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Patent Agency Ranking
公开(公告)号：US20140269074A1
公开(公告)日：2014-09-18
申请号：US13950942
申请日：2013-07-25
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Lung Yi KUO , Hsin Yi Ho , Chun Hsiung Hung , Shuo-Nan Hung , Han-Sung Chen , Shih-Chou Juan
CPC classification number: G11C16/10 , G11C29/808 , G11C29/82 , G11C2029/4402
Abstract: A method for programming a non-volatile memory including a plurality of blocks, each block including a plurality of sections, each section including at least one page, and each page including a plurality of memory cells. The method includes checking a current section of the plurality of sections against a damaged section table to determine whether the current section is damaged. The damaged section table records information about whether a section in the memory is good or damaged. The method further includes using the current section for programming if the current section is not damaged.
Abstract translation: 一种用于编程包括多个块的非易失性存储器的方法，每个块包括多个部分，每个部分包括至少一个页面，并且每个页面包括多个存储器单元。 该方法包括根据损坏部分表检查多个部分的当前部分，以确定当前部分是否损坏。 损坏的部分表记录有关内存中的部分是好还是损坏的信息。 该方法还包括如果当前部分没有损坏，则使用当前部分进行编程。
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公开(公告)号：US20140254257A1
公开(公告)日：2014-09-11
申请号：US14020684
申请日：2013-09-06
Applicant: Macronix International Co., Ltd.
Inventor： Hsin Yi Ho , Ming-Hsiu Lee , Chun Hsiung Hung , Hsiang-Lan Lung , Tien-Yen Wang
IPC: G11C13/00
CPC classification number: G11C13/0004 , G11C13/0033 , G11C2013/0054
Abstract: A method for managing memory includes setting a state of a first memory cell to a first state representing a first data and setting a state of a second memory cell to a second state representing the first data. If the state of the second memory cell has changed to a third state representing a second data different from the first data, the method also includes changing the state of the second memory cell back to the second state.
Abstract translation: 一种用于管理存储器的方法包括将第一存储器单元的状态设置为表示第一数据的第一状态，并将第二存储单元的状态设置为表示第一数据的第二状态。 如果第二存储单元的状态已经改变为表示与第一数据不同的第二数据的第三状态，则该方法还包括将第二存储器单元的状态改变回第二状态。
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公开(公告)号：US09646692B1
公开(公告)日：2017-05-09
申请号：US14965670
申请日：2015-12-10
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Hsiang-Lan Lung , Hsin Yi Ho
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/004 , G11C13/0064 , G11C2013/0042 , G11C2013/0054 , G11C2013/0066 , G11C2013/0071 , G11C2013/0092 , G11C2213/79
Abstract: A memory device includes an array of programmable resistance memory cells, a differential amplifier coupled to the array, and current circuitry providing a program current to the bit line. The differential amplifier senses a voltage difference between a first voltage on a bit line coupled to a memory cell and a reference voltage, and provides a feedback signal in response to the voltage difference. Control circuitry is coupled to the array and the differential amplifier, and configured to execute a program operation to change the memory cell in a first resistance state to a second resistance state, including selecting a voltage level for the reference voltage which correlates with the second resistance state, turning on the current circuitry to apply a program pulse of program current to the memory cell, and enabling the differential amplifier, where the current circuitry turns off the program current in response to the feedback signal.
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公开(公告)号：US09558818B2
公开(公告)日：2017-01-31
申请号：US14020684
申请日：2013-09-06
Applicant: Macronix International Co., Ltd.
Inventor： Hsin Yi Ho , Ming-Hsiu Lee , Chun Hsiung Hung , Hsiang-Lan Lung , Tien-Yen Wang
IPC: G11C13/00
CPC classification number: G11C13/0004 , G11C13/0033 , G11C2013/0054
Abstract: A method for managing memory includes setting a state of a first memory cell to a first state representing a first data and setting a state of a second memory cell to a second state representing the first data. If the state of the second memory cell has changed to a third state representing a second data different from the first data, the method also includes changing the state of the second memory cell back to the second state.
Abstract translation: 一种用于管理存储器的方法包括将第一存储器单元的状态设置为表示第一数据的第一状态，并将第二存储单元的状态设置为表示第一数据的第二状态。 如果第二存储单元的状态已经改变为表示与第一数据不同的第二数据的第三状态，则该方法还包括将第二存储器单元的状态改变回第二状态。
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公开(公告)号：US08947961B2
公开(公告)日：2015-02-03
申请号：US13950942
申请日：2013-07-25
Applicant: Macronix International Co., Ltd.
Inventor： Lung Yi Kuo , Hsin Yi Ho , Chun Hsiung Hung , Shuo-Nan Hung , Han-Sung Chen , Shih-Chou Juan
CPC classification number: G11C16/10 , G11C29/808 , G11C29/82 , G11C2029/4402
Abstract: A method for programming a non-volatile memory including a plurality of blocks, each block including a plurality of sections, each section including at least one page, and each page including a plurality of memory cells. The method includes checking a current section of the plurality of sections against a damaged section table to determine whether the current section is damaged. The damaged section table records information about whether a section in the memory is good or damaged. The method further includes using the current section for programming if the current section is not damaged.
Abstract translation: 一种用于编程包括多个块的非易失性存储器的方法，每个块包括多个部分，每个部分包括至少一个页面，并且每个页面包括多个存储器单元。 该方法包括根据损坏部分表检查多个部分的当前部分，以确定当前部分是否损坏。 损坏的部分表记录有关内存中的部分是好还是损坏的信息。 该方法还包括如果当前部分没有损坏，则使用当前部分进行编程。
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