公开(公告)号：US07829469B2

公开(公告)日：2010-11-09

申请号：US11608889

申请日：2006-12-11

申请人： Lee Chen ,  Hiromasa Mochiki

发明人： Lee Chen ,  Hiromasa Mochiki

IPC分类号： H01L21/302

CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3233 ,  H01J37/32587

摘要： A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A ring electrode, provided about a periphery of the substrate and opposite the electron source electrode, is utilized to create a ring hollow cathode plasma to affect changes in the distribution of plasma density.

摘要翻译： 描述了用于调整和控制等离子体处理系统中的等离子体均匀性的方法和系统。 等离子体处理系统包括电子源电极，直流电（DC）功率被耦合到其中，以便在衬底的蚀刻期间产生弹道电子束。 利用设置在基板的周边并且与电子源电极相对的环形电极来产生环空心阴极等离子体，以影响等离子体密度分布的变化。

公开(公告)号：US07709397B2

公开(公告)日：2010-05-04

申请号：US10852685

申请日：2004-05-25

申请人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama ,  Akiteru Ko ,  Hiromasa Mochiki ,  Masaaki Hagihara

发明人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama ,  Akiteru Ko ,  Hiromasa Mochiki ,  Masaaki Hagihara

IPC分类号： H01L21/302

CPC分类号： H01L21/31122

摘要： A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise HfO2. The method comprises elevating the temperature of the substrate above 200° C. (i.e., typically of order 400° C.), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of HfO2 relative to Si and SiO2.

摘要翻译： 描述了在等离子体处理系统中蚀刻衬底上的高k电介质层的方法。 高k电介质层可以例如包含HfO 2。 该方法包括将衬底的温度升高到200℃以上（即，通常为400℃），引入包含含卤素气体的工艺气体，从工艺气体点燃等离子体，并将衬底暴露于 等离子体。 工艺气体可以进一步包括还原气体，以便提高HfO 2相对于Si和SiO 2的蚀刻速率。

公开(公告)号：US20050164511A1

公开(公告)日：2005-07-28

申请号：US10852685

申请日：2004-05-25

申请人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama ,  Akiteru Ko ,  Hiromasa Mochiki ,  Masaaki Hagihara

发明人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama ,  Akiteru Ko ,  Hiromasa Mochiki ,  Masaaki Hagihara

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/324 ,  H01L21/336 ,  H01L21/461 ,  H05H1/24

CPC分类号： H01L21/31122

摘要： A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise HfO2. The method comprises elevating the temperature of the substrate above 2000°C. (i.e., typically of order 400° C.), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of HfO2 relative to Si and SiO2.

摘要翻译： 描述了在等离子体处理系统中蚀刻衬底上的高k电介质层的方法。 高k电介质层可以例如包括HfO 2 2。 该方法包括将基板的温度升高到高于2000℃。 （即通常为400℃），引入包含含卤素气体的工艺气体，点燃来自工艺气体的等离子体，并将衬底暴露于等离子体。 工艺气体可以进一步包括还原气体，以便提高HfO 2相对于Si和SiO 2的蚀刻速率。

公开(公告)号：US20080135518A1

公开(公告)日：2008-06-12

申请号：US11608889

申请日：2006-12-11

申请人： Lee Chen ,  Hiromasa Mochiki

发明人： Lee Chen ,  Hiromasa Mochiki

IPC分类号： C03C25/68 ,  C23C16/00 ,  H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3233 ,  H01J37/32587

摘要： A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A ring electrode, provided about a periphery of the substrate and opposite the electron source electrode, is utilized to create a ring hollow cathode plasma to affect changes in the distribution of plasma density.

摘要翻译： 描述了用于调整和控制等离子体处理系统中的等离子体均匀性的方法和系统。 等离子体处理系统包括电子源电极，直流电（DC）功率被耦合到其中，以便在衬底的蚀刻期间产生弹道电子束。 利用设置在基板的周边并且与电子源电极相对的环形电极来产生环空心阴极等离子体，以影响等离子体密度分布的变化。

公开(公告)号：US20090120582A1

公开(公告)日：2009-05-14

申请号：US12266800

申请日：2008-11-07

申请人： Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

发明人： Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

IPC分类号： H01L21/3065

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.

摘要翻译： 处理气体供给单元的喷淋板，设置在基板处理装置的处理室中，以将处理气体供给到处理室中的处理空间。 喷淋板介于形成在处理气体供给单元中的处理气体导入空间，用于引入处理气体和处理空间。 淋浴板包括处理气体供给通道，其允许处理气体引入空间与处理空间通信。 处理气体供给通路包括朝向处理气体导入空间形成的气孔和朝向处理空间形成的气体槽，气体孔和气体槽相互连通。 所有气体槽的总流路横截面面积大于所有气孔的总流路横截面面积。

公开(公告)号：US20100213162A1

公开(公告)日：2010-08-26

申请号：US12707957

申请日：2010-02-18

申请人： Hiromasa Mochiki ,  Yoshinobu Ooya ,  Fumio Yamazaki ,  Toshio Haga

发明人： Hiromasa Mochiki ,  Yoshinobu Ooya ,  Fumio Yamazaki ,  Toshio Haga

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32174 ,  H01J37/32027 ,  H01J37/32091 ,  H01J2237/334

摘要： There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

摘要翻译： 提供了能够通过高速电子获得充分的有机膜修饰效果的等离子体蚀刻方法。 在通过等离子体蚀刻在蚀刻靶膜中形成孔时，通过开启等离子体产生高频电力施加单元和在处理室内不产生等离子体的第二条件，在处理室内产生等离子体的第一条件 通过关闭等离子体产生高频电力应用单元交替重复。 此外，从第一直流电源施加负的直流电压，使得在第二状态的周期期间所施加的负的直流电压的绝对值大于在第一状态期间施加的负的直流电压的绝对值 条件。

