公开(公告)号：US20060099348A1

公开(公告)日：2006-05-11

申请号：US11249390

申请日：2005-10-14

申请人： Masaki Narushima ,  Koumei Matsuzawa ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Masaki Narushima ,  Koumei Matsuzawa ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： C23C16/00

CPC分类号： C23C18/08

摘要： A deposition method for depositing on a substrate includes the step of: using a process medium made by adding a precursor to a medium in a supercritical state. The precursor is added to the medium in the supercritical state where the precursor is dissolved in an organic solvent.

摘要翻译： 用于沉积在衬底上的沉积方法包括以下步骤：使用通过在超临界状态下将前体添加到介质中制备的处理介质。 将前体加入超临界状态的介质中，其中前体溶于有机溶剂中。

公开(公告)号：US20060084266A1

公开(公告)日：2006-04-20

申请号：US11252795

申请日：2005-10-19

申请人： Masaki Narushima ,  Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Masaki Narushima ,  Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  C23C18/161 ,  C23C18/1678 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/40 ,  H01L21/28556 ,  H01L21/288

摘要： A film formation method of forming a film on a fine-pattern by supplying a processing medium that is in the supercritical state in which a precursor is dissolved on a target substrate is disclosed. The film formation method includes a first process of supplying the processing medium on the target substrate, the temperature of which is set at a first temperature that is lower than a film formation minimum temperature that is the lowest temperature at which film formation takes place, and a second process of forming the film on the target substrate by raising the temperature of the target substrate from the first temperature to a second temperature that is higher than the film formation minimum temperature.

摘要翻译： 公开了一种通过在目标基板上提供处于前体被溶解的超临界状态的处理介质，在微细图案上形成薄膜的成膜方法。 成膜方法包括：将目标基板上的处理介质供给到第一温度的第一工序，该第一工序的温度设定在低于成膜的最低温度的成膜最低温度的第一温度，以及 通过将目标基板的温度从第一温度升高到高于成膜最低温度的第二温度，在目标基板上形成膜的第二工序。

公开(公告)号：US20060121307A1

公开(公告)日：2006-06-08

申请号：US11250532

申请日：2005-10-17

申请人： Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh ,  Kenji Matsumoto

发明人： Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh ,  Kenji Matsumoto

IPC分类号： C23C16/00 ,  B32B15/00 ,  C23C14/32

CPC分类号： H01L21/288 ,  C23C18/04 ,  C23C18/08 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  Y10T428/12819 ,  Y10T428/12903

摘要： In a film deposition method which forms a Cu film on a Cu diffusion preventing film formed on a substrate, a contact film which is provided for adhering the Cu film to the Cu diffusion preventing film is formed on the Cu diffusion preventing film. A processing medium in which a precursor is dissolved in a medium of a supercritical state is supplied to the substrate so that the Cu film is formed on the contact film.

摘要翻译： 在形成在基板上的Cu扩散防止膜上形成Cu膜的成膜方法中，在Cu扩散防止膜上形成有将Cu膜附着在Cu扩散防止膜上的接触膜。 将前体溶解在超临界状态的介质中的处理介质供给到基板，使得在接触膜上形成Cu膜。

公开(公告)号：US07699945B2

公开(公告)日：2010-04-20

申请号：US11859490

申请日：2007-09-21

申请人： Naoki Yoshii ,  Koumei Matsuzawa ,  Yasuhiko Kojima

发明人： Naoki Yoshii ,  Koumei Matsuzawa ,  Yasuhiko Kojima

IPC分类号： C21D1/00 ,  H01L21/44

CPC分类号： H01L21/76846 ,  C23C16/0209 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76864

摘要： There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.

摘要翻译： 在基板的基材的表面上形成Cu膜之前，在基板上进行基板处理方法。 在基板处理方法中，准备要形成Cu膜的基板; 对基板进行特定的处理，使得基板的基材表面的结晶取向与Cu膜的晶格失配小。

公开(公告)号：US07456109B2

公开(公告)日：2008-11-25

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US20060124151A1

公开(公告)日：2006-06-15

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： B08B6/00

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US20090029047A1

公开(公告)日：2009-01-29

申请号：US11909160

申请日：2006-03-22

申请人： Naoki Yoshii ,  Koumei Matsuzawa ,  Yasuhiko Kojima

发明人： Naoki Yoshii ,  Koumei Matsuzawa ,  Yasuhiko Kojima

IPC分类号： C23C16/00

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/76838 ,  H01L21/76841

摘要： Disclosed is a film-forming method characterized by comprising a step for forming a primary Cu film on a substrate by using a divalent Cu source material, and another step for forming a secondary Cu film on the primary Cu film by using a monovalent Cu source material.

摘要翻译： 公开了一种成膜方法，其特征在于包括通过使用二价Cu源材料在基板上形成初级Cu膜的步骤，以及通过使用一价Cu源材料在初级Cu膜上形成二次Cu膜的另一步骤 。

公开(公告)号：US20080020934A1

公开(公告)日：2008-01-24

申请号：US11859490

申请日：2007-09-21

申请人： Naoki YOSHII ,  Koumei Matsuzawa ,  Yasuhiko Kojima

发明人： Naoki YOSHII ,  Koumei Matsuzawa ,  Yasuhiko Kojima

IPC分类号： H01L39/24

CPC分类号： H01L21/76846 ,  C23C16/0209 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76864

摘要： There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.

摘要翻译： 在基板的基材的表面上形成Cu膜之前，在基板上进行基板处理方法。 在基板处理方法中，准备要形成Cu膜的基板; 对基板进行特定的处理，使得基板的基材表面的结晶取向与Cu膜的晶格失配小。

公开(公告)号：US07063871B2

公开(公告)日：2006-06-20

申请号：US10617819

申请日：2003-07-14

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

IPC分类号： C23C16/16

CPC分类号： C23C16/16

摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

摘要翻译： 金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A） 以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。 进行步骤（A），使得金属膜不会在基板上实质上沉积。