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公开(公告)号：US20060078188A1
公开(公告)日：2006-04-13
申请号：US11190829
申请日：2005-07-28
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In an automatic defect classifying method, defects not reviewed are assigned with defect classes having the same definitions as those of reviewed defects in order to effectively use information on defects not reviewed, the defects not reviewed occupying most of defects on a wafer. Defects not reviewed are assigned defect classes having the same definitions, by using defect data of defects detected with an inspection equipment and defect classes of already reviewed defects given by ADC of a review equipment. Since all defects are assigned the defect classes having the same definitions, more detailed analysis is possible in estimating the generation reasons of defects.
摘要翻译： 在自动缺陷分类方法中，未评估的缺陷被分配具有与经检查的缺陷相同的定义的缺陷类，以便有效地使用未被评估的缺陷的信息，未被评估的缺陷占据了晶片上的大多数缺陷。 未审查的缺陷被分配具有相同定义的缺陷类别，通过使用检查设备检测到的缺陷缺陷数据和审查设备的ADC给出的已经评估的缺陷的缺陷类别。 由于所有缺陷都分配有相同定义的缺陷类别，因此可以在估计缺陷的生成原因时进行更详细的分析。
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公开(公告)号：US06792367B2
公开(公告)日：2004-09-14
申请号：US10115815
申请日：2002-03-28
申请人： Naoki Hosoya , Yuuji Takagi , Hisae Shibuya , Kenji Obara
发明人： Naoki Hosoya , Yuuji Takagi , Hisae Shibuya , Kenji Obara
IPC分类号： G06F1900
CPC分类号： H01L22/20 , G06T7/0002 , G06T7/0004 , G06T7/41 , G06T2200/24 , G06T2207/30148
摘要： In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.
摘要翻译： 在晶片检查和采样系统中，晶片缺陷被检测并存储在数据存储器中作为缺陷数据。 还提供了信息，代表晶片上的缺陷簇。 进行基于统计学的缺陷采样，以获得一组采样缺陷。 随后对采样缺陷的详细检查和分析会产生额外的数据，有助于了解过程错误。
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公开(公告)号：US06792366B2
公开(公告)日：2004-09-14
申请号：US10015276
申请日：2001-12-11
申请人： Naoki Hosoya , Yuuji Takagi , Hisae Shibuya , Kenji Obara
发明人： Naoki Hosoya , Yuuji Takagi , Hisae Shibuya , Kenji Obara
IPC分类号： H01L2100
CPC分类号： H01L22/20 , G06T7/0002 , G06T7/0004 , G06T7/41 , G06T2200/24 , G06T2207/30148
摘要： In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.
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公开(公告)号：US06870169B2
公开(公告)日：2005-03-22
申请号：US10735575
申请日：2003-12-11
申请人： Kenji Obara , Yuji Takagi , Hisae Shibuya , Naoki Hosoya
发明人： Kenji Obara , Yuji Takagi , Hisae Shibuya , Naoki Hosoya
IPC分类号： G01N23/225 , G01Q30/02 , G01R31/26 , G06T7/00 , H01J37/147 , H01J37/252 , H01L21/66
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.
摘要翻译： 为了能够检测匹配缺陷位置的电子束的照射位置并且以高精度和高效率进行缺陷的组成分析，在本发明中，当选择组成分析目标缺陷并且 电子束被设置用于EDX分析，使用电子束在与包括缺陷的目标芯片附近的芯片上的该缺陷的位置相对应的缺陷对应位置处采集低分辨率的低分辨率参考图像，并且 接下来在目标芯片的缺陷位置获取相同低分辨率的低分辨率缺陷图像。 然后，通过比较这些低分辨率图像，获取缺陷位置，电子束被倾斜并照射在该缺陷位置以获得缺陷的组成谱。
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公开(公告)号：US20130119250A1
公开(公告)日：2013-05-16
申请号：US13697025
申请日：2011-04-05
申请人： Naoki Hosoya , Toshifumi Honda , Takashi Hiroi
发明人： Naoki Hosoya , Toshifumi Honda , Takashi Hiroi
CPC分类号： H01J37/28 , G06T7/001 , G06T7/136 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01L22/12
摘要： A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.