公开(公告)号：US20060157445A1

公开(公告)日：2006-07-20

申请号：US11333289

申请日：2006-01-18

申请人： Hiromasa Mochiki

发明人： Hiromasa Mochiki

IPC分类号： B44C1/22 ,  G01R31/00 ,  C03C25/68 ,  G01L21/30

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67253

摘要： Mixing ratio and flow rate of a first gaseous mixture supplied to a central portion of the substrate are set. Subsequently, etching is performed by changing a mixing ratio of a second gaseous mixture supplied to an outer peripheral portion of the substrate while a setting of the first gaseous mixture is fixed, thereby, setting the mixing ratio of the second gaseous mixture based on an etching result to make etching selectivities and shapes at the central portion and the outer peripheral portion of the substrate uniform. Then, etching is performed by changing a flow rate of the second gaseous mixture while settings of the first gaseous mixture and the mixing ratio of the second gaseous mixture are fixed, thereby, setting the flow rate of the second gaseous mixture based on etching results to make etching rates at the central portion and the outer peripheral portion of the substrate uniform.

摘要翻译： 设置供给到基板的中心部分的第一气体混合物的混合比和流量。 随后，通过改变在第一气体混合物的设定被固定的同时提供给基板的外周部分的第二气体混合物的混合比，从而根据蚀刻设定第二气体混合物的混合比来进行蚀刻 导致在基板的中心部分和外周部分处的蚀刻选择性和形状均匀。 然后，在第一气态混合物的设定和第二气体混合物的混合比固定的同时，通过改变第二气态混合物的流量进行蚀刻，从而将基于蚀刻结果的第二气体混合物的流量设定为 使基板的中央部分和外周部分的蚀刻速率均匀。

公开(公告)号：US08383001B2

公开(公告)日：2013-02-26

申请号：US12707957

申请日：2010-02-18

申请人： Hiromasa Mochiki ,  Yoshinobu Ooya ,  Fumio Yamazaki ,  Toshio Haga

发明人： Hiromasa Mochiki ,  Yoshinobu Ooya ,  Fumio Yamazaki ,  Toshio Haga

IPC分类号： B44C1/22

CPC分类号： H01J37/32174 ,  H01J37/32027 ,  H01J37/32091 ,  H01J2237/334

摘要： There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

摘要翻译： 提供了能够通过高速电子获得充分的有机膜修饰效果的等离子体蚀刻方法。 在通过等离子体蚀刻在蚀刻靶膜中形成孔时，通过开启等离子体产生高频电力施加单元和在处理室内不产生等离子体的第二条件，在处理室内产生等离子体的第一条件 通过关闭等离子体产生高频电力应用单元交替重复。 此外，从第一直流电源施加负的直流电压，使得在第二状态的周期期间所施加的负的直流电压的绝对值大于在第一状态期间施加的负的直流电压的绝对值 条件。

公开(公告)号：US07723236B2

公开(公告)日：2010-05-25

申请号：US11333289

申请日：2006-01-18

申请人： Hiromasa Mochiki

发明人： Hiromasa Mochiki

IPC分类号： H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67253

摘要： Mixing ratio and flow rate of a first gaseous mixture supplied to a central portion of the substrate are set. Subsequently, etching is performed by changing a mixing ratio of a second gaseous mixture supplied to an outer peripheral portion of the substrate while a setting of the first gaseous mixture is fixed, thereby, setting the mixing ratio of the second gaseous mixture based on an etching result to make etching selectivities and shapes at the central portion and the outer peripheral portion of the substrate uniform. Then, etching is performed by changing a flow rate of the second gaseous mixture while settings of the first gaseous mixture and the mixing ratio of the second gaseous mixture are fixed, thereby, setting the flow rate of the second gaseous mixture based on etching results to make etching rates at the central portion and the outer peripheral portion of the substrate uniform.

摘要翻译： 设置供给到基板的中心部分的第一气体混合物的混合比和流量。 随后，通过改变在第一气体混合物的设定被固定的同时提供给基板的外周部分的第二气体混合物的混合比，从而根据蚀刻设定第二气体混合物的混合比来进行蚀刻 导致在基板的中心部分和外周部分处的蚀刻选择性和形状均匀。 然后，在第一气态混合物的设定和第二气体混合物的混合比固定的同时，通过改变第二气态混合物的流量进行蚀刻，从而将基于蚀刻结果的第二气体混合物的流量设定为 使基板的中央部分和外周部分的蚀刻速率均匀。

公开(公告)号：US20060049139A1

公开(公告)日：2006-03-09

申请号：US10926404

申请日：2004-08-26

申请人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

发明人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： H01L21/31116 ,  H01L21/32139

摘要： A method and system is described for etching a tunable etch resistant anti-reflective (TERA) coating. The TERA coating can be utilized, for example, as a hard mask, or as an anti-reflective coating for complementing a lithographic structure. The TERA coating can include a structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti, and combinations thereof, and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F. During the formation of a structure in a film stack, a pattern is transferred to the TERA coating using dry plasma etching having a SF6-based etch chemistry.

摘要翻译： 描述了用于蚀刻可调蚀抗蚀抗反射（TERA）涂层的方法和系统。 TERA涂层可以用作例如硬掩模，或作为用于补充光刻结构的抗反射涂层。 TERA涂层可以包括结构式R：C：H：X，其中R选自Si，Ge，B，Sn，Fe，Ti及其组合，并且其中X不存在或被选择 从由O，N，S和F中的一种或多种组成的组中。在膜堆叠中形成结构期间，使用具有SF 6的干等离子体蚀刻将图案转移到TERA涂层， SUB>基蚀刻化学。