film covers an upper surface of the active layer facing the gate electrode during doping of the active layer, and in the gradient portion, a concentration of the dopant increases along a direction from the channel portion toward the conductorization portion. A display device may also include the thin film transistor.

公开(公告)号：US11791418B2

公开(公告)日：2023-10-17

申请号：US17859946

申请日：2022-07-07

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417 ,  G09G3/3291

CPC classification number: H01L29/7869 ,  G09G3/3266 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0245 ,  G09G2310/08

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20210193045A1

公开(公告)日：2021-06-24

申请号：US17119265

申请日：2020-12-11

Applicant: LG Display Co., Ltd.

Inventor： JeongSuk Yang ,  YongSeok Park

IPC: G09G3/3258 ,  H01L29/786 ,  H01L51/56 ,  H01L27/32

Abstract: Discussed is a display apparatus and a method for manufacturing the same, wherein the display apparatus comprises a first thin film transistor and a second thin film transistor, the first thin film transistor has a bottom gate structure, the second thin film transistor has a top gate structure, and an s-factor value of the first thin film transistor is smaller than an s-factor value of the second thin film transistor.