摘要翻译： 将待检查的图像与参考图像进行比较并将得到的差分值与使用缺陷确定的阈值进行缺陷检测相对照的常规图案检查在高灵敏度检查中是困难的。 因为缺陷仅在特定的电路图形部分中发生，所以在常规图案检查中出现虚假报告，而不是基于位置。 公开了一种缺陷检查方法及其装置，其通过事先获取GP图像，指定待检查地点和GUI上的GP图像的阈值图来进行图案检查，设置缺陷的识别参考，下一步 获取要检查的图像，将所述识别参考应用于要检查的图像，以及使用所述识别参考来识别所述缺陷，由此实现高度敏感的检查。
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6.发明授权公开(公告)号：US08121395B2
公开(公告)日：2012-02-21
申请号：US12393827
申请日：2009-02-26
申请人： Takashi Hiroi , Takeyuki Yoshida , Naoki Hosoya , Toshifumi Honda
发明人： Takashi Hiroi , Takeyuki Yoshida , Naoki Hosoya , Toshifumi Honda
IPC分类号： G06K9/00
CPC分类号： G01N21/95607 , G06T7/001 , G06T2207/10056 , G06T2207/30121 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A circuit-pattern inspection apparatus and related method provide a highly sensitive defect inspection of an area including the most circumferential portion of a memory mat of a semiconductor chip formed on a semiconductor wafer. In certain examples, an image of a circuit pattern of a die formed on the semiconductor wafer is acquired to judge whether or not the circuit pattern contains a defect.
摘要翻译： 电路图案检查装置及相关方法提供对形成在半导体晶片上的半导体芯片的存储垫的最周围部分的区域进行高灵敏度的缺陷检查。 在某些示例中，获取形成在半导体晶片上的芯片的电路图案的图像，以判断电路图案是否包含缺陷。
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公开(公告)号：US09390490B2
公开(公告)日：2016-07-12
申请号：US13520210
申请日：2010-12-22
申请人： Yuji Takagi , Minoru Harada , Ryo Nakagaki , Naoki Hosoya , Toshifumi Honda , Takehiro Hirai
发明人： Yuji Takagi , Minoru Harada , Ryo Nakagaki , Naoki Hosoya , Toshifumi Honda , Takehiro Hirai
CPC分类号： G06T7/001 , G06T2207/10061 , G06T2207/20081 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In performing a programmed-point inspection of a circuit pattern using a review SEM, stable inspection can be performed while suppressing the generation of a false report even when a variation in a circuit pattern to be inspected is large. SEM images that are obtained by sequentially imaging a predetermined circuit pattern using the review SEM are stored into a storage unit. Images that meet a set condition are selected from the stored SEM images, and averaged to create an average image (GP image). By performing pattern check by GP comparison using this GP image, an inspection can be performed while suppressing the generation of a false report even when a variation in the circuit patterns is large.
摘要翻译： 在使用复查SEM执行电路图案的编程点检查时，即使在要检查的电路图案的变化大的情况下，也可以抑制误报的产生而进行稳定的检查。 通过使用评价SEM将预定电路图案顺序成像获得的SEM图像存储在存储单元中。 从存储的SEM图像中选择满足设定条件的图像，并平均以创建平均图像（GP图像）。 通过使用该GP图像通过GP比较进行模式检查，即使当电路图案的变化大时也可以在抑制伪报告的产生的同时执行检查。
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公开(公告)号：US08853628B2
公开(公告)日：2014-10-07
申请号：US13697025
申请日：2011-04-05
申请人： Naoki Hosoya , Toshifumi Honda , Takashi Hiroi
发明人： Naoki Hosoya , Toshifumi Honda , Takashi Hiroi
CPC分类号： H01J37/28 , G06T7/001 , G06T7/136 , G06T2207/10061 , G06T2207/30148 , H01J37/222 , H01L22/12
摘要： A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.
