摘要:
A film formation method of forming a film on a fine-pattern by supplying a processing medium that is in the supercritical state in which a precursor is dissolved on a target substrate is disclosed. The film formation method includes a first process of supplying the processing medium on the target substrate, the temperature of which is set at a first temperature that is lower than a film formation minimum temperature that is the lowest temperature at which film formation takes place, and a second process of forming the film on the target substrate by raising the temperature of the target substrate from the first temperature to a second temperature that is higher than the film formation minimum temperature.
摘要:
A deposition method for depositing on a substrate includes the step of: using a process medium made by adding a precursor to a medium in a supercritical state. The precursor is added to the medium in the supercritical state where the precursor is dissolved in an organic solvent.
摘要:
In a film deposition method which forms a Cu film on a Cu diffusion preventing film formed on a substrate, a contact film which is provided for adhering the Cu film to the Cu diffusion preventing film is formed on the Cu diffusion preventing film. A processing medium in which a precursor is dissolved in a medium of a supercritical state is supplied to the substrate so that the Cu film is formed on the contact film.
摘要:
A deposition apparatus for supplying a process medium including a medium in a supercritical state and a precursor to a processed substrate so that the processed substrate is deposited on, includes a process vessel, a support stand which is provided in the process vessel, is configured to support the processed substrate, and include a heating part, a medium supply part which is connected to the process vessel via a medium supply path and supplies the process medium to the process vessel, and a medium reflux path configured to reflux the process medium supplied to the process vessel to the medium supply part. The medium supply part includes a first temperature control part configured to control a temperature of the process medium.
摘要:
A high-pressure processing apparatus is used for performing a film formation process on a target object, while using a process fluid containing a high-pressure fluid and a film formation source material. The apparatus includes a pressure tight container defining a process field for accommodating the target object, and configured to withstand a pressure applied from the high-pressure fluid. The pressure tight container is made of a first material. A support member is disposed inside the pressure tight container to support the target object. A fluid supply system is configured to supply the process fluid onto the target object. A thermally shielding layer is disposed to cover a surface of the pressure tight container defining the process field. The thermally shielding layer is made of a second material having a thermal conductivity higher than that of the first material.
摘要:
A plate is placed near a substrate held by a substrate holding section. A treating liquid is ejected from a treating liquid ejecting section, thereby plating the substrate electrolessly. The treating liquid flows through the gap between the substrate and the plate. Therefore a flow of the treating liquid occurs on the substrate. As a result, a fresh treating liquid can be supplied onto the substrate. Thus, a plating film can be formed very uniformly on the substrate even if the amount of treating liquid is small.
摘要:
A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al-CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.
摘要:
A vacuum processing system includes a process chamber configured to accommodate a target object and perform a process thereon under a vacuum environment. The process chamber is provided with an exhaust system and a gas supply system. An ion generator configured to generate minus ions is disposed in a space outside the process chamber. The space is arranged to selectively communicate with the interior of the process chamber. A negative charge applicator is configured to form a negatively charged state of the target object within the process chamber.
摘要:
Locking claw engages a recording medium to be transferred, and a determination is made as to which of a plurality of predetermined points a current position of the locking member corresponds to. Current position of the recording medium can be determined indirectly on the basis of the thus-determined predetermined point corresponding to the current position of the locking member. If any recording medium is not properly settled in a predetermined rest position at power-ON, then the recording medium is automatically transferred to be settled in the predetermined rest position. Simplified detection of the position of the locking claw is made in absolute or quasi-absolute form, by a picker position detector unit that is provided in association with a rotating drive shaft of the locking member and employs a simply-constructed mechanism capable of generating detection pulses responsive to predetermined rotational angles of two shafts rotating at different rates. Each of the plurality of predetermined points defined for the locking claw can be identified in absolute or quasi-absolute form on the basis of a combination of patterns of the thus-generated pulses. Thus, in feed transfer of a recording medium, such as a DVD medium, the position of the medium can be detected in a simplified manner and can be automatically controlled to be properly settled in the predetermined position upon power-ON.
摘要:
A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al--CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.