摘要翻译： 将待检查的图像与参考图像进行比较并将得到的差分值与使用缺陷确定的阈值进行缺陷检测相对照的常规图案检查在高灵敏度检查中是困难的。 因为缺陷仅在特定的电路图形部分中发生，所以在常规图案检查中出现虚假报告，而不是基于位置。 公开了一种缺陷检查方法及其装置，其通过事先获取GP图像，指定待检查地点和GUI上的GP图像的阈值图来进行图案检查，设置缺陷的识别参考，下一步 获取要检查的图像，将所述识别参考应用于要检查的图像，以及使用所述识别参考来识别所述缺陷，由此实现高度敏感的检查。
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9.发明申请公开(公告)号：US20090226075A1
公开(公告)日：2009-09-10
申请号：US12393827
申请日：2009-02-26
申请人： Takashi Hiroi , Takeyuki Yoshida , Naoki Hosoya , Toshifumi Honda
发明人： Takashi Hiroi , Takeyuki Yoshida , Naoki Hosoya , Toshifumi Honda
IPC分类号： G06K9/00
CPC分类号： G01N21/95607 , G06T7/001 , G06T2207/10056 , G06T2207/30121 , G06T2207/30148 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein are a circuit-pattern inspection apparatus, and a circuit-pattern inspection method, which are capable of making a highly sensitive defect judgment of an area including the most circumferential portion of a memory mat of a semiconductor chip formed on a semiconductor wafer.In order to achieve the above object, the present invention includes the steps of: on the basis of the repeatability of a circuit pattern of a die formed on a semiconductor wafer, distributing data of an image to a plurality of image memories and storing the data therein; comparing the pieces of data of the image stored in the image memories with a combined reference image to generate a difference image, the combined reference image being combined by adding and averaging in a direction of the repeatability; judging that an area in which a difference value of the difference image is larger than a predetermined threshold value is a defect; and integrating and outputting a plurality of pieces of defect information, the defect information including image data judged to be defective and coordinates indicative of the defect.
摘要翻译： 这里公开了一种电路图案检查装置和电路图案检查方法，其能够对形成在半导体晶片上的半导体芯片的存储器垫的最周围部分的区域进行高灵敏度的缺陷判断。 为了实现上述目的，本发明包括以下步骤：基于在半导体晶片上形成的管芯的电路图案的重复性，将图像的数据分配给多个图像存储器并存储数据 其中 将存储在图像存储器中的图像的数据与组合的参考图像进行比较以生成差分图像，通过在重复性的方向上相加和求平均来组合参考图像; 判断差分图像的差值大于预定阈值的区域是缺陷; 并且整合并输出多条缺陷信息，所述缺陷信息包括判断为缺陷的图像数据和指示缺陷的坐标。
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10.发明授权公开(公告)号：US08509516B2
公开(公告)日：2013-08-13
申请号：US13056046
申请日：2009-07-13
申请人： Takashi Hiroi , Takeyuki Yoshida , Naoki Hosoya , Toshifumi Honda
发明人： Takashi Hiroi , Takeyuki Yoshida , Naoki Hosoya , Toshifumi Honda
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/95607 , G06T7/001 , G06T2207/10061 , G06T2207/30148 , H01L22/12
摘要： Provided is an examination technique to detect defects with high sensitivity at an outer-most repetitive portion of a memory mat of a semiconductor device and even in a peripheral circuit having no repetitiveness.A circuit pattern inspection apparatus comprises an image detection unit for acquiring an image of a circuit pattern composed of multiple die having a repetitive pattern, a defect judgment unit which composes, in respect of an acquired detected image, reference images by switching addition objectives depending on regions of repetitive pattern and the other regions and compares a composed reference image with the detected image to detect a defect, and a display unit for displaying the image of the detected defect.
摘要翻译： 提供了一种检测技术，用于在半导体器件的存储器垫的最外侧重复部分以及甚至在不具有重复性的外围电路中检测高灵敏度的缺陷。 电路图案检查装置包括：图像检测单元，用于获取由具有重复图案的多个模具组成的电路图案的图像;缺陷判断单元，其针对所获取的检测图像构成参考图像，其根据 重复图案的区域和其他区域，并且将组合的参考图像与检测到的图像进行比较以检测缺陷;以及显示单元，用于显示检测到的缺陷的图像。
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